基于CAN总线的火灾智能监控系统设计

基于CAN总线和智能控制技术,设计了一种基于CAN总线的火灾实时监控报警系统。本设计采用主从式结构。主节点具有液晶显示功能;从节点负责温度、气体浓度采集并具有联动灭火功能。本系统与传统火灾监控系统相比具有突出的可靠性、实时性和灵活性,具有较高的应用价值。     

基于CAN总线的潜水电机智能监控系统设计

针对潜水电机工作环境恶劣、影响参数多、故障率高等问题,本文设计了一种基于CAN现场总线的潜水电机群分布式智能监控系统。监控节点完成潜水电机的智能控制和故障保护,并通过CAN总线与监控主机进行通信,形成分布式监控网络,简化了系统结构,实现多电机的分散监控和集中管理功能。     

基于CAN-Ethernet的煤炭产量监测系统的设计

为了推进当前矿井煤炭生产信息化的发展进程,解决煤矿井下高实时性的生产数据上传不及时以及难以实现共享的问题,提出了一种基于CAN总线与以太网技术的煤炭产量监测系统的设计方法。将CAN总线构建的现场网络与由以太网构建的企业管理网络互联以实现煤矿生产信息实时共享。综合阐述了系统的整体架构,重点介绍了基于CAN总线的智能节点以及CAN-Ethernet网关的软硬件设计方法。     

基于CAN总线的TPMS轮胎自动定位研究

轮胎自动定位功能是研究TPMS(轮胎压力监控系统)的一个重要课题。目前CAN局域网控制总线是较普及、实时性较高的现场总线且广泛应用于车载电子网络。文中在概述CAN总线和低频通信的基础上,提出了一种基于CAN总线的TPMS轮胎自动定位解决方案。该方案解决了TPMS自动建立轮胎信息发射器和轮胎位置之间的对应问题,能够提高系统的智能程度和可靠性。     

基于CAN总线的远程升级系统

CAN总线是一种应用广泛的实时性现场总线.介绍一种基于CAN总线的远程系统软件升级设计方案,解决了远距离系统升级的困难.该系统采用MCU控制,在CAN总线上,通过PC机控制各个智能节点,实现数据和程序的更新升级.智能节点采用具有IAP功能的MCU构成,利用IAP技术对MCU内部的存储器进行在系统中编程,这样可以做到数据及时保存,即使掉电,数据也不丢失,避免脱机编程带来的麻烦,从而在网络总线上实现了远距离的程序下载.     

基于CAN总线数字化测温系统的设计

本文详述了一套基于CAN总线的通用多点智能测温系统,给出了系统的总体结构框图.介绍了CAN总线和数掌温芯片MAX6675的特性、系统硬件结构和软件实现流程.该系统结构简单、精度离和实时性强,适用于各种大范围的温度监控场合,具有广阔的应用前景.     

CAN总线与RS-485总线的技术优势对比

本文论述了CAN总线与RS-485总线的特点,从总线传输速率、实时性等方面比较分析CAN总线与RS-485总线通信的特点。CAN总线是在RS-485总线的基础上,具有网络节点之间的数据通信实时性强,可靠性高,组网灵活,抗干扰能力强等优点。     

CAN总线与RS-485总线的技术优势对比

本文论述了CAN总线与RS-485总线的特点,从总线传输速率、实时性等方面比较分析CAN总线与RS-485总线通信的特点。CAN总线是在RS-485总线的基础上,具有网络节点之间的数据通信实时性强,可靠性高,组网灵活,抗干扰能力强等优点。     

CAN总线智能检测仪的设计与实现

由于通信速率高,实时性好,可扩展性强,近年来CAN总线已经广泛应用于智能通信网络中。为了满足CAN总线通信速率与故障检测的要求,设计了一款CAN总线智能检测仪。系统硬件平台以AT91sAM7A3为核心,包括CAN模块、CAN接口、时钟芯片、SD卡以及上位机。系统软件设计中进行了CAN总线自动位速率跟踪关键技术设计,并用C#设计了上位机人机界面。通过测试表明,该检测仪具有较高的可靠性、稳定性和可扩展性。     

基于CAN总线的温室测控系统的研究与设计

测控系统性能的优劣是温室作物优质、高产、高效栽培的关键。针对当前温室测控系统中需要解决的各种问题——降低成本、降低功耗、提高抗干扰能力、提高实时性和通信速率,提出了CAN总线在基于微控制器MC68S08QG8的测控系统中的应用,详细介绍了单个智能节点的硬件设计和软件实现,设计了简单的CAN总线应用层协议。运行结果表明该系统结构简单、可靠性高、实时性强。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.