高灵敏度分段结构光纤倏逝波传感器

提出一种基于倏逝波吸收原理的高灵敏度分段结 构光纤倏逝波传感器。运用光束传播法(BPM)对分 段和直形波导模型进行数值模拟,分段波导中高阶模在每次分段的第1个界面上被反复的激 发和吸收。分析 不同结构和溶液浓度对传感器灵敏度的影响,通过化学腐蚀方法制备出不同结构参数的倏逝 波传感器,并用 不同浓度亚甲基蓝溶液对传感器的灵敏度特性进行实验验证。实验结果表明,在传感直径相 同和分段结构传 感器的传感长度3cm短于传统的单一的直形传感器传感长度5cm的条件下,分段结构传感器 的灵敏度是 0.038L/g,优于直形传感器的灵敏度0.026L/g。分段结构光纤倏逝波传感器能有效激发 光纤中低阶模到高 阶模的转变,从而提高传感器的灵敏度。实验结果与模拟和理论结果相符。因此,分段结构 光纤倏逝波传感 器相对于传统的单一的直形传感器不仅具有较高的灵敏度,且机械强度较高。     

光子晶体光纤CO2气体传感器的研究

为了能高灵敏度地检测CO₂气体的体积分数,基于红外光谱吸收原理,设计了一种以9m长的空芯光子晶体光纤作为传感单元的CO₂气体传感器。利用该传感器测量了不同体积分数的CO₂在同一吸收波长下的吸收光谱图。结果表明,气体的吸收光强和气体的体积分数之间呈线性变化,与比尔-朗伯定律一致;传感器的灵敏度可达4.389×10-5W。可通过加长光子晶体光纤的长度,来增加气体吸收的有效距离,使传感系统获得较高灵敏度。     

新型的分段结构光纤倏逝波传感器

提出一种基于倏逝波吸收原理的分段结构光纤倏逝波传感器。运用光束传播法(BPM)对分段和直形波导模型进行数值模拟,分段波导中高阶模在每次分段的第一个界面上被反复地激发。分析不同结构、纤芯直径和溶液浓度对传感器灵敏度的影响,通过化学腐蚀方法制备出不同结构参数的倏逝波传感器,并用不同浓度亚甲基蓝溶液对传感器的灵敏度特性进行实验验证。实验结果表明,在传感直径相同的条件下,传感长度为5cm分段结构光纤倏逝波传感器的灵敏度为0.0135L/mmol,优于传感长度为6cm的传统的单一直形传感器的灵敏度0.0102L/mmol。分段结构光纤倏逝波传感器能有效地激发光纤中低阶模到高阶模的转变,从而提高传感器的灵敏度。实验结果与模拟和理论结果相符。因此,分段结构光纤倏逝波传感器相对于传统的单一的直形传感器不仅具有较高的灵敏度,且机械强度较高,在物质光谱检测方面有着潜在的应用。     

光谱吸收光纤气体传感技术探讨

简述了光纤气体传感器的基本特性.介绍了几种光谱吸收光纤气体传感的方法.详细阐述了各种传感原理.分析了影响光谱吸收光纤气体传感精度的因素.     

光纤气体传感与谱特性研究

吸收型气体传感器的结构决定气体传感器的灵敏度和吸收效果。根据C2H2气体的光谱吸收特性,设计了一种简易的测试C2H2气体吸收强度的传感器结构。基于Gaussian03软件计算C2H2气体分子的振动强度,从分子能级角度阐述了吸收型气体传感器在近红外光区选择性光谱吸收的特点。同时通过实验加以验证,对比了理论计算与实验结论。     

基于光谱吸收原理光纤甲烷传感器实验分析与研究

光纤气体传感器是一种新型传感器,从光纤链路损耗实验、光源驱动和锁相放大电路输出波形实验、甲烷气体吸收实验等3个方面对甲烷气体传感器性能进行了分析和测试。实验结果表明基于光谱吸收原理的光纤甲烷传感器系统性能较为稳定,灵敏度较高,测量范围宽,重复性较好,因此该传感器适合于煤矿井下瓦斯检测,满足各种要求。     

光纤甲烷气体传感器

本文介绍了基于干涉法和光谱吸收法的光纤甲烷气体传感器系统的原理、设计和系统结构,并对它们进行了比较。采用光学测量方法,不仅能精确测量甲烷气体浓度,而且安全可靠。尤其在1．6654μm波长处,采用光谱吸收法测量甲烷气体浓度,可使传感系统的灵敏度变得更高。     

基于波长调制技术的内腔式气体传感研究

气体传感理论和实验研究已成为当今光纤传感领域的热点之一。波长调制法和有源内腔法是提高气体传感灵敏度的两种有效方式。结合上述两种气体传感方法,构建一个基于波长调制技术的内腔式气体传感系统。讨论气体吸收光谱二次谐波分量与气体浓度之间的函数关系,从理论和实验两方面确定系统的最佳参数。利用提取多条吸收谱线的二次谐波分量,采用平均算法进一步提高系统灵敏度,进行乙炔气体传感的灵敏度可达7.5×10-5。以光纤光栅作为波长参考,建立系统的波长-电压响应曲线,进而检测气体的吸收波长值。进行乙炔气体传感时吸收波长检测的绝对误差不超过0.445 nm。     

基于石墨烯的NO2和NH3气体传感器研究进展

室温下石墨烯具有较大的分子吸附比表面积、低噪声、高载流子迁移率等优异电学性能,是一种性能极佳的传感材料。与传统无机氧化物气体传感器相比,石墨烯气体传感器具有工作温度低、能耗小、恢复性高的优点。文章对两种石墨烯气体传感器的研究进展进行了综述。首先根据气体选择性不同,研究了NO₂和NH₃两种石墨烯气体传感器。然后对它们的灵敏度、气体响应灵敏度、响应时间等特性进行了分析对比。该项分析研究工作对气体传感器的实际应用与推广具有一定参考价值。     

布里渊温度和压力传感器增敏设计

设计了一种基于分布式传感技术的薄壁圆筒型液体温度和压力传感器.选取具有耐腐蚀、弹性性能好以及热膨胀系数大的不锈钢316L和铍青铜C17200分别对传感器进行封装.利用有限元仿真软件ANSYS Workbench对封装的传感器压力和温度特性进行仿真分析,得到器件的径向应变量,分析其布里渊频移随压力和温度的变化关系.仿真实验表明,使用铍青铜C17200封装的传感器压力灵敏度和温度灵敏度更高,在0～12 MPa、-5～40℃范围内压力灵敏度达11.1 MHz/MPa,温度灵敏度达2.56 MHz/℃,相较于普通单模光纤分别提升7.4倍和1.7倍.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.