一种基于非线性域值小波包的超声图像闪斑抑制方法

在B超三维成像中,采用了一种新的基于非线性域值小波包的闪斑（Speckle)噪声抑制方法来提高成像质量。首先将一幅原始图像经过预滤波分解为高频噪声图像和低频主体图像两部分,然后分别经过多分辨率小波包处理,得到一组小波包域的系统。该系统采用一种软阈值滤波算法处理,去除掉其中的噪声并保留下各自的有用信息。两组分别去噪后的小波包系数经反变换回到时域并相加,得到消除了噪声的图像。该算法的性能在计算机仿真图像上进行了验证。采用该方法处理了一组水槽中的碗状物体的B超图像,并进行了三维体视化重构。实验表明,这种方法可以有效地抑制超声闪斑噪声并在重构中保留对象的细节特征。     

双能图像融合算法研究

为解决X射线单能量成像的图像像素点缺失、图像分辨率较低等问题,且为更好地保护图像的细节信息,给出了结合双能和小波技术的图像融合算法.对原始采集的图像进行小波分解,等价于用一组高、低通滤波器进行滤波.通过高能量和低能量下的小波分解,用基于邻域像素的关联性和区域方差提取低频分量.用Sobel算子检测局部细节信息,将梯度最大值作为算子检测的图像边缘输出,从而提取高频分量.采用小波重构算法进行逆变换,形成新的融合图像并进行定量分析.结果表明,这种双能融合方法可以很好地解决X射线单能量成像的局限性,较好地保护图像的细节信息,增强图像成像质量.     

一种基于数学形态学与小波域增强的滤波算法

为了有效滤除图像高斯噪声,将数学形态学与小波域增强相结合,提出了一种高斯噪声新型滤波算法.该算法首先将噪声图像进行二维小波分解,得到低频和高频子图像;然后保留低频子图像不变,对各高频子图像根据其噪声分布特点分别设计出多角度、多结构逐级形态学滤波器进行滤波处理,并进行小波分解系数重构;最后对经过形态学滤波后的图像进行2层小波分解,通过设计出一种新型小波增强函数对不同幅值的小波系数进行不同程度的收缩处理,在此基础上进行分解系数重构.将自适应中值滤波与数学形态学滤波与本文算法进行比较,实验证明本文滤波算法其去噪效果优于前两种算法.     

小波分解和重构的光学可变图像融合研究

针对传统光学可变图像融合方法存在的融合效果差、噪声干扰严重等问题,提出小波分解和重构的光学可变图像融合方法。分析光学可变图像在不同区域的融合原理,获取光学可变图像的特征;采用小波变化的方法,对光学可变图像进行多尺度分解,提取不同频率的小波系数;采用小波阈值降噪方式,对光学可变图像进行降噪处理;通过融合准则选取融合子图像数据,利用小波逆变化融合图像,实现多幅光学可变图像的融合。实验结果表明,采用所提方法进行光学可变图像融合后,获得的光学可变图像边缘更加清晰,且图像信噪比更高。     

基于多尺度几何分析的SAR图像融合

在穿墙雷达成像技术中,建筑布局成像对确定墙后人体目标的空间相对位置以及多径虚假目标的提取有重要意义。目前的建筑布局成像一般采用多通道多视角图像融合方法,对此提出一种基于多尺度分析,即基于小波分解下的多通道多视角图像融合算法。该算法分为两个阶段,第一阶段涉及到单视角下的多通道图像融合,该阶段的融合目的主要是为增强图像细节信息和提高图像清晰度。因此对其小波分解后的图像高频分量采用平均梯度增强的加权融合算法,低频分量采用平均加权融合,后经小波反变换后形成多幅单视角图像;第二阶段涉及到多视角融合,该阶段的融合目的主要是为了增强图像的对比度,并且考虑到此阶段不同视角下图像经小波分解后的三个高频分量对比度各不相同,因此高频分量采用对比度增强的加权融合算法,低频分量仍采用平均加权融合,后将融合后的频率分量经小波反变换,便可得到一幅完整融合图像。仿真结果表明,提出的基于小波分解下的多通道多视角图像融合算法不论在图像视觉效果的改善和信噪比的提高等方面都有较大的作用。     

