| InxAl1-xN/AlN/GaN高电子迁移率晶体管的电学特性 |
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| 引用本文： | 毕杨,王晓亮,肖红领,王翠梅,杨翠柏,彭恩超,林德峰,冯春,姜丽娟.InxAl1-xN/AlN/GaN高电子迁移率晶体管的电学特性[J].半导体学报,2011,32(8):083003-5. |
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| 作者姓名： | 毕杨 王晓亮 肖红领 王翠梅 杨翠柏 彭恩超 林德峰 冯春 姜丽娟 |
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| 作者单位： | 中国科学院半导体研究所 |
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| 基金项目： | Project supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences（No.YYYJ-0701-02）; the National Natural Science Foundation of China（Nos.60890193,60906006）; the State Key Development Program for Basic Research of China（Nos. 2006CB604905,2010CB327503）; the Knowledge Innovation Program of the Chinese Academy of Sciences（Nos.ISCAS2008T01, ISCAS2009L01,ISCAS2009L02） |
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| 摘 要： | 通过自洽求解薛定谔和泊松方程研究了InxAl1-xN/AlN/GaN结构的电学特性。通过研究InxAl1-xN内部极化效应随铟组分的变化发现,当铟组分为0.41时,总的极化效应为零。通过计算发现,二维电子气密度随着铟组分的增加而减小。对于AlN的厚度存在一个临界值：当AlN的厚度小于临界值时,二维电子气密度随着InxAl1-xN厚度的增加而增加；然而,当AlN的厚度大于临界值时,二维电子气密度随着InxAl1-xN厚度的增加而减少。对于晶格匹配的In0.18Al0.82N/AlN/GaN结构,AlN的厚度临界值为2.8nm。通过计算还发现,AlN厚度临界值随着铟组分的增加而减少。
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| 关 键 词： | 高电子迁移率 氮化镓 氮化铝 管结构 电气性能 临界厚度 模拟 晶体 |
| 收稿时间： | 2/28/2011 8:25:24 PM |
Simulation of electrical properties of InxAl1-xN/AlN/GaN high electron mobility transistor structure |
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| Bi Yang,Wang Xiaoliang,Xiao Hongling,Wang Cuimei,Yang Cuibai,Peng Enchao,Lin Defeng,Feng Chun and Jiang Lijuan.Simulation of electrical properties of InxAl1-xN/AlN/GaN high electron mobility transistor structure[J].Chinese Journal of Semiconductors,2011,32(8):083003-5. |
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| Authors: | Bi Yang Wang Xiaoliang Xiao Hongling Wang Cuimei Yang Cuibai Peng Enchao Lin Defeng Feng Chun and Jiang Lijuan |
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| Affiliation: | Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Electrical properties of InxAl1-xN/AlN/GaN structure are investigated by solving coupled Schrödinger and Poisson equations self-consistently. The variations in internal polarizations in InxAl1-xN with indium contents are studied and the total polarization is zero when the indium content is 0.41. Our calculations show that the two-dimensional electron gas (2DEG) sheet density will decrease with increasing indium content. There is a critical thickness for AlN. The 2DEG sheet density will increase with InxAl1-xN thickness when the AlN thickness is less than the critical value. However, once the AlN thickness becomes greater than the critical value, the 2DEG sheet density will decrease with increasing barrier thickness. The critical value of AlN is 2.8 nm for the lattice-matched In0.18Al0.82N/AlN/GaN structure. Our calculations also show that the critical value decreases with increasing indium content. |
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| Keywords: | GaN InAlN HEMT 2DEG polarization |
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