创新技术营造崭新CDMA世界

在CDMA运营商中,北美目前的主流CDMA运营商都在将CDMA网络升级到EV-DO Rev.A版本。Verizon Wireless目前已经将60%～70%的基站升级为cdma2000 1x EV-DO和cdma2000 1x的双频基站,其EV-DO网络已经覆盖242个主要城市和180个机场,约2.08亿人口。Vetizon Wireless计划在几个月内将所有的基站升级到EV- DO Rev.A版本,覆盖2.6亿人口。Sprint Nextel从2006年开始,也将CDMA网络升级到EV-DO Rev.A版本,并计划在今年年底实现EV-DO Rev.A网络覆盖2.25亿人口。加拿大第二大电信运营商TELUS也正在将CDMA网络升级为EV-DO Rev.A版本。     

北电——CDMA市场不可或缺的中坚力量

目前,北美主流的CDMA运营商部在将CDMA网络升级到cdma2000 1xEV-DO Rev.A.例如,Verizon Wireless目前已经将6 0%～7 0%的基站升级为cdma2000 1x EV-DO Rev.     

从CDMA到LTE的移动网络技术演进

本文讨论了CDMA向LTE演进过程中各项技术的主要特性,重点分析了cdma2000 1x EV-DOA、cdma2000 1x EV-DO增强型、calma2000 1x EV-DOB以及LTE等技术.在此基础上,提出了网络演进中各项技术所需要关注的主要问题.为CDMA技术的发展和网络演进提供了参考意见.     

cdma2000 1x EV-DO网络优化思路

本文结合cdma2000 1x EV-DO的技术特点探讨了其网络优化的工作思路,重点涉及cdma2000 1x和cdma2000 1x EV-DO这两种网络在优化思路方面的重要区别、cdma2000 1x EV-DO前向链路优化要点和反向链路优化要点等。     

CDMA网络技术发展现状和趋势

伴随着国内运营商的重组,CDMA技术重新受到国内业界的关注。目前。总的来看CDMA技术的演进主要包括以下3个方向。 首先,考虑到cdma2000 1x网络自身演进的要求,业界制定了cdma2000 1x后续标准。同时,为了满足系统在现有频段上扩展无线宽带数据能力以及在无线数据系统上承载各类应用服务（如VoIP/ PSVT等）的需要,业界制定了cdma2000 1×EV-DO Rev.0/A/B标准。     

角度一:韩国CDMA成功的3G启示

作为韩国最大的移动运营商,SK电讯于1996年全球最先开展CDMA商用,并于2000年率先商用CDMA 1x,2001年领先商用cdma2000 1x EV-DO.目前,SK电讯已经拥有全世界最大规模的CDMA忠实用户群.     

cdma 1x以后演进策略以及cdma2000网络演进策略

本文首先总结了从IS 95到cdma2000的标准演进过程(分别从无线侧和网络侧).然后结合从cdma 1x到cdma2000 EV-DO/DV在性能和结构上的改进与提高,提出运营商可能的cdma2000的网络演进方式.并附图表说明网络结构.     

cdma2000 1x与cdma2000 1x EV-DO的互操作及实施

本文首先介绍了cdma2000 1x与cdma2000 1x EV-DO互操作的4种解决方案,然后对它们进行了分析对比,最后给出多厂家供货条件下cdma2000 1x运营商的互操作规划策略。     

cdma2000的下一步应该怎么走

目前,在CDMA网络升级到cdma20001x之后,应该进一步采取什么样的途径过渡到3G,全球通信界正展开着激烈的讨论。在我国,这也是关心CDMA发展的业内人士所共同关心的问题。从CDMA过渡到3G的途径有两条:誗一条是从cdma20001x先过渡到EV-DO,然后再过渡到EV-DV。誗另一条是从cdma20001x直接过渡到EV-DV。CDMA(IS-95)过渡到cdma2000的两种途径如图1所示。1从技术角度看EV-DO和EV-DVEV-DO的主要技术特点:誗可以在1郾25MHz的信道里支持高达2郾4Mbit/s的数据速率;誗不能提供到cdma20001x的后向兼容;誗部署EV-DO需要专门的频谱。E…     

cdma2000 1x EV-DO Rev.A无线网络规划的思考

cdma2000 1x EV-DO主要有Rev.0和Rev.A两个版本,随着cdma2000 1x EVDO Rev.A技术和海外市场的快速成熟,cdma2000 1x EV-DO Rev.0逐渐被Rev.A取代.从基于cdma2000技术的3G网络建设经验来看,大多数是在已有cdma2000 1x网络的基础上建设cdma20001x EV-DO网络的.正确认识3G无线网络的特点以及3G和2G无线网络规划之间的关系,是选择无线网络规划方案的基础.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.