雷帕霉素对人脐静脉内皮细胞增殖的影响

目的：观察雷帕霉素对人脐静脉内皮细胞增殖的影响,探讨其可能的抑制新生血管的作用机制。方法：采用四唑盐比色试验（MTT）法检测不同浓度（0.1ng/ml,1ng/ml,10ng/ml,20ng/ml）的雷帕霉素对血管内皮生长因子（Vascular endothelial growth factor,VEGF）诱导的人脐静脉内皮细胞（human umbilical vein endothelial cell,HUVEC）增殖的抑制作用。结果：不同浓度的雷帕霉素均能抑制由VEGF诱导的HUVEC增殖。结论：雷帕霉素能抑制HUVEC的增殖,且呈剂量依赖。雷帕霉素通过抑制血管内皮细胞的增殖来抑制新生血管的形成。     

Salubrinal保护心肌细胞内质网应激凋亡的实验研究

目的探讨Salubrinal对衣霉素诱导的乳鼠原代心肌细胞凋亡的保护作用及机制。方法采用消化贴壁法获得乳鼠原代心肌细胞,分别给与不同浓度的Salubrinal(10μmol、20μmol、40μmol)预处理,30min后加入TM(5μg/ml),继续培养24h后通过流式细胞和TUNEL检测方法对乳鼠心肌细胞凋亡进行检测;Western印迹法检测凋亡过程中Caspase-12蛋白酶的表达变化。结果经Salubrinal预处理的细胞同单独使用衣霉素相比,细胞凋亡率和细胞凋亡指数均显著下降;Caspase-12表达明显减少。结论Salubrinal对衣霉素诱导的乳鼠原代心肌细胞凋亡具有保护作用,其机制可能是通过抑制内质网应激凋亡通路。     

原代大鼠肾小球系膜细胞最佳电转染条件的探索和验证

目的探索并验证原代大鼠肾小球系膜细胞最佳电转染条件。方法设立不同的电压与电容组合、电击前孵育温度、质粒DNA浓度等电转染条件,将绿色荧光蛋白表达质粒pEGFP-C1导入原代大鼠肾小球系膜细胞。24h后比较各组细胞存活率和绿色荧光蛋白表达情况,确立最佳电转染条件。再以此条件电转染质粒pcDNA3.1和pcDNA3.1-FHL2,48h后收取两组细胞RNA和蛋白。应用RT-PCR和Western印迹检测目的基因FHL2的核酸和蛋白表达,验证电转染效果。结果在电击前室温孵育,40μg质粒,340V电压、550μF电容的最佳电转染条件下,原代大鼠肾小球系膜细胞的电转染效率可达40%以上,细胞存活率在50%左右。转染FHL2质粒组较对照组检测FHL2的核酸和蛋白表达水平明显升高(P<0.05)。结论适当的电转染条件可以有效转染原代大鼠肾小球系膜细胞。     

汉防己甲素对兔眼角膜基质细胞增殖和凋亡作用的比较研究

目的：探讨汉防己甲素（Tet）对离体兔眼角膜基质细胞抑制增殖作用,及其对增殖率和凋亡率的作用程度比较。方法：选用原代及传代兔角膜基质细胞,实验组加入含不同浓度Tet的培养液,对照组加入含等量PBS的培养液。通过免疫细胞化学技术了解细胞的PCNA表达来枪测细胞增殖情况,计算增殖率并测定变化;流式细胞仪（FCM）测定细胞周期和凋亡率的变化。结果：Tet质量浓度为2μg／ml,3μg/ml,4μg／ml时,作用48h,随着Tet浓度的增大,PCNA阳性细胞数明显减少,角膜基质细胞的增殖率呈递减趋势,存在剂量一效应关系（P〈0．05）;FCM结果显示,随着Tet的浓度增大,实验组G0／G1期细胞增加,细胞删期阻滞在G1期,见细胞凋亡峰,凋亡率也随浓度增大而升高（P〈0．05）;Tet对增殖率影响的曲线斜率绝对值明显大于对调亡率作用的斜率绝对值,结论：Tet对角膜基质细胞的PCNA的表达具有明显抑制作用,随Tet浓度增大,角膜基质细胞的增殖率下降,Tet通过将细胞阻滞在G1期而发挥其抗增殖作用,且存在剂量效应关系;Tet诱导细胞凋亡,且也存在剂量效应关系,随浓度增大,凋亡率增加;在2μg/ml．3μm/ml,4μg／ml的浓度内,Tet对角膜基质细胞同时具有抑制增殖和诱导凋亡作用,但以抑制增殖作用为主.     

铜蒸气激光照射对血管平滑肌细胞凋亡的诱导作用及对其增殖的影响

目的：研究510.6nm铜蒸气激光照射对体外培养的血管平滑肌细胞（VSMC）凋亡的诱导作用，以及对增殖细胞核抗原（PCNA）表达的影响，探讨铜蒸气激光照射在经皮冠状动脉成形术（PTCA）后再狭窄（RS）的防治作用。方法：贴块法培养兔VSMC，510.6nm铜蒸气激光照射后透射电镜观察凋亡细胞形态学改变，TUNEL法计数凋亡细胞，免疫组化染色法计数照光对PCNA阳性表达率的影响。结果：激光照射后，VSMC凋亡率较未照光组增加12.8倍，而PCNA表达阳性率降低27．9％倍；电镜下观察细胞呈典型的凋亡形态学改变。结论：铜蒸气激光照射可以诱导VSMC凋亡，而且抑制其增殖，在RS的防治中具有一定的作用。     

