基于压缩感知信道能量观测的协作频谱感知算法

压缩感知为认知无线电宽带频谱感知提供了一种新思路。基于压缩感知原理,该文提出一种不需要重构宽带频谱本身,而是直接重构各信道能量的协作频谱感知方法。多个次用户使用宽带随机滤波器组获取信道能量的观测值。融合中心同步接收多个用户的能量观测,并利用同步稀疏自适应匹配追踪协作重构算法重构所有次用户的信道能量。仿真结果表明加性高斯白噪声环境下该协作感知方法所需的滤波器数目仅为传统方法的20%左右,瑞利衰落信道下也仅需传统方法的40%,有效降低了系统复杂度并改善感知性能。同时,该文提出的同步稀疏自适应匹配追踪算法对比经典的同步正交匹配追踪算法在重构精度及算法复杂度两方面都有所提升。     

基于表决融合的带宽受限的协作频谱感知算法

协作的频谱感知使认知无线电（CR）网络对主用户进行可靠的检测,并避免了对主用户通信的干扰。数据融合是协作的频谱感知的关键技术。但是当协作认知无线电用户较多时,它们向融合中心汇报的感知信息就会占用大量的带宽。本文提出了将表决融合准则与检查策略相结合的协作频谱感知的方法,来减少发往融合中心的平均感知比特数,从而有效节约传输带宽。推导分析了该算法在理想信道和非理想信道中的频谱感知性能,并给出了这两种情况检测概率的闭合式。仿真结果表明,此种基于表决融合准则的检查协作频谱感知算法的性能最优,即在较高的感知性能下有大量的感知比特的节约。      

基于可靠次用户信息的协作频谱感知算法研究

对认知无线电系统最基本要求之一就是次用户必须有能力以高的精确率来确定主用户是否存在。而以前对认知无线电频谱感知的研究表明:在实际认知网络中次用户之间的相互协作可以提高其频谱检测性能。然而,对于协作频谱感知而言,随着协作次用户数目的增加,势必会增大用于传输本地检测结果到融合中心的专用控制信道带宽,从而增加系统开销。该文在控制信道带宽有限的约束条件下,提出一种通过考虑可靠次用户信息的协作频谱感知算法来进一步改善频谱检测的性能。该算法的基本思想:只有具有可靠的本地检测结果的次用户才发送自己的检测结果到融合中心,否则,该次用户不发送任何信息。同时,对提出的该算法在理论上进行了推导,通过仿真结果表明:在控制信道带宽受限的约束下,相比于传统的或门协作频谱感知算法,提出的算法能够大大改善对主用户的检测性能。     

基于认知无线电的合作频谱感知算法研究

在认知无线电网络中,认知无线电用户需要准确、实时地检测到授权用户的存在以及闲置的频带。认知无线电中的合作频谱感知类比于无线传感网络中的分布式决策,即每一个传感器做出本地判决并将这些判决结果汇报给融合中心,再根据某种融合准则做出最终的判决。融合准则主要分为OR规则和AND规则。传统合作频谱感知是指所有的认知用户都参与合作。文中通过分析传统合作频谱检测的不足之处,提出只选择具有较高信噪比的认知用户参与合作。从仿真结果看出,此方法的检测性能较之传统的合作检测算法有了很大的提高。     

基于信任簇的协作压缩频谱感知新算法

频谱感知是实施认知无线电CR的关键问题。一些恶意用户篡改数据,降低了频谱感知性能。为此,提出面向恶意用户环境的基于信任簇的压缩频谱感知TCCSS算法。先利用最大似然ML估计簇离主级用户的距离,并与预设的门限值比较,寻找到信任簇。然后,依据信任簇提供的信息,使用压缩频谱感知算法对信道状态进行检测。仿真结果表明,提出的TCCSS算法能够有效地应对恶意用户的环境,准确地检测恶意用户,同时保持高的频谱检测率。     

