宣城市中心医院PACS/RIS系统的构建与解决方案

本文针对提高医院影像科室实际工作效率的目的,通过构建PACS/RIS系统框架、配置数据库系统服务器、配置数据存储、组建医院影像整体网络、实现DICOM标准、规范影像科室业务流程等一系列方法,结合三级数字化医院PACS/RIS系统具体标准规范试验,多方面对医院PACS/RIS系统的建设进行深入剖析,得出了医院PACS/RIS系统整体解决方案,全部投入实施以后可以提高医院影像科室50%的工作效率。     

基于PACS的心电信息系统

介绍了基于PACS的心电信息系统。该系统使得心电图影像数据在存储可靠性、安全性、通用性等方面得以提升。通过分析现代数字化医院度区域医疗卫生服务平台对心电影像的需求．阐述基于PACS的心电信息系统能为现代数字化医院提供更好的支持。基于PACS的心电信息系统,是一个在设计、开发、应用、维护等各方面性价比突出的方案,可为医疗机构、患者提供有力的支持与保障。     

DICOM标准综述

本文简要介绍了DICOM标准、PACS系统以及DICOM标准的应用。     

DICOM全方向M型心动图系统DICOM图像解析方法研究

DICOM全方向M型心动图系统是福州大学生物医学工程研究所的国家发明专利＂全方向M型心动图方法及其系统ZL98125713.5＂和国外的DICOM标准结合生成的新系统。为了实现无损且适应性更好的DICOM图像解析,使用改进的DICOM遍历解析与组织嵌套数据集的方法。在基于对应DCIOM编码的嵌套数据结构的基础上,使用几个递归过程互相调用,实现了无损的DICOM编码,为新系统平稳接入PACS系统奠定了基础。     

PACS系统中的Worklist管理服务的设计与实现

Worklist服务是组成医学图像存档和传输(PACS)系统的重要功能模块.本文介绍了基于DICOM 标准的Worklist服务的基本内容,对Worklist服务功能进行了分析,在此基础上给出了Worklist管理模块的设计与实现.     

WWW和DICOM网关在计算机中的应用

讨论了WWW与DICOM网关的必要性及其实现方法和实现的结果，提出了一种新的医生与医学图像设备(包括CT、MRI、超声等设备)及PACS的交互方式。指出：WWW与DICOM网关是专用标准与通用标准之间的转换，实现这一转换将有利于医疗信息系统的集成及实现远程医疗信息系统。     

一种基于混合架构的PACS系统解决方案设计

针对传统PACS系统仅局限在局域网,不利于对系统进行维护和扩展的问题,提出一种基于B/S和C/S混合架构的PACS系统解决方案。通过分析传统B/S和C/S架构存在的优缺点,并结合医院影像科与腹腔镜科工作流程,构建了PACS的混合架构系统。利用DICOM实现对图像的处理、传输、共享;利用IIS构建WEB应用服务器,从而搭建数据访问方式;利用.NET中的ADO.NET实现对数据库的访问。通过设计实现了系统在中小型医院的应用,实现了图像共享,提高了医院整体工作效率。     

基于VS和SQL的数字PACS系统设计

目前国内X光机成像急需数字化改造,构建成数字化医院。针对这一问题,在VC++.net架构上,设计和实现了一整套数字化医院PACS操作软件。主要包括建立管理数据库,通过以太网方式采集图像并转换成DICOM3.0格式,对图像进行增强处理及胶片和报告的打印等内容。通过现场的联合调试,性能良好,满足了医院的实际使用需求。     

基于PACS的电子胶片系统

针对当前大型影像设备所产生的影像数据量巨大,临床医生浏览体验差的现实情况,采用引入基于PACS的电子胶片系统,将数量巨大的、不易准确把握的影像数据简化为直观、易把握的电子胶片,并以符合DICOM标准的方式进行存储、浏览。结合影像科室、临床医生、患者、信息管理部门等多方实际使用过程中反馈的信息,我们可以得出基于PACS的电子胶片系统能够为影像科室、临床医生、患者提供三方共赢的良好效果,是对PACS具有积极意义的功能扩展,使得整个PACS更加灵活高效,为医疗机构、患者带来高效的支持与保障。     

基于HL7的医疗数据集成及系统设计

HL7是数字化医院系统电子数据交换的一个标准,覆盖整个医院信息系统。分析了HL7标准及其数据交换的基本原理,并通过基于SOA构架的服务总线技术,建立基于HL7标准的数字化医院信息系统构架。该系统通过HL7数据网关的数据转换实现与医院内部LIS、PACS等多个系统的无缝集成。讨论了该系统的通信协议及数据整合方案,设计了完整的基于HL7的数据通信协议及数据集成模块实现框架。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.