姜黄素诱导肺癌A549细胞凋亡

目的：研究姜黄素对A549细胞凋亡的诱导作用,并探讨其可能的分子机制。方法：姜黄素处理A549细胞后,MTT法于不同时间点检测A549细胞的增殖情况;姜黄素处理A549细胞48h后,流式细胞术（Flow CytoMetry,FCM）检测A549细胞的凋亡率;30μmol／L姜黄素处理A549细胞24h、48h、72h后,RT—PCR、Western—Blot检测A549细胞中P53、Bcl2、Bax和cagpase-3基因的表达水平。结果：姜黄素对肺癌A549细胞增殖的抑制作用具有显著的浓度-时间依赖关系,30μmol／L姜黄素可诱导A549细胞凋亡。30μmoL／L姜黄素作用A549细胞24h即可引起A549细胞中P53、Bax和Caspase-3表达水平的上调,48h后可引起Bcl2表达水平的下调,诱导A549细胞凋亡。结论：30μmol／L姜黄素可诱导A549细胞凋亡,其机制可能与促进P53、Bax和Caspase-3基因的表达,抑制Bcl2基因的表达有关。     

槲皮素对BGC823胃癌细胞p53、Bcl-2/Bax、PCNA表达影响与抑癌作用研究

目的：观察槲皮素对胃癌细胞BGC823生长及p53、Bcl-2／Bax、PCNA的影响。方法：以台盼蓝拒染法计数胃癌细胞的生长抑制率，透射电镜从形态变化上了解凋亡的发生，流式细胞术检测细胞周期变化，免疫细胞化学检测p53、Bcl-2／Bax、PCNA蛋白的表达。结果：台盼蓝拒染法计数显示槲皮素抑制BGC823细胞增殖的作用明显，且呈浓度和时间依赖性，槲皮素处理48h后的Ic50为28．12μm。形态学检测显示出细胞凋亡的特征变化，流式细胞仪检测表明经10—20μm／L的槲皮素处理，BGC823细胞周期阻滞于S期，药物浓度呈正相关。细胞呈现核固缩、染色质边集、凋亡小体形成等典型凋亡表现。经槲皮素处理后BGC823细胞株bax蛋白表达明显增加，bcl-2、PCNA、p53蛋白表达降低。结论：槲皮素能抑制胃癌细胞的生长，呈时间剂量依赖性，能诱导BGC823发生凋亡，使细胞周期阻滞于S期，抑制增生与诱导凋亡的机制可能与下调p53、PCNA的表达，降低bcl-2／Bax比值有关。     

电穿孔法转染原代培养的瘢痕疙瘩成纤维细胞的条件优化

目的:通过电穿孔法将增强型绿色荧光蛋白基因真核表达载体pEGFP-N1质粒导入原代培养的人瘢痕疙瘩成纤维细胞,探讨影响外源基因电转染效率的参数,如电压、脉冲长度、DNA剂量以及转染后时间长度等.方法:在大肠杆菌中扩增pEGFP-N1质粒,选择不同的电压梯度、脉冲长度及DNA剂量,采用电转仪将pEGFP-N1质粒导入原代培养的人瘢痕疙瘩成纤维细胞,用荧光显微镜观察转染后不同时间pEGFP-N1瞬时表达情况及细胞存活情况,流式细胞仪检测其转染效率.结果:在电压为250v、脉冲数1、脉冲长度15μs、DNA质粒6μg时,电穿孔法将pEGFP-N1质粒导入瘢痕疙瘩成纤维细胞转染率最高,细胞存活率最高,转染后24h明显表达,48h后表达最强.结论:在适当的电压、脉冲长度下,选择适当的DNA用量,在转染后一定的时间范围内,电穿孔法转染原代培养的人瘢痕疙瘩成纤维细胞可使目的基因获得较高的转染率,且细胞死亡最少.电穿孔法是研究原代培养的人瘢痕疙瘩成纤维细胞生物学行为较为理想的转染方法.     

增强型绿色荧光蛋白基因转染对原代培养的人成纤维细胞细胞周期的影响

目的:观察转染增强型绿色荧光蛋白(EGFP)基因后对原代培养的人瘢痕疙瘩成纤维细胞细胞周期的变化,建立原代培养的人瘢痕疙瘩成纤维细胞的示踪方法.方法:在大肠杆菌中扩增pEGFP-N1质粒,采用电转仪将pEGFP-N1质粒转入原代培养的人瘢痕疙瘩成纤维细胞,应用荧光显微镜观察其转染过程及瞬时表达情况,流式细胞仪检测其转染效率和细胞周期的变化.结果:增强型绿色荧光蛋白基因在转染24h后得到了明显表达,48h后流式细胞仪检测其表达率为32.6%,细胞周期无明显的变化,且未影响成纤维细胞的贴壁过程.结论:经pEGFP-N1质粒转染的原代培养的人瘢痕疙瘩成纤维细胞仍能在体外存活,对成纤维细胞的生长没有明显的影响.pEGFP-N1是转染原代培养的人成纤维细胞较为理想的瞬时表达载体,是研究成纤维细胞生物学行为的良好示踪剂.     

IL-6干预对3T3-L1脂肪细胞SAA表达的影响

目的观察IL-6干预对3T3-L1脂肪细胞血清淀粉样蛋白A(SAA)表达的影响。方法用不同浓度IL-6(0.1ng/ml,1ng/ml,10ng/ml)处理3T3-L1脂肪细胞24h、10ng/mlIL-6处理不同时间(6h、12h、24h),用ELISA技术检测各组SAA的表达。结果TNF-a能显著促进3T3-L1脂肪细胞SAA的表达,并呈剂量和时间依赖方式。结论IL-6可以通过促进3T3-L1脂肪细胞SAA的表达和分泌,参与胰岛素抵抗及血管并发症的形成。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.