硅基二氧化硅阵列波导光栅相位误差数值分析

采用传输函数法对硅基二氧化硅阵列波导光栅(AWG)的相位系统误差和随机误差进行了详细的分析.系统误差的模拟结果表明阵列波导的有效折射率和相邻阵列波导长度差ΔL的偏移将会对使中心波长λ0偏离设计值,平板波导有效折射率、阵列波导的间距、罗兰圆聚焦长度R的偏移会使通道间隔偏离设计值.随机误差的模拟结果表明相邻阵列波导长度差、阵列波导中芯区折射率、芯区宽度、芯区厚度的随机波动对AWG的串扰影响较大,而波导上、下包层折射率的波动对AWG串扰影响较小.     

硅基二氧化硅阵列波导光栅相位误差数值分析

采用传输函数法对硅基二氧化硅阵列波导光栅(AWG)的相位系统误差和随机误差进行了详细的分析.系统误差的模拟结果表明阵列波导的有效折射率和相邻阵列波导长度差ΔL的偏移将会对使中心波长λ0偏离设计值,平板波导有效折射率、阵列波导的间距、罗兰圆聚焦长度R的偏移会使通道间隔偏离设计值.随机误差的模拟结果表明相邻阵列波导长度差、阵列波导中芯区折射率、芯区宽度、芯区厚度的随机波动对AWG的串扰影响较大,而波导上、下包层折射率的波动对AWG串扰影响较小.     

聚合物阵列波导光栅波分复用器带宽平坦化分析

提出了一种阵列波导光栅(AWG)波分复用器带宽平坦化的有效方法。在常规型阵列波导器件中,把相邻奇数阵列波导长度差减少增量,并把相邻偶数阵列波导长度差增加相同的增量,即可获得平坦的箱形波谱响应。对17×17信道聚合物AWG波分复用器的模拟结果表明,箱形波谱响应的3 dB带宽约为0.49 nm,每条输出信道的串扰皆低于-28 dB。     

16×0.8nm硅基二氧化硅AWG性能优化

对设计的折射率差为0.75%的16×0.8 nm硅基二氧化硅阵列波导光栅(AWG),围绕插损和串扰问题,采用广角有限差分束传播方法(FD-BPM)进行了数值模拟和优化.通过优化在输入波导、阵列波导的喇叭口,得到了插损为1.5 dB、串扰为-48 dB的AWG,优化后的指标已达到商用要求.     

Optimization of 16×0.8 nm Si-based SiO_2 Arrayed Waveguide Grating

对设计的折射率差为0.75%的16×0.8nm硅基二氧化硅阵列波导光栅(AWG),围绕插损和串扰问题,采用广角有限差分束传播方法(FD BPM)进行了数值模拟和优化。通过优化在输入波导、阵列波导的喇叭口,得到了插损为1.5dB、串扰为-48dB的AWG,优化后的指标已达到商用要求。     

顶部平坦化32通道AWG的设计与研制

根据优化输入端多模干涉器(MMI)结构设计,研制出32通道50 GHz通道间隔、顶部平坦化的阵列波导光栅(AWG)器件。该器件的采用6μm×6μm折射率差为0.75%的Si基SiO2埋型波导结构,阵列波导数为130,罗兰圆半径为9 419.72μm,相邻阵列波导长度差为128.42μm。测试结果表明:AWG器件插入损耗(IS)为-5~-8.5 dB,串扰>-25 dB,3 dB带宽>0.25 nm。     

SiON对Si基SiO2 AWG偏振补偿的数值分析

采用全矢量交替方向隐含迭代方法系统分析了高折射率SiON薄膜对Si基SiO2阵列波导光栅中波导应力双折射的影响.分析结果表明在芯区上或下表面沉积SiON薄膜可以明显减小Si基SiO2阵列波导光栅(AWG)中波导的应力双折射,但这两种补偿方法容易使模场偏移中心位置,不利于波导与光纤的耦合.理想的补偿方法是在芯区上下同时补偿,可减小模场偏移,并用该方法设计了偏振无关的16通道AWG.     