基于小波融合技术的医学图像增强方法

为了改善医学图像质量,在分析小波变换原理的基础上,根据医学图像的成像特征,提出了一种基于小波融合技术的医学图像增强方法.首先,对待增强图像进行多层小波变换处理,获取各个频率的小波系数.然后分别对各频率系数进行相应的处理后,进行小波重构并进行对比度增强处理,获得增强图像1;同时对待增强图像进行对数变换和对比度拉伸处理,获得增强图像2.最后将增强图像1和增强图像2变换至小波域进行图像融合处理,以获得最终的增强图像.结果表明:本文提出的增强方法具有明显的增强效果.该增强方法能有效提高医学图像的对比度,增强边缘细节信息,突出病灶点的位置,达到较好的增强效果,为医疗工作者观察病症提供更加清晰准确的依据.     

基于多尺度边缘表示的偏振图像二次融合算法

针对传统成像技术探测信息量少以及传统图像融合方法计算量大,不能凸显边缘轮廓的问题,提出一种基于多尺度边缘表示的偏振图像二次融合方法。首先,对同时偏振成像系统获取的4个偏振角度图像进行多尺度边缘去噪、配准预处理。然后一次融合,即将预处理后的4个偏振角度图像进行二进小波分解,在不同尺度上对低频、高频系数进行特定组合,计算得到Stokes向量［I Q U V］T,线偏振度(DOLP)和偏振相位角(AOP)等偏振信息;二次融合,即是根据边缘相关性原则融合偏振强度图像和线偏振度图像经小波分解后的高频系数,低频用区域能量的方法。最后,采用交替投影迭代法重构融合图像的低频、高频系数,得到重构图像。实验结果表明,本文算法的融合性能优于传统方法。以小波变换法为参考,平均值提高65.48%,标准差提高95.98%,平均梯度是传统小波的6.45倍,边缘强度是小波变换的5.54倍。本算法提高了运算速度,结合了强度图像亮度信息和线偏振度图像反映不同物体性质的特点,突出了目标轮廓细节,能很好地识别隐藏、伪装的目标。     

基于特征级数据融合的遥感图像重构模式研究

基于图像特征级数据融合的遥感图像重构是在突出目标地物的空间结构和纹理特征情况下的信息融合.本文在数字图像小波多分辨率分析理论基础上,采用小波变换方法对高分辨遥感图像的目标地物边缘进行信息增强,然后与多光谱遥感图像进行特征信息融合.在融合过程中,首先对多光谱图像中的R、G、B三个波段的图像进行小波分解,得到相应的低频图像,然后对特征增强后的高分辨率图像进行小波分解,再将分解后的高频图像分别与低频图像进行融合,最后经RGB合成为彩色图像.该方法既改善了图像的清晰度和分辨率,同时也保留了原图像的光谱信息.本文最后通过融合实验验证了上述结论.     

一种基于提升小波的多传感器图像融合

提出了一种基于提升方案的五株形小波的多传感器图像融合方法,即在提升五株形小波多尺度分解的基础上,对每一幅图像进行多尺度分解,按照不同的融合规则和融合算子去构造融合图像对应的各小波系数,再通过逆变换重构融合后的图像.该方法被成功地用于多聚焦图像的融合处理.试验结果表明该融合方法十分有效,获得的融合图像更符合人眼的视觉特性、更有利于进行目标监视和侦察.     

基于小波变换的多规则图像融合方法

针对红外和可见光图像各自特征,提出了基于小波变换多分辨率的不同规则图像融合方法.首先对原图像进行多级小波分解,产生多频带小波系数,利用像素的局部区域方差、平均梯度及掩膜滤波等方法对不同频带小波系数计算融合权重,最后将小波融合系数逆变换实现图像的融合处理.实验结果表明,融合图像特征显著,易于观察.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.