DDS技术在高频石英晶体测试系统中的应用

在此介绍了一种以DDS芯片AD9912作为信号源的高频石英晶体测试系统。AD9912是一款直接数字频率合成芯片。一方面,AD9912内部时钟速度可高达1GSPS,并集成了14位数／模转换器,可以直接输出400MHz信号;另一方面,AD9912的频率控制字为48位,可以小于4μHz的分辨率输出信号。由于采用了DDS芯片AD9912作为信号源,所设计的石英晶体测试系统能够在20kHz～400MHz范围内测试石英晶体的串联谐振频率。与国内目前普遍使用的基于振荡器和阻抗计测试方法的测试仪相比,该测试系统具有测试频率范围宽、重复精度高等优点。     

测量夹具电容对石英晶体频率测量的影响

为了提高测量精度,仿真分析了在π网络测量法中,石英晶体测试夹具间电容对串联谐振频率测量的影响,根据石英晶体的电模型及π网络法石英晶体测量系统中π网络的理论模型和实际模型的差异,分析了影响石英晶体谐振频率测量精度的因素,并在此基础上提出了补偿方法。实验结果表明,经过补偿后石英晶体串联谐振频率的测量精度可达到±2×10-6。     

用于石英晶体测试的双通道鉴相系统设计

为提高石英晶体的测试效率,搭建了双独立通道的鉴相系统。该系统采用同一DDS信号源同时激励两个π网络电路,设计了两个独立的鉴相电路,可实现两个通道同时鉴相。该系统采用差频鉴相的方法,使用AD8302作为鉴相器件,在提高鉴相的效率的同时确保了π网络零相位法的检测精度。为验证其可行性,将该系统应用到石英晶体电参数测量系统中。该双独立通道鉴相系统的频率测试范围为1~200 MHz,实验结果表明,鉴相精度达到±1°,满足石英晶体的测试需要。     

基于DDS技术的智能信号源

DDS(Direct Digital Synthesis)是一种新型的数字频率合成技术,该技术具有频率转换快、频率分辨率高等特点,得到了广泛的应用。本系统以单片机8751为控制核心,外接DDS芯片组成了智能化信号源,可以产生DC 100 MHz的高稳定正弦波、方波、三角波调幅波及扫频信号。输出稳定度、精度极高,适用于当代的通信系统和精密的高精度仪器。     

石英谐振器参数的测量

一、序言随着科学技术,特别是电子技术的飞速发展,压电石英谐振器(简称晶体)和晶体滤波器在无线电通讯、导航、载波电话、电视广播、深空跟踪、测量仪器、电力传输、手表工业等方面都获得了广泛的应用。由于通讯信道增多,频率密集,频率和时间计量精度要求越来越高,所以对压电石英谐振器频率精确度,稳定度提出了越来越高的要求,石英谐振器的频率也越来越高。为了更好地检测、分类、正确使用,同时促进石英谐振器及器件的     

相参振荡器频率稳定度及定相精度的测量

对信号源的频率稳定度进行了分析，在此基础上提出了一种同时测量相参振荡器频率稳定度与定相精度的方法。该方法具有结构简单、操作方便的优点，且所需设备少，可达到较高的测量精度。     

体波石英晶体元件的功率消耗

由体波石英晶体元件构成的振荡电路和压控振荡电路谐振元素具有卓越的长期和短期频率稳定度。最早使用体波石英晶体来控制振荡电路频率的历史可以追溯到1919年，当时，卫斯理大学（Wesleyan University）的W．G．Cady教授首先使用了一片石英晶体来控制振荡器的输出频率。     

用于生物阻抗测量的同步多通道高精度恒流源

针对生物电阻抗测量和成像系统的激励源须满足两路以上同步输出、高频率精度、各路相位独立可调、输出为恒流性质等特殊要求,本文分析了多极共用时钟的DDS芯片作为生物电阻抗测量和成像系统激励源的应用优势,设计了以AD9959为核心的用于生物阻抗测量或成像系统的恒流驱动信号源.设计的信号源四通道输出同步,频率精度为0.0058Hz,各通道相位分别可调且最小步长为0.022°,幅值分辨率可达9.8μA,控制方便,电路简单.     

高稳定频率源输出频率的短期稳定度的定义和测量

本文阐述高稳定电磁振荡频率源(原子频率标准及石英振荡器等)输出频率的短期稳定度的各种定义,它们彼此之间的相互关系以及换标方法。介绍目前对短期稳定度进行测量的主要方法及数据处理技术。引言高稳定的电磁振荡频率源(包括各式原子频率标准及高稳定石英振荡器等)在许多尖端科学技术领域中的应用日益广泛,并起着日益重要的作用。对高稳定频率源的主要技术要求,是其输出频率的准确度和稳定度。在许多应用中,由于发射接收系绕可以用同一个频率源来控制,或者可以进行同步统调,故对频率准确度和长期稳定度并不一定要求非常严格;然而对其短期稳定度则往往提出十分严格的要求,因为它对整个工程系统的精确度和分辨力往往起决定性的作用。     

计数式石英温度计

国外介绍了一种新的DY-2801型石英温度计,它能以0.001℃的分辨能力精确地以度数直接测量温度,也可直接测量温差.该仪器应用了固态电路和计数技术,测量温度范围为-40～ 230℃,时间常数小于1秒,稳定度为0.01°/30天,重复性为读数的±0.02%,线性度为读数的士0.05%. 石英温度计的工作原理是基于一个具有线性的频率-温度关系的石英晶体谐振器,电子计数技术的使用使频率能以数字显示,每台仪器有二个对温度敏感的     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.