多功能半导体激光器驱动电源的研制

研制了一种单片机控制的连续半导体激光器(LD)驱动电源。LD可以工作于自动电流控制(ACC)模式、自动功率控制(APC)模式和自动电压控制(AVC)模式。LD的电流可实现0～2A连续可调,满量程精度在±0.1%以内;对LD的温度可以实现精确的控制,采用了比例积分(PI)控制技术,并结合积分分离的思想,使温度控制快速而有效,控制精度为±0.1℃;采取了软启动控制、短路开关和限幅保护的措施,有效地保证了LD的安全。实验表明:该电源具有智能化程度高、抗干扰能力强、稳定度高和使用方便的优点。     

基于FPGA技术的半导体激光器脉冲驱动电源的设计

针对半导体激光器(LD)脉冲驱动工作的需要,提出了一种新型的基于FPGA技术的LD脉冲驱动电源的设计方法.结合FPGA技术,利用日立SH系列单片机HD64F7045为控制核心,实现高稳定度的激光器脉冲驱动控制.在LD驱动模块中,引入负反馈控制技术,实现了LD的自动电流控制(ACC)和自动功率控制(APC);同时,采取了慢启动电路、短路开关和限幅保护等措施,有效地保证了LD脉冲工作的安全.该电源已经成功地应用于某脉冲光源系统.     

基于单片机的半导体激光器应用控制技术

针对半导体激光器(LD)应用领域十分广泛的特点,提出了一种新型LD功率(P)-电流(Ⅰ)-电压(Ⅴ)的自动测试方法.该方案采用华邦51系列单片机(SCM)W78E58BP作为控制核心,实现了高稳定度的LD连续及脉冲驱动、恒流控制及功率、电压采集.LD控制单元中,应用负反馈技术实现注入电流Ⅰf、驱动电压Ⅴf和光功率Po的高稳定控制,电流控制精度为±0.1%;单片机控制电信号的放大、保持和采集,模拟、数字相结合,提高了信号处理的精度.最后,给出了通过RS-232接口对LD进行PIV测试的曲线及相关参数的测试结果,并给出了误差分析.该测试方法已得到广泛应用.     

新型半导体激光器驱动电源

设计了一种经济实用的半导体激光器驱动电源,具有自动电流控制(ACC)和自动功率控制(APC)两种控制方式.ACC控制利用电流采样反馈,从而使电流漂移最小、LD输出稳定性最大.APC 控制利用内接受光二极管,将其监测电流通过反馈网络与设定值比较,形成闭环负反馈控制.设计中采用纯积分环节作为驱动调节器,避免了系统超调和振荡,又由于积分调节器具有滞后特性,利用此特点,实现了激光器的慢启动.温控电路采用比例积分调节器,通过半导体制冷器,使激光器工作在恒温状态下,同时引入积分分离思想,进而抑制积分饱和.实验结果表明,该系统驱动电流的稳定度为满量程的±0.05%,温度稳定度为±0.1℃.     

融入FPGA技术的半导体激光器功率-电流-电压测试系统

提出了一种新型的半导体激光器(LD)功率(P) 电流(I) 电压(V)自动测试系统。该方案融入FPGA技术,采用日立SH系列HD64F7045单片机为控制核心,实现了高稳定度的 LD驱动和温度控制。LD控制单元中,应用负反馈技术实现注入电流 IF、驱动电压 VF 和光功率 Po 的高稳定控制;采取了软启动控制、短路开关和限幅保护的措施,有效地保证了LD的安全。LD温度控制单元中,采用了比例积分(PI)控制技术并结合积分分离的思想,使温度控制快速而有效。实验表明,注入电流的稳定度达到10-4量级,温度稳定度优于±0.01 ℃。最后,给出了通过GPIB接口对LD进行P- I- V曲线及相关参数的测试结果。     

大功率光纤激光器泵浦源LD驱动电源设计

根据大功率、低噪声半导体泵浦光纤激光器对于激光电源的要求,通过LD工作原理和输出特性分析,设计一种以ADuc842高速单片机为主控芯片的LD驱动控制电路。设计采用自动电流控制(ACC)和自动温度控制(ATC)的方式,实现LD的恒流源驱动和恒温控制。设计还引用了双限流电路、浪涌吸收电路及慢启动电路等一系列保护电路,提高了LD的抗冲击能力和工作稳定性。实验结果表明,电流输出稳定度优于0.5%,温度稳定度达到±0.1℃。     

大功率半导体激光器调制特性的实验研究

设计了一种带有调制输入接口及恒电流、恒功率、恒温控制的光源系统,着重对其低频调制特性进行了实验研究.通过引入负反馈及自动温度控制技术,从外部电路角度改善了半导体激光器的调制输出特性,有效抑制了驰豫振荡,优化了激光二极管(LD)的调制输出参数.     

一种具有750mA输出电流，双模式PWM/PFM控制的高效率直流-直流降压转换器

提出了一种输m电流可达750mA,脉宽调制(PwM)和变频调制(PFM)双模式控制的,高效率、高稳定性直流.直流降压转换器.该转换器在负载电流大于80mA时,采用开关频率为lMHz的PwM工作模式;在负载电流小于80mA时,采用开天频率减小和静态电流降低的PFM工作模式,实现了在整个负载电流变化范围(0.02～750mA)内,转换器均保持高效率.而且采用一种快速响应的电压模式控制结构,达到了优异的线性和负载调整特性.芯片采用CSMC公司0.5μm CMOS 2P3M混合信号上艺物理实现.测试结果表明,该电路可根据负载的变化在PWM和PFM模式下自动切换.最大转换效率达96.5%;当负载电流为0.02mA时,转换效率大于55%.该芯片特别适合电池供电的移动系统使用.     

一种具有750mA输出电流,双模式PWM/PFM控制的高效率直流一直流降压转换器

提出了一种输m电流可达750mA,脉宽调制(PwM)和变频调制(PFM)双模式控制的,高效率、高稳定性直流.直流降压转换器.该转换器在负载电流大于80mA时,采用开关频率为lMHz的PwM工作模式;在负载电流小于80mA时,采用开天频率减小和静态电流降低的PFM工作模式,实现了在整个负载电流变化范围(0.02～750mA)内,转换器均保持高效率.而且采用一种快速响应的电压模式控制结构,达到了优异的线性和负载调整特性.芯片采用CSMC公司0.5μm CMOS 2P3M混合信号上艺物理实现.测试结果表明,该电路可根据负载的变化在PWM和PFM模式下自动切换.最大转换效率达96.5%;当负载电流为0.02mA时,转换效率大于55%.该芯片特别适合电池供电的移动系统使用.     

小功率半导体激光器的驱动方法设计

在光散射测量系统中,半导体激光器(LD)的工作稳定性直接影响检验结果。为了得到稳定的光功率输出,设计了包含自动温度控制与自动电流控制的LD驱动系统。应用0.5 mA恒流源对PT100温度传感器供电,将LD工作温度转化为电压信号,经前置放大电路与电压比较电路处理后,通过PI控制半导体制冷实现恒温控制系统;根据闭环负反馈原理设计自动电流控制系统以及相应的辅助电路,能为LD提供稳定的、连续可调的驱动电流。经实验表明,系统在驱动额定功率为20 mW下工作时,可保证激光器输出功率稳定性优于0.2%。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.