一种2 V, 9 μA, 15 × 10-6/℃高电源抑制CMOS带隙电压基准源

通过分析带隙电压基准源的PSR,发现运放的PSR为1时,基准电压将具有很高的PSR。基于该思想,在带隙电压基准源中引入PSR提高电路,实现一种低功耗、低温度系数、高电源抑制能力的带隙电压基准源。该带隙电压基准源采用TSMC0．6μm、两层POLY、两层金属的CMOS工艺实现,芯片面积为0．0528mm^2。测试结果表明：其最大工作电流为9μA;在2～5V工作电压下温度系数为15×10^-8／℃;线调整率为50μV／V;100kHz的PSR为-70dB。仿真与测试结果验证了该方法的有效性。     

一种应用于13.56MHz无源RFID标签芯片的带隙基准电压源

在传统带隙结构基础上,实现了一种适用于13.56MHz无源RFID标签芯片的带隙基准电压源。电路设计采用SMIC 0.18μm混合信号CMOS工艺实现,测试结果显示,电源电压输入范围在4.0~11.0V时,基准源输出电压为1.165±0.004V,7V电源电压、-40~100°C温度范围内,温漂系数为18.3×10-6°C,启动时间为6.8μs。     

一种新型偏置电路的CMOS亚阈型电压基准源

文章设计了一种工作在亚闽值状态下的CMOS电压基准源,分析了MOSFET工作在亚闽区的电压和电流限定条件。电压基准源可提供与工艺基本无关近似零温度系数的基准电压。为了提高电路的电源抑制比,该电路采用了共源共栅电流镜结构。该结构采用了一种新型的偏置电路．使得电流镜各级联管均工作在饱和区边缘而不脱离饱和区,提高输出电压摆幅,得到有较高恒流特性的基准电流。该电路采用0,6μmCMOS工艺,通过Spectra仿真,可工作在2V电压下,输出基准电压1.4V,温度系数为17×10^-6（V／℃）。     

高电源电压抑制比基准电压源的设计

在此通过对带隙基准电压源电路进行建模分析,针对逆变电路的中低频使用环境,设计了一个应用于高压逆变器电路中的高电源电压抑制比,低温度系数的带隙基准电压源。该电路采用1μm,700 V高压CMOS工艺,在5 V供电电压的基础上,采用一阶温度补偿,并通过设计高开环增益共源共栅两级放大器来提高电源电压抑制比,同时使用宽幅镜像电流偏置解决因共源共栅引起的输出摆幅变小的问题。基准电压源正常输出电压为2.394 V,温度系数为8 ppm/℃,中低频电压抑制比均可达到-112 dB。     

一个低压高阶曲率补偿的CMOS带隙基准电压源的设计

运用带隙基准的基本原理,采用0.6μm的CMOS工艺,对一个低压高阶曲率补偿的高性能CMOS带隙基准电压源进行研究,并结合所提出电路给出了高阶曲率补偿的数学表达式。Cadence软件仿真结果显示:电源电压最低可为1.2 V,在-20~100℃温度范围内,输出电压为0.6 V,温度系数为9.1 ppm/℃,即基准输出电压随温度变化不超过±0.1%。低频(f=1 kHz)时PSRR为-78 dB。在室温电源电压为1.2 V时总功耗约为38μW。整个带隙基准电压源具有良好的综合性能。     

一种用于高压PMOSFET驱动器的电压跟随电路

通常PMOSFET栅源电压为-20~20 V,而用于GaN功率放大器的高压PMOSFET驱动器,其工作电压为28~50 V,因此需要一种新型电路结构来保证PMOSFET栅源电压工作在额定范围。设计了一种新型电压跟随电路,采用新型多环路负反馈结构,核心电路主要为电压基准单元、减法器单元、误差放大器单元和采样单元,可产生稳定的跟随电压。该电路具有宽电源电压范围、高输出稳定性以及低温度漂移等特性。基于0.5μm BCD工艺对电路进行流片,测试结果表明,采用该电路的驱动器芯片,其电源电压为15~50 V,输出电压变化量约为0.6 V,在-55~125℃温度范围内,电压漂移量约为0.12 V,满足大多数PMOSFET栅源电压的应用要求。     

应用于A/D转换器中的基准电压源的设计

基准电压源是A／D转换器中非常重要的模块，它的稳定性直接影响着A／D转换器的性能。在TSMC0.18μm/3.3V N-well CMOS工艺条件下，温度系数可达十几个ppm／C。在频率等于100kHz时，PSRR达到54dB，功耗只有0．25mW。     

非带隙低功耗低温漂CMOS电压基准电路设计

通过Vth与VT(热电压)相互补偿原理,提出一种新型非带隙CMOS电压基准源,其输出基准电压具有极低温度系数.采用0.34μmFoundry18工艺模型和Candance Spectre EDA工具对电路进行模拟验证,获得以下结果:输出电压为552.845mV(T=27℃,VDD=3.3V),温度系数为1.98ppm/℃(-30℃℃～+130℃),功耗为21.85μw.电源电压从2.5V变到4.5V,输出电压的变化为0.15％(相对于VDD=3.3V时的输出).该电压基准源可望应用于高精度、低功耗IC系统的设计研发.     

一种高PSR CMOS带隙基准电路设计

为了降低芯片电路功耗,电源电压需要不断的减小,这将导致电源噪声对基准电压产生严重影响。为此针对这一问题进行相关研究,采用SMIC 0.18μm工艺,设计出一种低功耗、低温度系数的高PSR带隙基准电压源。仿真结果表明,该设计带隙基准源的PSR在50 kHz与100 kHz分别为-65.13 dB和-53.85 dB;在2⁶ V电源电压下,工作电流为30μA,温度系数为30.38 ppm/℃,电压调整率为71.47μV/V。该带隙基准适用于在低功耗高PSR性能需求的LDOs电路中应用。     

一种低功耗CMOS带隙基准电压源的实现

运用带隙基准的原理,提出了一种带启动电路的低功耗带隙基准电压源电路。HSPICE仿真结果表明,在25℃3、.3 V下,电路功耗为16.88μW;另外,在-30~125℃范围内,1.9~5.5V下,输出基准电压VREF=1.225±0.0015 V,温度系数为γTC=14.75×10-6/℃,电源电压抑制比(PSRR)为86 dB。该电路采用台积电(TSMC)0.35μm 3.3 V/5 V CMOS工艺制造。测试结果显示,电路功耗仅为16.98μW。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.