基于三维场景的电力设施安全区域预警方法

在电力设施现场作业过程中,需要监控在现场中的工作人员的位置用来对人员目标进行安全预警.本文提出了一种基于三维场景标定技术的电力设施作业现场人员目标安全预警方法,可以对于电力设施监控系统摄到的监控图像视频进行分析.从电力设施作业现场以及监控视频中提取先验标定数据,根据先验标定数据进行数据拟合,完成对电力设施作业现场的三维场景建模,再根据人员目标的识别结果从视频中计算人员目标的实际位置,与预先设定好的安全区域预警参数进行对比,确定当前现场状态.该方法经过现场验证,可以稳定的计算人员目标位置,提出准确安全预警信号.     

基于改进的YOLO v3在电力场景中的人群识别

在电力系统中，人员异常聚集具有较高的危险性，在各类变电站和输电线基站场景中，依靠人工监督惊醒预警效率极低，且滞后性较高，为解决以上问题，提出了以监控摄像头为载体，结合人工智能技术，利用基于改进的YOLO v3目标检测系统对电力系统场景中的人员聚集识别技术。该系统运用多尺度卷积特征融合的方法提升了YOLO v3对小目标检测的性能，再辅以先进的人群识别算法，使得在出现人群聚集行为时可以及时做出判断，避免了可能的危险情况，通过多次实验，获得了具有竞争力的测试结果。     

交通监控系统中车辆和行人的检测与识别分析

在识别以及检测行人以及车辆的过程中主要是将帧间差分结合起来,建立动态交通场景视频图像监控的序列背景模型,之后再借助背景消除法有效检测监控视频中目标的运动状况,将运动目标的轮廓提供出来,最后利用支持向量机,快速识别检测出来的运动目标。研究结果显示,这样的识别和检测的方法更加有助于精确地检测和分类识别,在监控视频中运动的行人以及车辆,自动报警有出现非法入侵的行人。本文探析了在实际的监控交通系统中识别以及检测行人以及车辆的主要状况分析,帧间差分动态更新背景模型的运动目标检测算法,以及基于支持向量机基础之上自动识别行人以及车辆。     

Gabor小波与HOG特征融合的行人识别算法

针对传统HOG特征行人检测方法中,当目标存在遮挡以及面对复杂环境条件下,行人识别存在较高漏检率和误检率的问题,提出一种基于Gabor小波与HOG特征融合(G-HOG)的行人识别算法。利用Gabor小波对样本图像进行特征变换并在尺度和方向上融合,获取Gabor特征图像,利用HOG算子在特征图像上提取目标特征,进行样本分类,获取行人目标的疑似区域;对行人样本进行HOG特征提取与训练,实现对疑似区域的目标识别。实验结果表明,基于G-HOG特征的行人识别算法在INRIA、MIT与Daimler数据库上性能表现良好,能够获取较高的查全率和识别率。     

基于自适应滑动窗的模糊场景行人快速检测

智能场景监控是公共安全领域研究的热点.然而当前公共场所监控视频大都比较模糊,如何能够在模糊场景下快速检测行人目标是一个亟待解决的问题.通过引入一个自适应尺寸的行人检测窗,以特定策略滑动扫描前景二值图像,并根据一系列行人轮廓判别条件获取行人目标,实现了对模糊监控场景的实时行人检测与人数统计.实验结果表明,与传统算法相比,该算法可以有效快速地检测出指定区域内的行人目标.     

基于区域复合概率的行人候选框生成

行人检测在汽车驾驶辅助系统和智能视频监控等领域有广泛的应用,而行人候选框的生成是行人识别、定位及跟踪的一项重要前期工作.本文提出一种基于区域复合概率（Local Mixture Probability,LMP）模型的在线生成行人候选框的方法.该方法根据区域相似性将监控场景划分为多个子区域,随之对各区域内行人的位置和尺度分别建立泊松模型和高斯模型.通过模型的学习与更新可以获取目标出现的概率信息以及目标尺度的分布情况,从而为候选框的生成提供依据,避免遍历搜索的盲目性.实验结果表明,该算法能够在生成较少数目候选框的情况下获得较高的覆盖率.     

基于Haar-like特征多分类器集成的行人检测

Haar-like特征主要用于人脸等目标识别领域,然而因行人流动方向不确定,监控视频拍摄到的行人有正面、侧面和背面三种情况,因此文中提出一种根据三种特征设计的多分类器集成算法。在训练其中一面样本分类器时,将另外两面样本和背景图像作为负样本,从而得到三个分类器,分别检测识别后再筛选统计目标。实验证明该算法具有良好的检测识别效果。     

光传感器监控系统中行人识别模型的研究

针对传统的行人识别模型行人识别速度慢的问题,设计了一种光传感器监控系统中行人识别模型。引入抛物线拟合,将三维场景中的点阵聚合成现实场景中的物体,对监控区域三维重建,在此基础上,采用野点去除和噪声去除的方法去除外界因素对行人目标造成的高频干扰,采集行人区域数据。采用红外图像分割方法,分别对行人目标与背景建模,最后将行人目标模型与背景模型结合生成行人识别模型。实验对比结果表明,此次设计的光传感器监控系统中行人识别模型比传统的图像阈值分割模型、激光雷达行人识别模型、模板匹配行人识别这三种传统模型行人识别速度快,能够满足行人识别需求。     

基于上下文信息的监控场景行人检测方法

为了提高监控场景中行人检测的准确度,提出了一种基于上下文信息的行人检测方法.该方法将监控场景的上下文信息融入到卷积神经网络中,选择性地学习对行人检测有帮助的上下文信息.首先,利用一个截断的卷积神经网络提取输入图像的多张特征图.然后,将多张特征图通过两个包含上下文信息的卷积层,形成一张掩码图.最后,通过在掩码图上估计行人的边界框,获得行人检测的结果.实验表明,该方法能实现监控场景中准确且快速的行人检测.     

图像特征融合的行人重识别方法

行人重识别的目的是在跨区域、跨场景的情况下,检索出特定目标行人.由于行人外观可能相似,以及存在姿态变化和遮挡的问题,因此要求行人重识别模型能够捕捉到足够的细节信息.基于此,提出了图像特征融合的行人重识别算法,融合图像的全局特征与局部特征进行目标行人的检索.该算法构建了特征融合的图像通道,由卷积神经网络提取图像的视觉信息...     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.