Rayleigh波与Love波双模式声波产生器件的建模及特性北大核心

针对Rayleigh波和Love波两种声波不能在同一声波器件中产生的不足,提出了一种Rayleigh波与Love波双模式声波产生器件结构和三维建模方案。该三维建模方案用有限元分析法逼近压电基片、叉指换能器及波导层等实际器件结构和尺寸。通过一个压电基片材料为128°YXLiNbO3,波导层材料为ZnO,叉指换能器材料为Al电极的双模式声波产生器件三维模型实验,验证了该双模式声波产生器件的可行性。实验结果表明,在49-51 MHz的频率内,该双模式声波产生器件有一个Rayleigh波模态解和一个Love波模态解,其频率分别为49.5和49.7 MHz。在49.5 MHz处的Rayleigh波只存在Y和Z方向质点位移的周期性变化,X方向的质点位移为0,且Y方向位移与Z方向位移相位相差90°。在49.7 MHz处的Love波沿X方向传播,且只存在Y方向的质点位移,没有其他方向的质点位移,此时X方向为该Love波的纯模方向。     

多叉指Rayleigh波器件的建模及特性研究

针对目前改变Rayleigh波器件中波的传播方向和强度较复杂的问题,提出了一种多叉指Rayleigh波器件结构和三维建模方案。该三维建模方案用有限元分析法去逼近实际器件的压电基片和叉指换能器等真实器件结构和尺寸。选取压电基片材料为128°YX-LiNbO_3、叉指换能器为Al电极,分别对叉指换能器数目为4、6、8的多叉指Rayleigh波器件进行三维模型实验,验证了该器件的可行性。实验结果表明,多叉指Rayleigh波器件可以在不同角度激发Rayleigh波,该波只有x、y方向的质点位移分量,且质点的最大位移主要集中在器件表面的中心位置。此外,器件的模态频率和质点最大位移随着叉指换能器数目的增加而增大,由此产生的Rayleigh波强度和器件的混合性能也会增强。     

基于磁控溅射的Love波器件ZnO波导层制备研究

以ZnO为靶材,采用射频磁控溅射技术,在制备有叉指换能器(IDT)的LiNbO3衬底上制备了具有ZnO波导层的Love器件。在制备过程中,溅射室真空度为4.0×10-4 Pa,溅射气压为5.4Pa,溅射时间为400min,溅射温度150℃。使用X线衍射仪对ZnO波导层的晶向和微观结构进行分析,并用网络分析仪对以ZnO为波导层的Love波器件进行响应特性分析。测试结果表明,制备的ZnO波导层具有高度(002)择优取向,平均晶粒尺寸为50.99nm,内应力较小。以该ZnO为波导层的Love器件的中心频率为101.764MHz,插入损耗为-21.2dB,具有较好的响应特性。     

液相检测的Love波传感器的制作与研究

在分析Love波传感器液相质量检测机理的基础上,设计并制作了以36°YXLiTaO3为基底,交联处理的聚甲基丙烯酸甲酯(PMMA)为波导层的Love波器件。器件的中心频率为118 MHz,插损为-16 dB。通过建立电镀实验模型,实时的检测了在液相中吸附于阴极薄膜上铜的质量,并测试到传感器的灵敏度为-0.387 cm2/g。分析了灵敏度实验值与理论值的差别,进一步提出了改进方案与措施。     

36°YX-LiTaO_3/SiO_2结构Love波气体传感器研究

该文研究了一种覆盖六氟-2-羟基异丙基聚硅氧烷(SXFA)敏感膜,并针对有机磷化学物检测的新型Love波传感器,采用36°YX-LiTaO3与SiO2分别作为Love波延迟线器件的压电基底与波导层材料。将所研制的Love波器件作为差分振荡器的频率控制单元,结合SXFA敏感膜,开展了针对甲基磷酸二甲(DMMP)的气体传感实验,分析了不同波导层膜厚对Love波传感器气体响应的影响,并与传统瑞利型声表面波模式的气体传感器性能进行了对比,实验结果显示,Love波模式传感器表现出高灵敏度特性。     

采用聚能相控阵换能器的SAW RF频谱分析仪/信道机

用声表面波(SAW)验证了波衍射引起的傅里叶变换原理。输入RF信号驱动—SAW叉指换能器相控阵列,换能器用作弯曲衍射栅,使产生的声波聚焦并随频率进行角度色散。输出换能器阵列将色散信号频谱分入邻接的窄带内。这种新方法有许多重要的特点。器件是无源线性双向器件,并保持相位信息。旁瓣和假信号可通过将输入换能器单元进行幅度加权及采用模式选择输出换能器来抑制。制成了一些LiNbO_3实验器件,并用扫描激光探针估价了这些实验器件的电性能。     

第二讲 声表面波叉指换能器(二)

三、叉指换能器结构形式 1.色散叉指换能器 色散叉指换能器是不等指宽(或间隔)叉指换能器的通称。前面提到的换能器均是等指宽和等间隔的,也就是声波和电压之间的相位与频率呈线性关系。在色散叉指换能器中,两者呈非线性关系。如果群延迟(相位对频率的一阶导数)与频     

涂覆聚合物膜的Love波传播特性

该文计算了涂覆聚合物膜的 Love 波传感器波速和波导层相对膜厚的关系,并进行了实验验证。Love 波器件以ST-90°X石英晶体为基片,在基片表面镀一层不同膜厚的聚乙烯醇(PVA)膜作为波导层兼吸湿层。采用网络分析仪测量了相对湿度35%左右器件的工作频率和插入损耗分别随膜厚的变化,算出 Love 波波速和 PVA 相对膜厚的关系,当PVA膜厚度从0增大到波长的5%时,Love波速度由约4 992 m/s降低到4 840 m/s,和理论计算结果一致。     

涂覆聚合物膜的Love波传播特性

该文计算了涂覆聚合物膜的Love波传感器波速和波导层相对膜厚的关系,并进行了实验验证。Love波器件以ST-90°X石英晶体为基片,在基片表面镀一层不同膜厚的聚乙烯醇(PVA)膜作为波导层兼吸湿层。采用网络分析仪测量了相对湿度35%左右器件的工作频率和插入损耗分别随膜厚的变化,算出Love波波速和PVA相对膜厚的关系,当PVA膜厚度从0增大到波长的5%时,Love波速度由约4 992m/s降低到4 840m/s,和理论计算结果一致。     

基片开槽抑制SAW滤波器体声波的工艺研究

当叉指换能器在基片上激励声表面波模式时，同时伴随着体声波的激励。文章根据叉指换能器的激励原理，采取对压电基片背面开槽抑制叉指换能器体声波进行了实验研究。分别在ST、LT、LN压电基片上背面开槽并制作了中心频率为28MHz、70MHz、71MHz、120MHz声表面波滤波器。实验观察了体声波的抑制情况，并得出了具体实验数据。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.