基于微通道热沉的片状激光放大器散热模拟及优化

为实现片状结构高重复频率大能量激光放大器的高效热管理，采用有限元分析(FEA)方法，充分考虑增益介质内部非均匀热分布、微通道热沉中的流速、对流扩散等影响因素，引入流-热-固多物理场耦合数值分析模型，对激光放大器热沉进行分析优化，并基于优化结果探讨了不同流速下微通道热沉的散热冷却能力。模拟结果表明：当基底厚度H_b=2 mm、单个微通道高度H_c=4 mm和宽度W_c=0.4 mm、两微通道的间距W_w=0.3 mm时，微通道热沉冷却能力最强，热阻最小；微通道内冷却液流速过大会导致较大的流动压力损失；微通道热沉的平均等效换热系数可达50000 W/(m²·K)。     

单层与双层高效微小通道换热器的数值研究及优化

单层微通道热沉解决了高热流密度器件冷却问题,但被冷却器件表面存在温差大的缺点,双层微通道热沉由于其独特的结构设计,提高了被冷却表面的温度均匀性。建立了双层热沉的三维流固耦合模型,以恒定泵功为约束条件,热阻为热沉性能评价指标,比较了单层、双层逆向与双层同向热沉性能,结果表明,在泵功0.05 W和热流密度100 W/cm~2时,三种不同形式热沉热阻分别为0.1677k/W、0.1535k/W、0.1895k/W,热沉被冷却表面的最大温差分别为9.76 K、6.06 K、12.34 K,通过比较双层逆向热沉显著改善被冷器件温度均匀性,降低热阻。双层热沉上下通道泵功分配对热沉性能有较大影响,通过优化,分别使双层同向热沉、逆向热沉热阻减小15.83%、9.84%。     

微通道散热大功率半导体激光器研究

基于GaInAs/AlGaAs应变量子阱大光腔结构激光器芯片和无氧铜微通道热沉,采用In焊料烧结工艺,制作了976nm大功率连续激光器单条。在20℃热沉冷却条件下,输入电流110A时,输出功率104.9W,电光转换效率达到最大值64%。输入电流300A时,输出功率276.6W,电光转换效率达到54.2%。对激光器单条的热阻以及特征温度进行了测试分析,根据分析结果模拟了激光器单条在大电流下的输出特性,模拟结果显示热饱和是限制激光器最大输出功率的原因。因此,为了提高大功率激光器的输出功率,需要进一步提高激光器的特征温度,并降低热阻以改善散热情况。     

复合型微通道热沉设计与制作技术研究

从大功率半导体激光器可靠性封装和应用考虑,利用商用有限元软件Abaqus与CFdesign对微通道热沉材料、结构进行优化设计,结合相应的制造工艺流程制备实用化复合型微通道热沉。微通道热沉尺寸为27 mm×10.8 mm×1.5 mm,并利用大功率半导体激光阵列器件对所制备热沉进行散热能力、封装产生的"微笑效应"进行了测试,复合微通道热沉热阻约0.3 K/W,"微笑"值远小于无氧铜微通道封装线阵列,可以控制在1μm以下。复合型微通道热沉能满足半导体激光阵列器件高功率集成输出的散热需求与硬焊料封装的可靠性要求。     

基于微通道散热的大功率LED阵列的热阻研究

采用微通道致冷技术,设计了大功率LED阵列的外部热沉.针对直鳍片微通道结构的散热器,理论分析了影响其热阻的因素,推导了热阻表达式,并对微通道散热器的结构参数进行了优化,指出当通道宽度取某一数值时,散热器的热阻可达到最小.利用MATLAB软件,对LED的热阻与微通道散热器的结构参数和冷却液的压力关系进行了仿真,给出了直观的关系曲线.     

应用于大功率激光二极管列阵的单片集成微通道制冷热沉

介绍了一种应用于大功率激光二极管列阵的新型单片集成微通道制冷热沉.这种热沉已制造并经过测试.10叠层的激光二极管列阵的热阻为0.121℃/W.相邻两个激光条的间距是1.17mm.在20%高占空比条件下,波长为808nm左右,峰值功率可以达到611W.     

AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array

介绍了一种应用于大功率激光二极管列阵的新型单片集成微通道制冷热沉．这种热沉已制造并经过测试．10叠层的激光二极管列阵的热阻为0.121℃/W．相邻两个激光条的间距是1.17mm．在20%高占空比条件下，波长为808nm左右，峰值功率可以达到611W．     

高光束质量大功率半导体激光阵列的微通道热沉

针对现有高光束质量大功率半导体激光阵列内部发光单元条宽、填充因子不断减小,腔长不断增加的发展趋势所带来的热源分布及长度变化影响器件热阻的问题,利用分离热源边界条件结合商用计算流体力学(CFD)软件FLUENT进行数值计算,获得微通道热沉热阻随阵列器件发光单元条宽、空间位置变化关系以及不同阵列腔长对应的微通道优化长度.根据优化参数制备获得尢氧铜微通道热沉,并对宽1 cm,腔长1 mm,条宽100μm,填充因子为25%的半导体激光阵列进行散热能力测试,冷却器外形尺寸27 mm×11 mm×1.5 mm.微通道热沉热阻0.34 K/W,能够满足半导体激光阵列器件高功率集成输出的散热需求.     

高功率半导体激光器微通道热沉的模拟优化

针对原curamik微通道热沉因进水通道流量不均而导致散热不均匀的现象,基于FLUENT软件对其进行数值模拟。从内部结构及热沉材料方面提出优化方案,并进一步获得在热沉高度和进出口宽度为固定值的条件下,微通道宽度、间距及通道脊长度3个因素分别对芯片表面温升和压降的影响规律。根据优化的参数,通过选区激光熔化技术制备获得纯镍微通道热沉并进行芯片封装测试。结果显示,微通道热沉散热均匀,热阻为0.39K/W,压降为140kPa,能够满足输出功率为80 W的半导体激光器单巴条芯片的散热要求。     

固体激光器新型冷却热沉的设计和CFD数值研究

为固体激光器设计了一种新型内部结构扰流柱结构的冷却热沉,采用计算流体力学（CFD）方法对此水冷热沉的三种典型设计方案以及传统的空腔结构和等截面小通道结构热沉分别进行了数值模拟,据此研究了冷却水流量对各种方案的增益介质最高温度、冷却面温度分布以及热沉的压力损失等特性的影响。在相同传热量和相同冷却水流量前提下,等截面小通道热沉和扰流柱热沉的传热特性都明显优于空腔结构热沉。与等截面小通道水冷热沉相比较,扰流柱热沉传热热阻更小,而流动压力损失较大。数值模拟结果表明扰流柱热沉传热性能优于传统的两种热沉（空腔结构和等截面小通道结构）设计方案,具有更好的冷却效果。在较高流量下工作时,扰流柱热沉传热性能略优于等截面小通道热沉,在较低流量下工作时则显著优于等截面小通道热沉。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-