SiON对Si基SiO_2AWG偏振补偿的数值分析

采用全矢量交替方向隐含迭代方法系统分析了高折射率 Si ON薄膜对 Si基 Si O2 阵列波导光栅中波导应力双折射的影响 .分析结果表明在芯区上或下表面沉积 Si ON薄膜可以明显减小 Si基 Si O2 阵列波导光栅 (AWG)中波导的应力双折射 ,但这两种补偿方法容易使模场偏移中心位置 ,不利于波导与光纤的耦合 .理想的补偿方法是在芯区上下同时补偿 ,可减小模场偏移 ,并用该方法设计了偏振无关的 1 6通道 AWG.     

SiON对Si基SiO2 AWG偏振补偿的数值分析

采用全矢量交替方向隐含迭代方法系统分析了高折射率SiON薄膜对Si基SiO2阵列波导光栅中波导应力双折射的影响.分析结果表明在芯区上或下表面沉积SiON薄膜可以明显减小Si基SiO2阵列波导光栅(AWG)中波导的应力双折射,但这两种补偿方法容易使模场偏移中心位置,不利于波导与光纤的耦合.理想的补偿方法是在芯区上下同时补偿,可减小模场偏移,并用该方法设计了偏振无关的16通道AWG.     

相位误差对AWG波分复用器非相邻通道串扰影响的分析

分析了工艺制作过程中引入的阵列波导相位误差以及由其所引起的非相邻通道间串扰性能的劣化,给出了相应的分析公式.利用该公式,可以简捷地分析所设计的AWG型器件的非相邻通道串扰水平,为优化AWG型器件的设计提供依据.     

Design and fabrication of ultrasmall arrayed waveguide grating multiplexers based on Si nanowire waveguides

In the past decades, integrated optical devices based on planar lightwave circuits (PLCs) have been developed rap- idly and used in various areas, such as optical communications, optical sensing and, etc. Because of their excellent performances and the feasibility for massive productions, PLC-based integrated optical devices may take the place of discrete devices more and more in the future. In order to satisfy the increasing demands of the optical net- works with a large capacity and high s…     

Crosstalk Reduction in a Shallow-Etched Silicon Nanowire AWG

We introduced shallow-etched silicon nanowire into the arrayed waveguides to decrease the random phase error due to the core width fluctuation. A fairly improved crosstalk value of 18 dB was achieved in the fabricated arrayed-waveguide grating with the on-chip loss of 3 dB.      

The role of photomask resolution on the performance ofarrayed-waveguide grating devices

The crosstalk performance of an arrayed-waveguide grating (AWG) multiplexer or demultiplexer is primarily caused by random optical phase errors introduced in the arrayed waveguides. Because the layout of waveguides on a wafer is patterned via photomask through the photolithography process, the resolution of a photomask has a direct influence on the phase errors of an AWG. The paper presents a theoretical analysis on the phase error caused by photomask resolution and other basic design parameters. Both calculation and measurement results show that a high-resolution photomask (better than 25 nm) is a critical requirement to produce low-crosstalk (less than -30 dB) AWG demultiplexers. We also investigate the effect of nonideal power distribution in the arrayed waveguides because it contributes considerable phase errors when material impurity is not well controlled during wafer fabrication. Basic criteria of power profile truncation, number of grating waveguides, and material index variation are also summarized     

玻璃波导有效折射率的原位测量（特邀）

飞秒激光直写玻璃波导是快速制备三维集成光子芯片的一种重要手段,波导有效折射率的准确测量对于设计光子器件意义重大。设计并制备了一种断臂马赫-曾德尔干涉仪（MZI）结构对玻璃波导有效折射率进行原位精密测量。激光在断线区域和波导内的有效折射率不同,在传输相同长度下产生一定的相位差,最终导致不同的干涉结果。对断臂MZI结构的相位干涉结果进行处理,得到激光直写玻璃波导的有效折射率为1.504+7.7×10?4。利用RSOFT软件光束传播算法对器件进行模拟仿真,仿真结果与实验吻合良好。该精确测量玻璃波导有效折射率的方法对于提升光子芯片设计与制造能力具有重要意义。     

