硅基二氧化硅阵列波导光栅相位误差数值分析

采用传输函数法对硅基二氧化硅阵列波导光栅(AWG)的相位系统误差和随机误差进行了详细的分析.系统误差的模拟结果表明阵列波导的有效折射率和相邻阵列波导长度差ΔL的偏移将会对使中心波长λ0偏离设计值,平板波导有效折射率、阵列波导的间距、罗兰圆聚焦长度R的偏移会使通道间隔偏离设计值.随机误差的模拟结果表明相邻阵列波导长度差、阵列波导中芯区折射率、芯区宽度、芯区厚度的随机波动对AWG的串扰影响较大,而波导上、下包层折射率的波动对AWG串扰影响较小.     

硅基二氧化硅阵列波导光栅相位误差数值分析

采用传输函数法对硅基二氧化硅阵列波导光栅(AWG)的相位系统误差和随机误差进行了详细的分析.系统误差的模拟结果表明阵列波导的有效折射率和相邻阵列波导长度差ΔL的偏移将会对使中心波长λ0偏离设计值,平板波导有效折射率、阵列波导的间距、罗兰圆聚焦长度R的偏移会使通道间隔偏离设计值.随机误差的模拟结果表明相邻阵列波导长度差、阵列波导中芯区折射率、芯区宽度、芯区厚度的随机波动对AWG的串扰影响较大,而波导上、下包层折射率的波动对AWG串扰影响较小.     

硅基二氧化硅阵列波导光栅相位误差数值分析

采用传输函数法对硅基二氧化硅阵列波导光栅(AWG)的相位系统误差和随机误差进行了详细的分析. 系统误差的模拟结果表明阵列波导的有效折射率和相邻阵列波导长度差ΔL的偏移将会对使中心波长λ0偏离设计值，平板波导有效折射率、阵列波导的间距、罗兰圆聚焦长度R的偏移会使通道间隔偏离设计值. 随机误差的模拟结果表明相邻阵列波导长度差、阵列波导中芯区折射率、芯区宽度、芯区厚度的随机波动对AWG的串扰影响较大，而波导上、下包层折射率的波动对AWG串扰影响较小.     

相位误差对AWG波分复用器非相邻通道串扰影响的分析

分析了工艺制作过程中引入的阵列波导相位误差以及由其所引起的非相邻通道间串扰性能的劣化,给出了相应的分析公式.利用该公式,可以简捷地分析所设计的AWG型器件的非相邻通道串扰水平,为优化AWG型器件的设计提供依据.     

相位误差对AWG波分复用器非相邻通道串扰影响的分析

分析了工艺制作过程中引入的阵列波导相位误差以及由其所引起的非相邻通道间串扰性能的劣化,给出了相应的分析公式.利用该公式,可以简捷地分析所设计的AWG型器件的非相邻通道串扰水平,为优化AWG型器件的设计提供依据.     

工艺公差对阵列波导光栅波分复用器性能的影响

依据阵列波导光栅(AWG)的传输理论,分析了工艺公差对硅基聚合物AWG波分复用器性能的影响.分析结果表明,工艺公差将引起AWG传输光谱的漂移,并使串扰增大.为了实现AWG器件正常的解复用功能,我们对AWG工艺公差的累积和补偿效应进行了讨论.     

工艺公差对阵列波导光栅波分复用器性能的影响

依据阵列波导光栅(AWG)的传输理论,分析了工艺公差对硅基聚合物AWG波分复用器性能的影响.分析结果表明,工艺公差将引起AWG传输光谱的漂移,并使串扰增大.为了实现AWG器件正常的解复用功能,我们对AWG工艺公差的累积和补偿效应进行了讨论.     

