基于硅纳米线波导的16通道200GHz阵列波导光栅

设计了基于硅纳米线波导的16通道,通道间隔为200GHz的阵列波导光栅(AWG)。传输函数法模拟了器件传输谱,结果表明器件的通道间隔为1.6nm,通道间串扰为31dB。器件利用SOI材料,由193nm深紫外光刻工艺制备。光谱测试结果分析表明,通道串扰为5-8dB,中心通道损耗2.2dB,自由光谱区长度24.7nm,平均信道间隔1.475nm。详细分析了器件谱线畸变的原因。     

SOI基PLC型阵列波导光栅与可调光衰减器单片集成

制作了基于绝缘体上硅(Silicon on Insulator,SOI)材料的8×16通道的阵列波导光栅(Arrayed Waveguide Grating,AWG)与电吸收型可调光衰减器(Variable OpticalAttenuator,VOA)的单片集成器件,其信道间隔为200 GHz.该集成器件采用脊形波导结构,其截面尺寸为亚微米级,整体尺寸为2.9 mm×1 mm.该VMUX器件的片上损耗为9.324～10.048 dB,串扰为6.5～8.2 dB;在20 dB衰减下,单通道最大功耗为87.98 mW;最大信道偏振相关损耗(Polarization Dependent Loss,PDL)为0.461 dB,16通道的衰减一致性为0.245 dB.该器件能够实现良好的波分复用/解复用及信道功率均衡的功能.     

8通道-1.6nm Si纳米线阵列波导光栅的设计与制作

设计了基于绝缘层上硅(SOI)材料的8通道Si纳米线阵列波导光栅(AWG),器件的通道间隔为1.6nm,面积为420μm×130μm。利用传输函数法模拟了器件传输谱,结果表明,器件的通道间隔为1.6nm,通道间串扰为17dB。给出了结合电子束光刻(EBL)和感应耦合等离子(ICP)刻蚀技术制备器件的详细流程。光谱测试结果分析表明,器件通道间隔为1.3～1.6nm,通道串扰为3dB,中心通道损耗为11.6dB。     

Optimization of 16×0.8 nm Si-based SiO_2 Arrayed Waveguide Grating

对设计的折射率差为0.75%的16×0.8nm硅基二氧化硅阵列波导光栅(AWG),围绕插损和串扰问题,采用广角有限差分束传播方法(FD BPM)进行了数值模拟和优化。通过优化在输入波导、阵列波导的喇叭口,得到了插损为1.5dB、串扰为-48dB的AWG,优化后的指标已达到商用要求。     

低损耗高集成度氮化硅阵列波导光栅波分(解)复用器

氮化硅平台阵列波导光栅(AWG)波分(解)复用器具有损耗低、集成度高、温度敏感性低等优势。基于联合微电子中心有限责任公司(CUMEC)的氮化硅集成光子工艺平台,从波导传输损耗、阵列波导与平板波导模式转换损耗、截断损耗、泄漏损耗等方面对氮化硅基AWG波光(解)复用器插入损耗进行了优化,并采用标准CMOS工艺完成低损耗C波段AWG密集波分(解)复用器制备。该氮化硅基AWG密集波分(解)复用器输出通道数为16,输出通道频率间隔200 GHz。测试结果表明,该AWG波分(解)复用器的平均插入损耗为2.34 dB,1 dB带宽为0.44 nm,3 dB带宽为0.76 nm,串扰约为-28 dB。芯片尺寸为850μm×1700μm,较平面光波导(PLC)基AWG大大减小。     

40通道100G间隔AWG的研制

本文利用BPM算法设计了40通道100G间隔的AWG,并利用PLC标准工艺制作了AWG器件.该器件的插入损耗为4 dB,相邻通道串扰为30 dB,非相邻通道串扰为38 dB,1 dB带宽为0.26 nm,实现了预先设计的目标.     

Si纳米线阵列波导光栅制备

采用绝缘层上Si(SOI)材料设计制备了3×5纳米线阵列波导光栅(AWG),器件大小为110μm×100μm。利用简单传输法模拟了器件的传输谱,并采用二维时域有限差分(FDTD)模拟中心通道输出光场的稳态分布,模拟结果表明,器件的通道间隔为11 nm,通道间的串扰为18 dB。通过电子束曝光(EBL)和感应耦合等离子(ICP)刻蚀制备了所设计的器件,光输出谱测试分析表明,器件中心通道的片上损耗为9 dB,通道间隔为8.36～10.40 nm,中心输出通道的串扰为6 dB。在误差允许范围内,设计和测试的结果一致。     

一种降低列阵波导光栅相邻信道串扰的方法

阵列波导光栅 (AWG)作为波长滤波器在光通信领域具有很大的应用前景。串扰是影响阵列波导光栅应用的重要因素之一。为了降低阵列波导光栅相邻信道的串扰 ,本文提出并研究了一种降低阵列波导光栅的新方法。该方法利用阵列波导光栅的衍射特点性 ,通过调节阵列波导光栅的自由光谱范围 (FSR)、罗兰圆焦距和阵列波导数目 ,使得各信道信号的输出极小值处于其它信道输出波导中心 ,无次极大处于其它波导中 ,从而降低了阵列波导光栅的串扰 ,特别是相邻信道之间的串扰。通过光束传播方法 (BPM)的模拟了具有不同FSR的 1× 16阵列波导光栅 ,结果显示 ,该方法能将相邻信道之间的串扰降低约 5 .7dB。     

基于Interleave和微谐振环的32信道波分复用器特性

对结合interleave滤波器的1×32信道垂直耦合双环谐振波分复用器件的传输特性进行了研究,得到了器件的光学传递函数公式,对器件的参数、光谱响应、分波光谱、插入损耗以及信道间的串扰进行了数值模拟和优化.分析结果表明,通过在微环谐振波分复用器件的前端增加interleave滤波器,使信道间的串扰降低了14 dB,并且改善了器件的输出光谱形状,提高了器件的信道复用密度;同时,由于采用了在同一基片上集成,保证了器件的低插入损耗.通过参数优化,得到了中心波长为1 550 nm、波长间隔为0.4 nm、3 dB带宽为0.21 nm、插入损耗低于1.1 dB和串扰低于-32 dB的32信道密集波分复用器(DWDM).     

