基于有线电视网络互动付费增值系统的设计与实现

【】本文提出了基于有线电视网络和移动支付平台实现互动业务付费的设计方案,如电视收视费预交、最新大片点播、电费、天然气费的代缴、酒店预定、医疗服务预约等。通过本文实现的系统平台,让用户足不出户就能享受多种服务,扩展了传统有线电视的功能。该系统平台采用流行的J2EE框架——Struts+Spring Hibernate来架构,采用分层式结构,从而降低了系统的耦合性,提高了系统平台的健壮性。系统平台自上线以来运行良好,建设该系统平台为新形势下有线电视开展多种多样的增值业务服务提供了一个范例。     

佛山有线电视网络呼叫中心建设规划

介绍佛山有线电视网络呼叫中心基础平台的建设情况以及呼叫中心系统的发展规划,佛山有线电视呼叫中心采用先进的IP技术建立起呼叫中心的基本平台,在此基础平台上,通过建立先进的多媒体业务平台,佛山有线电视呼叫中心最终将发展成为佛山有线电视网络的服务支持平台、数据收集平台和业务销售平台.     

佛山有线电视网络呼叫中心建设规划

介绍佛山有线电视网络呼叫中心基础平台的建设情况以及呼叫中心系统的发展规划,佛山有线电视呼叫中心采用先进的IP技术建立起呼叫中心的基本平台,在此基础平台上,通过建立先进的多媒体业务平台,佛山有线电视呼叫中心最终将发展成为佛山有线电视网络的服务支持平台、数据收集平台和业务销售平台。     

佛山有线电视网络呼叫中心建设规划

介绍佛山有线电视网络呼叫中心基础平台的建设情况以及呼叫中心系统的发展规划，佛山有线电视呼叫中心采用先进的IP技术建立起呼叫中心的基本平台，在此基础平台上，通过建立先进的多媒体业务平台，佛山有线电视呼叫中心最终将发展成为佛山有线电视网络的服务支持平台、数据收集平台和业务销售平台。     

一省一网下的温州有线电视总前端平台技改方案

一省一网是当前有线电视规模化运营的必经之路,温州有线电视网络中心积极响应省委、省政府的重要决策,对温州有线电视总前端平台制订和实施了技改方案.介绍温州有线电视总前端平台通过技术改造实现浙江省网统一业务部署的方案,在不影响现有业务、保障安全播出的前提下,根据省网业务的具体要求和温州有线电视总前端平台的实际情况,通过系统扩容、采用高清转码技术及EPG与CA系统的对接等手段以实现与省网的对接,实现省网业务在温州有线电视网络中的统一部署,达到有线电视一省一网的要求.     

电视+移动互联网APP平台的创新设计与实践

为了适应移动互联网技术发展、做好主流媒体的主要载体,打造了电视+移动互联网APP平台,推出了苏州云媒体手机APP,将有线电视服务从电视屏延伸到手机屏,在确保信息安全和播出安全的基础上,面向电视与手机同步提供直播、点播、智慧社区等多屏服务,并创新设计了多屏交互、电视伴侣、移动云媒体开放平台、APP+广电网络特色业务、业务管控与系统架构.经过半年的市场推广,获得了良好的市场反应.     

适于有线电视业务的大数据分析平台架构设计和实现

本文针对有线电视业务需求和特点,提出了适用于有线电视业务的大数据分析平台架构设计方案.该方案对大数据平台的基础能力进行了充分的设计,并以此为基础构建上层数据处理应用,同时对平台实施过程中需重点考虑的网络和系统容量设计提出了建议,最后给出了在某地有线运营商的实施情况,经测试检验证明了该方案的可行性和有效性.     

基于云计算及SOA架构的媒体应用聚合云平台＊

本文以云计算技术为基础、参考SOA技术架构,提出了一个适用于有线电视运营商的媒体应用聚合云平台架构。该平台聚合传统的电视业务及新媒体业务,支持域内业务运营及网络域间的业务合作运营;平台的底层基于云计算的虚拟技术进行资源整合,实现对资源的统一管理与调度,SaaS层和PaaS层基于SOA架构进行服务及应用设计。该云平台的架构对有线电视运营商云平台的搭建具有一定的参考价值。     

新一代有线电视用户管理系统

介绍了一个有线电视用户管理系统的构成、工作原理、功能和特点,该系统在很多方面都具有较高的性能,体现了这类应用系统主流的IT技术和目前国内有线电视用户管理业务、服务等的发展方向.     

一种有线电视直播EPG服务安全校验系统的设计和实现

DVB广播信息的EPG推送功能是数字电视运营商基于传统广播电视单向机顶盒开展各类增值业务的基础,但DVB广播系统中播出的各类EPG图文信息也面临内容安全上的隐患,迫切需要一种有线电视直播EPG服务安全校验系统来保障DVB广播信息的安全播出.本文提出了一种有线电视直播EPG服务安全校验系统的设计和实现,从平台架构、功能、服务流程和监控部署等环节进行了阐述.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.