作波分复用AWG同频串扰的相关特性及理论研究

本文讨论了光信号在阵列波导光栅（AWG）中同频光电流串扰的自相关函数,从理论上探讨了同频串扰的自相关系数,研究了相关系数与同频串扰引起延时的关系,及同频串扰噪声功率和串扰的极化方向的关系,得到了相关系数R_F与AWG延时时间τ、记录值n之间的关系曲线.数值计算表明:串扰延时使AWG的传输信号存在负相关、弱相关、正相关,其串扰延时对记录长度的影响呈周期性变化.     

基于SOI材料的阵列波导光栅的制作

采用ICP刻蚀的方法,在SOI材料上制作出了中心波长为 1. 5509μm、信道间隔为 200GHz的 5×5阵列波导光栅(AWG).测试中心波长与设计值相差 0. 28nm,测试波长间隔与设计值相差在 0. 02nm之内,相邻信道串扰接近10dB,信道插入损耗均匀性为 0. 7dB,测试结果表明该器件能够初步达到分波功能.     

一种降低列阵波导光栅相邻信道串扰的方法

阵列波导光栅 (AWG)作为波长滤波器在光通信领域具有很大的应用前景。串扰是影响阵列波导光栅应用的重要因素之一。为了降低阵列波导光栅相邻信道的串扰 ,本文提出并研究了一种降低阵列波导光栅的新方法。该方法利用阵列波导光栅的衍射特点性 ,通过调节阵列波导光栅的自由光谱范围 (FSR)、罗兰圆焦距和阵列波导数目 ,使得各信道信号的输出极小值处于其它信道输出波导中心 ,无次极大处于其它波导中 ,从而降低了阵列波导光栅的串扰 ,特别是相邻信道之间的串扰。通过光束传播方法 (BPM)的模拟了具有不同FSR的 1× 16阵列波导光栅 ,结果显示 ,该方法能将相邻信道之间的串扰降低约 5 .7dB。     

An Analytic Approach to Random Phase Error and Its Impact on the Performance and Design of Arrayed-Waveguide Gratings

Random phase error due to fabrication process causes the filter response of arrayed-waveguide grating (AWG) to degrade, especially in terms of crosstalk. In the side-lobe region, which is critical to the channel crosstalk performance, each instantiation of the random phase error can yield a significantly different filter transmission than that of the average for that level of phase error. In this report, the statistical behavior of the AWG filter transmission in the side-lobe region is studied analytically. Both the distribution of random side-lobe level at a given wavelength and an upper bound of the outage probability for side-lobe maxima are given in a simple closed form. Accordingly, a crosstalk margin needs to be allocated to ensure a given fabrication yield and this is shown to depend on the fractional bandwidth of the AWG filter. For filter shapes that are close to Gaussian, this crosstalk margin can be 8 dB or more above the average crosstalk level, for small fractional bandwidth of about 1% and fabrication yields of 80% or higher. These relations should be useful to AWG designers particularly when the underlying fabrication process is susceptible to nonnegligible random phase errors.     

工艺误差对AWG串扰特性的影响

分析了阵列波导光栅器件的制作过程中引入的各种工艺误差。对波导尺寸误差、折射率误差以及长度误差进行了等效,并计算了位相误差和振幅误差的方差。最后分析了位相误差和振幅误差对阵列波导光栅的频谱特性尤其是相邻通道间的串扰特性的影响。     

The role of photomask resolution on the performance ofarrayed-waveguide grating devices

The crosstalk performance of an arrayed-waveguide grating (AWG) multiplexer or demultiplexer is primarily caused by random optical phase errors introduced in the arrayed waveguides. Because the layout of waveguides on a wafer is patterned via photomask through the photolithography process, the resolution of a photomask has a direct influence on the phase errors of an AWG. The paper presents a theoretical analysis on the phase error caused by photomask resolution and other basic design parameters. Both calculation and measurement results show that a high-resolution photomask (better than 25 nm) is a critical requirement to produce low-crosstalk (less than -30 dB) AWG demultiplexers. We also investigate the effect of nonideal power distribution in the arrayed waveguides because it contributes considerable phase errors when material impurity is not well controlled during wafer fabrication. Basic criteria of power profile truncation, number of grating waveguides, and material index variation are also summarized     