氟化聚合物光谱响应平坦化阵列波导光栅的优化设计和制备

本文基于阵列波导光栅(AWG)的传输理论,利用含氟聚合物(PFS-co-GMA)共聚物材料,对17×17信道光谱响应平坦化AWG波分复用器进行了参数优化.由于在聚合物阵列波导光栅器件的制备过程中,选用了反应离子刻蚀(RIE)工艺和蒸汽回溶技术,形成的梯形截面波导芯,使AWG传输的光产生相位移,导致传输光谱移动,引起串扰...     

Flat-top silica-based arrayed waveguide grating with 40-channels

A wavelength multiplexer or demultiplexer plays ani mportant role in all wavelength division multiplexing( WDM) system.Silica-basedarrayed waveguide gratings(AWGs) offer attractive featuresinthis area due to theadvantage of large output channels and lowlo…     

A 45-channel 100 GHz AWG based on Si nanowire waveguides

A 45-channel 100 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about ?23 dB. The device is fabricated on silicon-on-insulator (SOI) substrate by deep ultraviolet lithography (DUV) and inductively coupled plasma (ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of ?8 dB. This work has been supported by the National High Technology Research and Development Program of China (No.2015AA016902), and the National Natural Science Foundation of China (Nos.61435013 and 61405188). E-mail:zhangjiashun@semi.ac.cn      

Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides

A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of ?13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon-on-insulator (SOI) substrate. This work has been supported by the National Key Research and Development Program of China (No.2016YFB0402504), and the National Natural Science Foundation of China (Nos.61435013 and 61405188). E-mail:zhangjiashun@semi.ac.cn      

17×17信道光谱响应平坦化的聚合物阵列波导光栅的研制

选用氟化聚芳醚FPE聚合物材料,设计并制备出了17×17信道光谱响应平坦化阵列波导光栅（AWG）波分复用器. 实验测试结果表明,器件的中心波长为1550.83nm,波长间隔为0.8nm, 3dB带宽约为0.476nm,插入损耗为13~15dB,串扰低于-21dB.     

用于FBG解调的AWG芯片的设计、仿真与制备

设计、仿真并制备了一种用于光纤布拉格光栅(FBG)解调的阵列波导光栅(AWG)芯片。该芯片基于SOI衬底进行制备,并在AWG的输入/输出波导、阵列波导与平板波导之间采用双刻蚀结构进行优化。经仿真,该AWG的插入损耗为1.5dB,串扰小于 -20dB,3dB带宽为1.5nm。优化后的AWG芯片采用深紫外光刻技术、电感耦合等离子体等技术制备。经测试,该AWG的插入损耗为3dB,串扰小于 -20dB,3dB带宽为2.3nm。搭建了基于该AWG的解调系统,解调实验结果表明,该系统在0.8nm范围内的解调精度可达11.26pm,波长分辨率为6pm。     

用于单片集成的InP阵列波导光栅设计和制备

InP 阵列波导光栅(AWG)是InP 基单片多波长转换器中的重要单元。采用深脊型波导结构,设计了一种10通道、通道间隔200GHZ(1.6nm)的偏振无关型InP基阵列波导光栅。采用外延技术、光刻、感应耦合等离子体刻蚀技术等在实验室制造出了这种AWG。经过测试,插入损耗约为-8dB,串扰小于-17dB,中心通道和旁边通道的通道均匀性基本上在3dB左右。     

Fabrication of 17 × 17 polymer/Si arrayed waveguide grating with flat spectral response using steam-redissolution technique

Arrayed waveguide grating (AWG) is a key device in the wavelength-division multiplexing (WDM) system, and the flat spectral response of the AWG device is required. In this paper, the RIE process has been improved. By using the steam-redissolution technique, the insertion loss and the crosstalk have been reduced. Experimental results show that the central wavelength is 1550.86 nm, the channel spectral response flatness is about 1.5 dB, 3-dB bandwidth is about 0.478 nm, insertion loss is 10.5 dB, and crosstalk is about-22 dB. The insertion loss of an AWG device is reduced by about 3 dB for the central channel and 4.5 dB for the edge channels, and the crosstalk is reduced by 2.5 dB after the steam- redissolution.     

17×17 硅基聚合物信道箱形光谱阵列波导光栅的制备

Arrayed waveguide grating (AWG) is a key device in wavelength-division multiplexing (WDM) system, and the flat spectral response of the AWG device is required. In this paper, the RIE process has been improved. By using the steam- redissolution technique, the insertion loss and the crosstalk have been reduced. Experimental results show that the central wavelength is 1550.86nm, and 3-dB bandwidth is about 0.478 nm, insertion loss is 10.5 dB, crosstalk is about –22 dB. The insertion loss of an AWG device is reduced by about 3 dB for the central channel and 4.5 dB for the edge channels, and the crosstalk is reduced by 2.5 dB after the steam- redissolution.