Estimation of waveguide phase error in silica-based waveguides

A new estimation method is proposed in order to clarify waveguide phase error factors. Using the proposed method, it is possible to analyze such factors as core size error and refractive index error, which cause optical phase error in waveguides. This method is applied to silica-based waveguides to estimate the waveguide phase error. This revealed an average core size error of 2.1×10^-3 μm and an average refractive index error of 1.9×10^-6. Finally, based on the measured phase error values, the optimum arrayed-waveguide grating (AWG) configuration is considered with a view to achieving low crosstalk     

Effects of the Film Index on the Fields of Nonlinear-Cladding Optical Waveguides With Butt-Coupled Linear Waveguides

Effects of the film index of nonlinear-cladding optical waveguides on the evolution of fields at medium power levels are investigated numerically. The analysis method is based on mode matching of local normal modes of bounded waveguides. For waveguides with a film whose refractive index is greater than or nearly equal to the linear part of the index of the nonlinear cladding, the path of a beam winds between the film and the nonlinear cladding or in the film. In the case of a film index that is to some extent less than the linear part index of the nonlinear cladding, a beam is emitted to the nonlinear cladding, i.e., spatial soliton emission occurs. The lateral shift of a butt-coupled linear waveguide toward the substrate makes a beam emit to the nonlinear cladding with increased angles. Saturation and linear absorption weakens the winding of a path or decreases the angle of emission.     

Analysis of Optical Singal Transmission Characteristics in AWG Multi/Demultiplexer with Electromagnetic Field Theory

Based on the electromagnetic field theory,the optical signal transmission characteristics in input/output waveguides,slab waveguides and arrayed waveguides of the arrayed waveguide grating(AWG) multi/demultiplexer are analyzed.The relationship between the physical parameters such as geometry sizes and relative refractive index in AWG multi/demultiplexer and the optical signal transmission characteristics are discussed.This theoretical study can be used for optimizing the design and improving the performance of the AWG multi/demultiplexer.     

Analysis of Optical Signal Transmission Characteristics in AWG Multi/Demultiplexer with Electromagnetic Field Theory

Based on the electromagnetic field theory, the optical signal transmission characteristics in input/output waveguides, slab waveguides and arrayed waveguides of the arrayed waveguide grating (AWG) multi/demultiplexer are analyzed. The relationship between the physical parameters such as geometry sizes and relative refractive index in AWG multi/demultiplexer and the optical signal transmission characteristics are discussed. This theoretical study can be used for optimizing the design and improving the performance of the AWG multi/demultiplexer.     

用于光互连的聚硅氧烷脊型光波导研究

采用软成型和图案转移技术,制备了可用于高速芯片间光互连的大尺寸聚硅氧烷脊型光波导,光波导长度达23cm.利用有效折射率法,对芯层残留层和传输模场的关系进行了分析.采用截断和数字化散射两种方法,测得输入光波长为633nm时的平均传输损耗小于0.14dB/cm.研究结果表明,波导的长度和损耗指标满足高速芯片间光互连的要求.     

缓冲质子源LiNbO3波导折射率计算及实验

为实现铌酸锂退火质子交换(APE)波导折射率分布的准确计算,选择含苯甲酸锂的苯甲酸缓冲液作为质子交换质子源,高温退火制作了波导样本.针对该工艺过程建立退火质子交换波导模型,包括非线性扩散模块和光学数值仿真模块,分别计算APE波导折射率及其模式有效折射率.以测得的样本波导模式有效折射率和计算的有效折射率差的均方根构建评价函数(FOM),结合遗传算法提取该工艺条件下质子扩散参数,实现了不同交换深度和退火时间波导折射率分布及其光学特性的一体化计算.实验表明:FOM小于0.001,计算折射率分布同IWKB方法测得结果吻合较好,最大偏差约0.002.