探讨4G无线互联网安全接入技术

随着移动客户端设备的发展,随之而来的是移动互联网技术的发展,而现阶段移动互联网所发展到的阶段是4G无线网络时代。现代社会中人们对于移动设备的需求程度日益提升,基于此出现了无线网络的需求市场,进而推动了无线互联网的发展。其在无线互联网的逐渐发展下使用范围迅速扩展,与此同时也提升了对无线网络环境安全性的要求,这便涉及了无线互联网安全接入技术的发展。基于此,文章展开了对4G无线互联网安全接入技术的研究,其中详细讲述了4G无线互联网安全接入技术的理论依据以及其认证方案。     

基于802.1X+portal校园网认证的原理与应用

在校园网接入访问控制的AAA认证之中,特别身份证系统,客户端安全审计,流量控制,设备管理等网络安全,使得Portal认证作成为不可或缺的重要技术之一,文章结合VLAN、802.1x协议架构,采用h3cimc系统服务管理平台,inode认证客户端,实现基于身份,设备相结合共同实现认证收费系统。     

浅析宽带城域网的接入认证技术

对PPPOE、Web／Portal和IEEE802．1X3种宽带城域网的接入认证技术作了初略的描述，并对PPPOE认证和IEEE802．1X协议认证的技术特点作了对比。初步探讨了宽带城域网接入认证技术的发展方向。     

基于手机令牌的动态口令身份认证系统

随着无线网络的日益完善,通过手机无线接入Internet的用户不断增加,因此解决无线接入用户的身份认证问题极为重要。动态12令已经成为认证机制新的发展趋势,它提供了比传统静态口令更高的安全性。文中设计了一种基于挑战／应答机制的动态口令认证协议,并根据此协议设计了一个基于手机令牌的动态口令身份认证系统,论述了系统的组成、认证过程,分析了系统的安全性。分析表明,该系统具有安全性高、适用面广、使用方便、系统成本低的特点。     

一种适合BRAS的Captive Portal方案

随着我国“互联网+”战略的推进,大型宽带网络发展迅速。BRAS设备在宽带网络中得到广泛使用,并通过IPoE方案组网,Portal认证是常用的网络准入解决方案。如何提升Portal系统性能,业界进行了广泛的研究。针对BRAS设备组建的宽带网,文中提出一种使用终端识别+网址判断的二元过滤方案,可有效地进行Portal的前置过滤,从而大幅降低无关的Portal请求,提升Portal认证系统的性能。     

协议组合逻辑安全的4G无线网络接入认证方案

针对4G无线网络中移动终端的接入认证问题,基于自证实公钥系统设计了新的安全接入认证方案,并运用协议演绎系统演示了该方案形成的过程和步骤,用协议组合逻辑对该方案的安全属性进行了形式化证明.通过安全性证明和综合分析,表明该方案具有会话认证性和密钥机密性,能抵御伪基站攻击和重放攻击,并能提供不可否认服务和身份隐私性,同时提高了移动终端的接入效率     

集团部署无线网络的研究

随着公司业务的快速发展,财务、资金、邮件、Portal等系统的不断升级,公司现有网络系统的吞吐性能、安全性和可扩展型,逐渐影响着公司信息化技术的发展.经过充分了解现有的网络特点,通过对集团办公楼进行无线网络覆盖以实现办公高效化、办公移动化、信息安全化.本文就无线网络在集团部署的技术方案进行研究.     

基于SAVI的IPv6接入认证系统设计

为了提高用户接入互联网的安全性,文中设计一款基于SAVI技术的IPv6接入认证系统。该系统基于充分的用户调研和技术分析,在Web认证方法的基础上,引入SAVI源地址验证技术。经实验测试表明,该系统可以抵抗分布式拒绝服务攻击,屏蔽无合法权限和伪造源地址的非法用户访问,进一步提高了新一代移动互联网的安全性防护水平。     

基于统一账号认证的无线接入综合管理平台

通过应用WPA、802．1x／EAP等无线安全技术,与企业内部的统一账号管理平台联动认证,无线接入综合管理系统对接入公司无线办公网络的终端进行身份认证,实现无线接入的认证、授权、监控、审计和统计分析等功能,提升了无线办公网络的安全性。     

提升WiFi用户认证感知度

探讨运营商级别的无线WiFi网络通信认证能力提升。对用户行为进行分析,改造认证逻辑流程,提升系统运行效率,主要从Portal合法性校验、预认证接口过滤引导用户自助服务、使用内存认证方式提升AAA(认证、授权、计费)系统性能、无感知认证技术PEAP(可扩展认证机制)等几个方面提升WiFi用户认证的感知度,为建设智慧城市,方便民生,提高城市服务功能提供有效支撑。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.