Measurement of phase and amplitude error distributions in InP-basedarrayed-waveguide grating multi/demultiplexers

The authors have measured the phase and amplitude error distributions in an InP-based arrayed-waveguide grating (AWG) multi/demultiplexer using Fourier transform spectroscopy and signal data processing. The signal data processing technique was based on wavenumber scale transformation and was applied to reduce the effect of second-order dispersion in a measured interferogram. The results reveal that the main origins of the crosstalk and dispersion in an InP-based AWG are random and slowly-varying phase errors, respectively     

氟化聚合物光谱响应平坦化阵列波导光栅的优化设计和制备

本文基于阵列波导光栅(AWG)的传输理论,利用含氟聚合物(PFS-co-GMA)共聚物材料,对17×17信道光谱响应平坦化AWG波分复用器进行了参数优化.由于在聚合物阵列波导光栅器件的制备过程中,选用了反应离子刻蚀(RIE)工艺和蒸汽回溶技术,形成的梯形截面波导芯,使AWG传输的光产生相位移,导致传输光谱移动,引起串扰...     

Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides

A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of ?13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon-on-insulator (SOI) substrate. This work has been supported by the National Key Research and Development Program of China (No.2016YFB0402504), and the National Natural Science Foundation of China (Nos.61435013 and 61405188). E-mail:zhangjiashun@semi.ac.cn      

基于SOI的16通道200GHz阵列波导光栅

设计并制作了基于绝缘体上硅(SOI)材料的1×16阵列波导光栅(AWG).该AWG器件的中心波长为1 550 nm,信道间隔为200 GHz,采用了脊型波导结构.首先确定了波导的结构尺寸以保证单模传输,并利用束传播法(BPM)模拟了波导间隔、弯曲半径和锥形波导长度等参数对器件性能的影响,对器件结构进行了优化,同时也利用BPM方法模拟了器件的传输谱.模拟结果显示:器件的最小信道损耗为4.64 dB,串扰小于-30 dB.根据优化的器件结构,通过光刻等半导体工艺制作了AWG,经测试得到AWG器件的损耗为4.52～8.1 dB,串扰为17～20 dB,能够实现良好的波分复用/解复用功能.     

17×17 硅基聚合物信道箱形光谱阵列波导光栅的制备

Arrayed waveguide grating (AWG) is a key device in wavelength-division multiplexing (WDM) system, and the flat spectral response of the AWG device is required. In this paper, the RIE process has been improved. By using the steam- redissolution technique, the insertion loss and the crosstalk have been reduced. Experimental results show that the central wavelength is 1550.86nm, and 3-dB bandwidth is about 0.478 nm, insertion loss is 10.5 dB, crosstalk is about –22 dB. The insertion loss of an AWG device is reduced by about 3 dB for the central channel and 4.5 dB for the edge channels, and the crosstalk is reduced by 2.5 dB after the steam- redissolution.     

Fabrication of 17 × 17 polymer/Si arrayed waveguide grating with flat spectral response using steam-redissolution technique

Arrayed waveguide grating (AWG) is a key device in the wavelength-division multiplexing (WDM) system, and the flat spectral response of the AWG device is required. In this paper, the RIE process has been improved. By using the steam-redissolution technique, the insertion loss and the crosstalk have been reduced. Experimental results show that the central wavelength is 1550.86 nm, the channel spectral response flatness is about 1.5 dB, 3-dB bandwidth is about 0.478 nm, insertion loss is 10.5 dB, and crosstalk is about-22 dB. The insertion loss of an AWG device is reduced by about 3 dB for the central channel and 4.5 dB for the edge channels, and the crosstalk is reduced by 2.5 dB after the steam- redissolution.