基于EMV非接通信规范的非接触读卡器设计

本文针对最新版的EMV非接通信规范(Ver.2.6),对非接触读卡器的设计重点和难点进行分析,针对技术点给出相应的解决方法,提出面积对比法来进行天线的最优设计。针对检测的实际环境给出有效的设计调试方法,通过调整信号引出点的方法消除检测和应用中存在的对读卡器接收信号的大扰动。     

Kaleido—X16多画面分割器

Miranda公司的Kaleido—Xl6多画面分割器产品。采用超级静音和3D设计,是中心机房控制、车载控制等应用方面的理想选择。KX-16专为3G／3D视频设计．3Gb／s信号可以支持3D显示模式（SMPTE-425M Level A＆B）,支持并且自动识别多达16路的3G／HD／SD／Analog等视频信号。同时,它也支持DVI和MPEG视频输入,     

基于DS8113芯片的IC卡接口设计

DS8113是美信公司专用于Smart Card(IC卡)的接口芯片,适用于需要满足ISO7816、EMV要求的IC卡读写机具、银行POS终端、消费类机顶盒等。文章介绍了DS8113芯片的特性,详细阐述了针对EMV要求采用DS8113芯片设计IC卡接口电路及设计的注意要点。     

基于ADIS16300的汽车方向盘自由转动量测量系统设计

汽车方向盘自由转动量是车辆安全运行的重要技术条件。针对常规检测设备体积大安装不便的不足,文中设计了基于Analog Device公司MEMS惯性传感器ADIS16300的方向盘转动量测量系统。阐述了ADIS16300传感器进行方向盘转动量测量的原理,采用STM公司生产的cortex-M3微处理器设计了测量电路,并进行了实验测试。在与ZL-1L型转向参数测试仪进行比较分析,表明本文设计的倾角测量系统在汽车静态情况下可以准确地测量方向盘自由转动量。     

EMV96的潜在缺陷和改进意见

EMV96是Europay、MasterCard、Visa提出的目前具有代表性的IC卡交易规范.相当多的IC卡交易系统和规范都建立EMV96的基础之上.本文系统地分析了EMV96的交易协议中的安全机制,得出EMV96用以实现应用的一些重要安全性假设;进一步分析表明:EMV96的一些假设使得EMV96不能很好地满足交易的四个条件,在不改变交易流程的前提下,针对EMV96的潜在缺陷,提出相应的改进意见.     

快速触发器设计重点剖析

IC设计内含语言级(Language Level)、门级(Gate Level)及晶体管级(Transistor Level)三种电路设计层次.电路的数字合成(Digital Synthesizing)产生物理电路所需要的输出格式,以及选择生产制造的工艺、厂商等.本文延续前两期杂志的主题,进一步剖析功能电路在门级的实际电路设计,针对快速数据触发器与快速转态触发器的设计进行详细说明.     

一种多倍频选择的高倍频锁相环频率合成器

文章描述了一个基准频率为32 768 Hz的锁相环频率合成器的设计.该频率合成器有1250、1 500、2 000、2 500、3 000等5个倍频选择.电路设计基于1st Silicon 2.5 V 0.25 μm CMOS工艺.Cadence Artist Analog仿真显示,该电路可以实现快速锁定,且具有较小的相位抖动.文章研究和总结了频率合成器系统参数的设计理论,对其各个子电路进行了结构优化,并且按MPW流片要求,进行了版图的布局设计.     

SoC设计语言：SystemC

应用的需求和集成电路工艺的发展促进了复杂的片上系统(SoC)的实现，同时也要求新的设计方法以支持复杂SoC的设计。高效率的软硬件联合设计需要对整个SoC进行更高层次(例如Transaction Level)的抽象以提供更快的仿真速度及更高效率的SoC设计验证方法。本文介绍了一种重要的SoC设计语言：SystemC，以及基于SystemC的Transaction Level模型和使用Transaction Level模型进行SoC的软硬件联合设计的方法。     

ADI推出高性能Blackfin处理器

Analog Devices最近推出一系列双核、1GHz处理能力的Blackfin处理器。ADSP-BF608和ADSP-BF609针对嵌入式视觉应用进行了优化,并均配备一个称为＂流水线视觉处理器（PVP）＂的高性能视频分析加速器。PVP由一组可配置的处理模块构成,设计用于加速多达5个并行图像算法,从而实现极高的分析性能。     

创客

Level On
　　近期,三星推出Level系列高端耳机,包含头戴式蓝牙耳机Level Over、头戴式耳机 Level on,以及入耳式耳机Level in三款产品。其中,Level On配备40mm驱动单元,能提供丰富且高分辨率的低音效果,它将以更纯粹的原声体验、更小巧、时尚、轻便设计和智能线控,为用户带来无与伦比的听觉体验。     

金融IC卡认证体系及其安全性分析

IC卡固有的安全性成为国外EMV迁移和国内PBOC2．0金融IC卡迁移的主要动力之一。论文通过讨论当前主流的IC卡认证体系中IC卡数据认证、持卡人认证、交易认证和安全报文这4个主要部分,分析了该认证体系的安全性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.