基于软件总线与CORBA技术的EPON网络管理系统

本文在提出EPON网管系统的体系结构和功能需求的基础上,使用软件总线和CORBA(公共对象请求代理体系结构)技术,设计了基于软件总线和CORBA北向接口的EPON网管系统软件结构.本文讨论了EPON网管系统的配置管理模块、故障管理模块、拓扑管理模块、性能管理模块、用户管理模块和业务管理模块的设计,并给出了此EPON网管系统的实现情况.     

EPON网管资源管理子系统的设计与实现

以太网无源光网络(EPON)已成为应用最广的宽带接入技术之一,为其配备强大的网管系统是十分必要的.文章设计了EPON网管资源管理子系统,以实现对网络资源的管理和状态的实时监控.首先介绍了EPON网管系统的总体架构,随后重点阐述了资源管理子系统的设计方案,最后分别在网管客户端、服务器端和代理侧予以实现.     

基于SNMP的EPON网管系统的设计与实现

以太无源光网络(EPON)即将成为宽带接入的最有效的通信方法,为EPON系统提供一个稳定、有效的网络管理系统显得尤为重要。简单网络管理协议(SNMP)是当今应用最广泛的网络管理协议。本文分析了基于SNMP的EPON网管结构,按配置管理、性能管理、故障管理、安全管理等功能设计了EPON网管系统,并分别在管理站和代理站上予以实现。     

EPON网管系统的设计与实现

介绍了一种EPON网管系统的设计与实现,该系统能使EPON系统稳定高效地运行.系统采用SNMP与OAM协议,包括了配置、性能、故障、安全和计费等功能,提供基于Java的GUI操作管理环境,便于远程管理以及移植于网页管理.     

基于SNMP的EPON网管系统设计及实现

以太网无源光网络(EPON)是宽带接入的最有效方式之一,为其建立一套稳定、有效的EPON网络管理系统显得尤为重要.文章简要论述了EPON的结构,提出了一种基于简单网络管理协议(SNMP)的EPON网络管理系统设计方案.按配置管理、性能管理、故障管理和安全管理等功能,设计了EPON网管系统,提供了基于Web server的GUI操作管理环境,并分别在管理站和代理站上予以软件实现.     

航电综合系统中飞机显示控制系统的仿真与实现

为了实现对飞机显示控制系统的仿真,提出采用1553B总线、以太网两种接口的显示控制系统设计的方法,采用总线联网技术构建的显示控制系统,可以达到高度的资源综合和信息共享。首先,分析系统的内容和功能,从系统管理和信息交互的角度,对显示控制系统仿真进行详细介绍。然后,运用结构化、模块化、标准化的思想,建立了系统总体模型,并对其中的初始化模块、配置模块、总线通讯模块、控制模块、显示模块和数据处理模块进行了详细建模。针对总线通信中的总线负载与消息延迟时间的矛盾问题,提出了更新机制下动态完整消息分配法。最后进行了系统仿真,仿真结果表明仿真真实有效,方法可行。     

基于EPON＋EoC的NGB接入网统一网管系统研究

本文介绍了NGB接入网的技术结构,分析了当前EPON、EoC和HFC网管系统,根据NGB网络的总体管理要求,分析研究了NGB接入网统一网管的意义和要求,最后介绍了NGB上海示范接入网统一网管的建设方案。     

EPON网络管理系统中拓扑管理的设计与实现

阐述了拓扑管理的重要性,为了能够更加方便以太无源光网络(EPON)系统的管理,提出了一种基于B/S结构的EPON网管的拓扑管理设计方案.测试结果表明,能够快速、准确地分层显示网络拓扑图,具有Trap主动上报的功能,实现了拓扑管理的功能.     

一种带EOC网管功能的新型ONU模块设计

因为传统的ONU和EOC网管单元都是分开设计的,硬件上采用两套不同的CPU管理芯片,存在网管成本高的问题,所以该文介绍了一种集成EOC网管功能的ONU模块。该ONU协议芯片采用高通公司的OPL-06750,它是一款内部集成32位MIPS24KEcTM内核的微处理器,结合高通公司的AR8327千兆交换芯片可以构建传统千兆ONU模块,同时通过在软件上采用ONU、EOC网管双进程设计的方法可以统一地管理ONU和EOC网络设备,省去了EOC网管单元CPU。该模块具有成本低廉、性能稳定、配置维护灵活的特点,适用于广电运营商的EPON+EOC双向网改造。该文给出了ONU模块的硬件组成框图和ONU、EOC设备拓扑关联的软件流程。     

NGB接入网设备集成平台

设计了将光接收机、EPON的ONU、窄带EoC、宽带EoC、电源集成在一起,并统一进行SNMP网管的四合一接入网设备。详细介绍了其设备集成平台组成、平台各工作模块频谱带宽、统一网络管理方式设计以及接入网设备统一网管系统,从而实现了广电行业模块化接入网设备的统一标准和规范。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.