基于闪存介质记录仪的设计

为对桌型器件工作状态中的重要性能参数进行全程监测和定量分析，并满足在高冲击等特殊环境下使用的要求，提出了一种基于FPGA以及闪存介质的测试存储系统设计方案。详细阐述了硬件系统各组成模块的电路及其工作原理，给出了各模块连接时相应的时序图，介绍了采集中的编码方法和提高存储速度的方法。在实际工作过程中，记录仪达到了准确、可靠的记录技术要求，记录下的数据为器件的工作状态分析提供了详实的依据。     

基于小波的惯导系统初始对准方法研究

目前远程武器系统广泛采用捷联惯性导航系统,该系统在发射前要经过初始对准。由于惯性导航系统中所采用的陀螺仪和加速度表的噪声很大,影响了初始对准,降低了打击精度,为减小噪声影响,提出了一种基于小波消噪理论的捷联惯性制导系统初始自对准方法。研究显示,小波分解滤波可以显著减小惯性器件的噪声,利用经过消噪的信号进行初始对准,滤波器的收敛速度加快,在相同对准时间内精度有明显提高。     

基于单片机的汽车行驶记录仪的设计

汽车行驶记录仪是对车辆行驶速度、时间、里程等状态信息进行记录、存储和输出的数字式电子记录装置.记录仪的使用,对遏止疲劳驾驶、车辆超速等交通违章行为,保障车辆行驶安全以及对道路交通事故的分析鉴定都具有重要的作用.依照国标GB/T19056-2003的要求,基于C8051F022设计了汽车行驶记录仪,给出了系统的基本组成原理、主要接口电路和软件设计方案.     

一种高集成度GPS记录仪一体机的研究

GPS记录仪一体机是茌标准GPS产品上,集成行车记录仪功能。是对车辆行驶速度、方向、时间、里程以及其他有关车辆行驶的状态信息进行记录、存储并可通过接口实现数据输出的数字式电子记录装置。GPS记录仪一体机内部集成有GPS卫星定位模块和GSM／GPRS通信模块,可以通过运营商的无线网络实时上传定位信息,超速、疲劳、疑点数据以及图片信息等,同时可下发文字信息并语音播报。系统采用了先进的嵌入式硬件与软件体系,能够根据需要方便地进行系统升级。     

基于WindowsCE嵌入式系统的汽车行驶记录仪的研究

汽车行驶记录仪是一种实时收集和记录汽车运行状况的电子设备,在汽车运行中汽车行驶记录仪显示出越来越重要的地位。本文通过对基于WindowsCE嵌入式系统在汽车行驶记录仪中的应用,分析和总结了微处理器、信息储存、信息传输、数据收集等汽车行驶记录仪内部等硬件设计与软件设计的主要步骤。     

基于安卓手机的行车记录仪设计

行车记录仪用来记录汽车的行驶状况,对于交通事故可以作为事故责任判定依据,在日常生活中具非常多的应用场景。当前,除了大型货车,几乎所有汽车都没有配备行车记录仪,额外加装又会影响汽车美观。因此,文章中开发了一种基于Android系统的行车记录仪,可以帮助人们记录汽车的行驶状况。     

基于高速eMMC存储的弹载记录仪设计

弹载记录仪是弹上关键设备,为了可以快速准确地记录弹箭开仓时的加速度及角速度飞行参数,提出一种基于高速eMMC存储的弹载记录仪设计方案。介绍系统的总体硬件架构和软件工作流程,重点研究单块eMMC数据读写的逻辑设计,FPGA与eMMC存储之间的数据传递采用串行的方式进行传输,写入速度为20 MB/s,读出速度为44 MB/s,存储容量为32 GB,实现一种高速读/写、低功耗、集成度高的6通道采集系统。实验表明,这个设计可完整读取到30 000 g的冲击数据。     

基于BD/GPS的北斗记录仪与导航仪的一体化设计

本文介绍了北斗记录仪与导航仪的基本组成、功能,根据车辆监控系统的需求,给出了一种基于BD/GPS的北斗记录仪与导航仪的一体化设计方案,通过采用具有自主知识产权的国产BD/GPS双模定位模块与GPRS通信模块,编写相关软件代码实现车载终端的记录与导航功能,使设计出的车载终端能够在要求较高的场合中运行,最后得到批量应用。     

基于双轴转台的惯性器件自动标定系统研制

基于Acutronic双轴转台，采用GPIB接口卡、HP34401A数字万用表、计算机工作站及VC开发平台等，开发了一套惯性器件自动标定系统。实现了对转台的实时测控，信号采集、数据处理、标定计算、标定报告的显示、打印和存贮的计算机自动完成，并提高了标定精度，为在捷联惯性导航系统中对器件进行系统级修正提供了保障。     

某型器件工作状态记录仪的设计

为对某型器件工作状态中的几个重要参数进行全程监测和定量分析,并满足在高冲击等特殊环境下使用的要求,提出了一种基于CPLD为主控、以Flash为存储器的测试存储系统设计方案.详细阐述了硬件系统各组成模块的电路及其工作原理,给出了相应的程序设计流程图,介绍了采集中的编码方法和提高存储速度的方法.在实地测试过程中,记录仪达到...     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.