Ad Hoc认知网络中基于梯度算法的协作压缩频谱感知方法

ad hoc认知网络(CRAHNs)比起传统ad hoc网络有很多优势,如分布式多跳结构及动态变化的网络拓扑等。频谱感知是认知无线电技术的基础,采用压缩感知方法以低于奈奎斯特采样率的速率来获得较好的重构信号,同时可减轻数字处理设备的压力。本文使用多跳模型,每个认知用户感知的频谱不仅包括主用户的主频谱,也包括认知用户自身收到其他认知用户干扰的更新频谱。由于具有动态特性的ad hoc网络缺少融合中心,所以本文中提出一种基于梯度的分布式协作感知算法。该算法基于能量检测,具有可靠的感知性能和较少的能量消耗,并能快速收敛。仿真实验验证了算法的有效性。      

基于OMP算法的宽带频谱感知

频谱感知是认知无线电的一项关键技术,其能够检测出未被主用户占用的频谱空穴供次用户接入使用,提高频谱利用率.宽带频谱感知要求对数GHz 的带宽进行检测,过高的采样速率、大的数据量对现有的硬件设备提出了巨大的挑战.本文利用宽带频谱的稀疏性提出一种基于OMP算法的宽带频谱感知方法.该方法利用MWC采样实现对宽带模拟信号直接压缩采样;利用自相关矩阵对称分解特性和主用户信号独立性,得到有限维压缩采样信号模型,利用AIC/MDL准则估计稀疏度作为OMP算法迭代停止的条件,大大减少了算法复杂度;该方法不需要重构接收信号的PSD,直接在时域根据低速率采样信号,检测被占用信道.仿真结果表明,当带内信噪比大于9dB时,频谱检测概率高于90％.     

协作频谱感知中快速自适应门限策略

频谱感知是认知无线电的一个重要组成部分。在异构网络中,认知节点的移动会导致接收信号强度和噪声功率发生变化,这使得采用固定门限参数的频谱感知策略无法保证在任何时候均工作于最优感知状态。为了解决这一问题,该文提出一种自适应门限参数的协作频谱感知策略。该策略无需主用户信号、信道以及环境噪声的任何先验信息,参与协作的所有认知节点采用最陡下降法自适应调节门限参数,控制中心采用最优数据融合算法获得最小检测代价。仿真结果显示,当认知节点参数发生变化时,协作节点的门限参数快速收敛于最优值,使系统贝叶斯风险最小。     

利用组稀疏特性的宽带压缩频谱感知

基于认知无线电的动态频谱接入需对宽带信道进行频谱感知,而越来越高的采样速率日益成为宽带频谱感知的瓶颈。压缩感知作为一种新的信号获取技术为亚奈奎斯特采样速率下的宽带频谱感知提供了一种可行方案。在相关应用场景中,如果能够挖掘相关先验信息并在重构算法中整合这些信息,将大幅提高压缩感知的性能。本文基于压缩感知技术,利用信道的划分信息及宽带信号的组稀疏特性,提出了一种组稀疏贪婪算法GOMP。该方法在成熟的贪婪算法基础上,利用子信道内多频点的组测量信息,根据组测量的概率分布特性来识别宽带信道的活动子信道。这种组测量识别方式使算法能以较少的观测数据实现对宽带信道的快速准确感知,极大地降低了宽带频谱感知所需的采样速率。实验结果表明:该算法比传统的OMP算法及BP算法不仅具有更好的重构效果及频谱检测性能,而且具有更好的压缩性能及实时性能。      

基于扩散机制的分布式宽带压缩频谱感知算法

针对认知无线电网络共享频谱资源的特征,本文提出一种基于扩散机制的分布式宽带压缩频谱感知方法。该算法包含两个工作阶段。在第一个阶段,每个认知用户对观测信号进行压缩感知和独立重构,产生本地频谱估计;在第二阶段,各个认知用户根据扩散机制协作更新频谱估计信息,实现最优估计。仿真结果表明,该算法与一致性分布式压缩频谱感知方法相比,可以快速增强认知无线电网络频谱感知能力,可应用于动态拓扑结构的认知无线电网络。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.