一种基于质量引导和最小不连续合成的InSAR相位解缠算法

该文提出了一种质量引导和最小不连续相融合的InSAR相位展开算法。根据相位质量图将缠绕相位分割为高低质量区域,高质量区域采用质量引导算法进行求解,然后将每个解缠后的高质量相位块视为抽象相位点,在低质量相位区域内部和抽象相位点之间进行最小不连续优化,求解最终解缠相位。对真实InSAR数据的处理结果表明,该算法可以有效克服质量引导算法和最小不连续算法中的误差传播,保持高质量区域解缠相位的精度,提高解缠效率。     

噪声消除算法在干涉SAR相位解缠中的应用研究

本文把噪声消除算法应用在干涉SAR相位解缠中,分析了该算法的特点.为了更好地解缠干涉SAR数据,提出了一种改进的方法.在原有两点规则的基础上,提出了三点规则,并提出把两点规则和三点规则结合使用来提高相位解缠稳健性的混合算法.该方法有效地解决了噪声消除算法在解缠质量差干涉相位图时不收敛的问题,在保持了算法的计算精度的同时提高了算法的稳健性.对仿真和真实干涉SAR数据的实验结果验证了本文方法的有效性.     

InSAR相位解缠最小二乘算法的研究

相位解缠是干涉合成孔径雷达（InSAR）测量地形高程的重要步骤之一。由噪声和欠采样导致的相位不一致性问题是相位解缠的难点。本文分析了相位解缠最小二乘算法的原理和性质，总结了算法的优缺点。最后采用加拿大RadarSatl数据进行实验，验证了分析的结果。     

噪声消除算法在干涉SAR相位解缠中的应用研究

本文把噪声消除算法应用在干涉SAR相位解缠中，分析了该算法的特点．为了更好地解缠干涉SAR数据，提出了一种改进的方法．在原有两点规则的基础上，提出了三点规则，并提出把两点规则和三点规则结合使用来提高相位解缠稳健性的混合算法．该方法有效地解决了噪声消除算法在解缠质量差干涉相位图时不收敛的问题，在保持了算法的计算精度的同时提高了算法的稳健性．对仿真和真实干涉SAR数据的实验结果验证了本文方法的有效性．     

Goldstein枝切法对存在间断相位缺陷的解缠研究

Goldstein枝切法作为相位解缠中路径积分法的重要算法之一,其解缠结果易受到噪声或间断相位缺陷所引起的残差点影响。为了研究相位间断缺陷对解缠算法的影响,模拟了具有间断相位缺陷的数据,采用Goldstein枝切法进行了系统的解缠研究。重点研究了残差点对枝切线的搜索窗口半径大小的影响,并将解缠相位与真实相位进行了比较。结果表明,在单相位间断和双不相交的相位间断缺陷的情况下,Goldstein枝切法仍然具有较好的解缠效果;对于双交叉相位间断缺陷,Goldstein枝切法在这一局部区域无法得到正确的解缠结果;通过研究枝切线搜索窗口半径对解缠的影响,验证了存在“有效枝切线搜索窗口半径”的结论。此实验结果对于采用或联合采用Goldstein枝切法进行的相位解缠理论研究和应用具有参考价值。     

一种新的InSAR相位解缠算法

干涉相位解缠直接影响到干涉合成孔径雷达(InSAR)高程测量精度,是InSAR处理及其重要的一步。文中在研究了最小二乘法相位解缠的基础上,提出了一种基于解缠相位误差迭代补偿的加权最小二乘法。首先,采用加权最小二乘法得到相位解缠的初值,然后,再通过对解缠误差相位的迭代补偿,对解缠效果进行优化。另外,针对迭代次数的合理选择,还设计了一种迭代机制,避免了迭代次数过多引入的补偿冗余和迭代次数过少导致的补偿不足。相比最小二乘法,该方法通过加权处理对相位噪声的全局影响进行了约束;通过误差迭代补偿进一步大大提高了解缠精度。仿真试验结果表明:文中所提方法具有优越性。     

基于贝叶斯门限的静态小波域干涉相位图滤波

干涉相位图中的噪声会妨碍后续的相位解缠,并降低最终的DEM精度。本文提出一种静态小波域的干涉相位图滤波方法。该方法能够自适应地计算贝叶斯门限分类静态小波系数,并可根据干涉相位图特性自适应地选取小波变换的最优尺度值。文中用仿真数据和SIR-C/X SAR在意大利Etna火山的干涉数据进行实验,并将该文算法处理结果与均值滤波、中值滤波和Goldstein滤波的结果相比较。用该算法处理,处理仿真数据所得结果的最小均方误差和相关性均优于其余方法。该算法处理Etna火山的干涉数据时,残余点从30430点降至113点,远少于其余算法的处理结果。实验结果表明:该文算法能够较好地保持干涉条纹细节,有效减少干涉相位图中的残余点,与Goldstein滤波相比也具有一定优势。     

采用JVC算法生成枝切线的干涉相位解缠方法

海面高程3维成像是随着天宫二号发射而实现的技术,相位解缠是3维成像高度计高程反演的关键步骤。为改进Goldstein枝切法,缩短干涉相位图中枝切线的总长度,提升相位解缠的精确性,该文提出一种基于JVC全局最优线性分配算法生成枝切线的相位解缠方法。首先找出干涉相位图中的所有残差点并计算每一对异号残差点之间的距离;通过对比每对残差点之间的距离和各自与最近边界的距离和,确定采用JVC算法放置枝切线还是在残差点与边界之间直接放置枝切线,使得平衡枝切线的总长度最短。通过对3维成像高度计海面高程仿真干涉相位图和Etna火山地区干涉图像进行解缠实验并与其他3种算法进行对比,表明该算法的解缠结果与真实相位值误差相对较小,而且能够有效避免“孤岛现象”的产生。     

基于聚类分析多通道InSAR联合相位解缠算法

多通道InSAR相位解缠不依赖相位连续性假设,因此可以实现复杂地区的相位解缠绕,然而多通道相位解缠绕需同时处理多幅缠绕相位图,在运算效率和内存使用上存在着一定的压力。基于聚类分析的多通道相位解缠算法(Cluster-Analysis,CA)有效解决了运行效率问题,但噪声鲁棒性差。因此,提出将聚类分析和区域扩展相结合的相位解缠绕算法。该算法首先利用边缘提取算子,获得干涉相位图中由于相位跳变导致的边缘曲线,然后利用CA算法对边缘曲线进行相位解缠绕,将解缠曲线作为区域扩展的种子像素,进行区域扩展相位解缠。这样,既可以实现复杂地形的相位解缠,又可以有效抑制噪声。实验结果表明,算法在保持较好解缠精度的同时,一定程度上提高了运算效率。     

噪声条件下相位解缠路径优化算法研究

相位解缠绕是干涉SAR获取数字高度图数据的关键部分,它直接影响着数据的精度。该文在Goldstein支切法的基础上进行了改进,提出了根据残差点生成质量控制图,运用三叉树堆栈的方法,选择最优的积分路径,阻止了由于支切线设置错误所引起的误差的传播,既保持了支切法速度快的特点,又优化了算法,提高了解缠精度。利用仿真数据对Goldstein算法和改进算法的解缠精度进行了定量比较分析,还对ERS1、ERS2真实SAR数据进行了解缠处理。结果表明,改进算法在信噪比较小的情况下,仍能有效限制误差的全局传播,提高了相位解缠精度。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.