单氟取代苯基二苯乙炔基异硫氰酸酯的合成与液晶性质研究

为了满足液晶光学器件快速响应的要求,采用有机合成方法获得了6种单氟取代苯基二苯乙炔基异硫氰酸酯类液晶化合物。首先用IR和1HNMR对6种单氟取代液晶化合物的结构进行了表征,其次通过差热分析对其相变温度进行了测试,利用液晶综合参数测试仪对其液晶性能进行了研究。红外和核磁图谱表明合成的化合物即为目标化合物;差热分析获知这些化合物90℃左右进入液晶相,并且氟取代位置在与异硫氰酸酯基相连苯环的2号位置时有相对较低的熔点,最低的熔点可达到83.4℃;液晶综合参数测试结果表明这6种化合物的Δn值为0.432~0.681,同时氟取代位置在与异硫氰酸酯基相连苯环的3号位置时有相对更佳的响应性能。这些化合物在制备快速响应液晶光学器件中可能会有潜在的应用价值。     

棒状液晶分子相变问题的机械旋转模型研究

综述一种关于棒状液晶材料的分子结构与液晶相的相关关系的研究成果。介绍了有关液晶分子的机械旋转模型。该模型将液晶分子视作一种高速旋转的转子,通过分子参数计算,对液晶材料的相变温度和分子结构之间的关系给出了一种全新的解释。最新研究表明,含氟三苯液晶材料的分子结构中存在slim和fat现象,能够对液晶材料的相变进行合理解释。该模型能够通过简单的模型方法对新型液晶材料的分子设计与合成提供有用的信息。     

《液晶与显示》2001年分类目次

１ 显示材料末端氰基取代含氟二苯乙炔类液晶的合成与相变研究………………………………………（１－６）含有两种介晶基元的侧链聚硅氧烷类液晶的热性能………………………………………………（１—１１）新型含氟偶氮苯类液晶的合成和相变研究……………………………………………………（２－１０４）对三氟甲氧基肉桂酸酯类液晶的合成与相变研究………………………………………………（２－１１４）有机电致发光材料用Ｎ,Ｎ,Ｎ’,Ｎ’－四苯基联苯二胺类化合物的制备…………………………（２—１２４）低电压驱动全息聚合物分散液晶…     

含氟二苯乙炔类蓝相液晶的研究进展

蓝相液晶具有高度流动的自聚集的三维立方缺陷结构,在高度手性的液晶中,它们存在于狭窄的温度区间。分子中引入适当的手性中心可以制得蓝相液晶。由于氟原子的特殊性,在液晶核分子中引入含氟二苯乙炔,可以得到黏度低、双折射率及清亮点高的液晶材料。文中介绍了6类含手性端基的含氟液晶化合物(其中有一个化合物不含氟原子)。通过偏光显微镜和DSC对其相变行为进行了研究。结果表明:共有13个化合物显示蓝相;化合物结构中手性中心的细微差别都会导致蓝相的出现或消失。     

二苯乙炔基异硫氰酸酯的合成与液晶性质研究

通过先偶联后还原的方法合成了3种具有氟取代的二苯乙炔基异硫氰酸酯化合物。液晶性质测试表明,这些材料均具有较高的Δn值,且随着分子中π电子共轭长度增加而变大,最大可达0.576。将这些高Δn液晶化合物溶于商品炔类液晶材料,可提高其响应速度;其中苯基二苯乙炔基异硫氰酸酯对器件响应性能的提升幅度最大。实验结果表明,二苯乙炔基异硫氰酸酯是一种具有高Δn、低旋转黏度的快速液晶材料,在液晶空间光调制器件中具有一定的应用价值。     

负性含氟液晶材料的电子轰击质谱分析

利用气质联用对3类6个系列共15种负性含氟液晶化合物进行了电子轰击源(EI)质谱分析,总结了3类负性含氟液晶化合物的质谱裂解规律,并阐述了某些化合物的质谱裂解途径。其中,烷基双环己烷二氟取代苯甲醚液晶化合物的特征离子主要是为环己烷取代基开环的裂解碎片,其m/z主要为226、183、157等;烷基环己基烷氧基三氟取代联苯液晶化合物的特征碎片为环己烷开环碎片及氟取代苯环掉氟的碎片,其m/z主要为(246 A)、(223 A)、(220 A)和(207 A)等(A为15或17);四氟取代联苯酚酯类液晶化合物的特征离子为酯基断裂的碎片和氟取代苯环掉氟产物,其m/z为272或271、229、200、180等。     

新型含氟甾体类液晶的合成与相变研究

设计并合成了3个系列的侧位氟原子取代的甾类液晶，其相变行为通过偏光显微镜观察和DSC进行验证，可以发现氟原子的取代位置不同，对化合物的相变性质影响很大。     

基于分子间氢键的棒状手性液晶的研究进展

分子间氢键棒状手性液晶因其兼具手性液晶奇特的光电性能和氢键液晶的便捷制备以及独特的外界刺激响应性,在功能材料、非线性光学、生物医学等领域具有潜在的应用价值,一直是超分子液晶领域的研究热点。文章按照形成氢键互补基团的不同,将其划分为3种类型,即羧酸-羧酸类、羧酸-吡啶类和其他类型氢键,介绍了此三类氢键棒状手性液晶近年来的研究进展。详细归纳了氢键质子给受体的分子结构、氢键稳定性、手性中心位置、取代基、柔性链长度等对液晶性能的影响,并在此基础上,对其未来发展做了展望。     

丙烯酸酯封端的取代氢键液晶的制备及性能研究

合成了3种丙烯酸酯封端的取代苯甲酸以及其分别与4, 4′-联吡啶和反式吡啶基乙烯自组装形成的双氢键液晶,采用傅立叶红外光谱(FTIR)和核磁共振法(~1H-NMR)表征化合物的结构,使用偏光显微镜(POM)以及差示扫描量热仪(DSC)研究氢键液晶复合体的相转变行为.结果表明,在刚性液晶基元中引入氟原子会增加氢键液晶分子的宽度和降低分子的长径比对液晶材料的性能有很大影响,如降低氢键液晶的熔点以及清亮点等.另外,在柔性链末端引入丙烯酰氧基以及增加液晶基元的长度则会增加液晶分子的长度和规整性,提高氢键液晶复合体的相转变温度.     

一类不对称含氟吖嗪型液晶的合成及中间相性能研究

通过不以肼为原料的方法合成了一系列新型结构中含有吖嗪基团的不对称含氟液晶——N-(4-烷氧基苯甲醛)-N′-(4-氟苯甲醛)缩连氮,通过红外光谱、核磁共振等方法对其化学结构进行了确认,通过偏光显微镜和差示扫描量热仪对它们的中间相性能研究进行了表征,结果表明所合成的化合物均为互变性向列相液晶,可能是由于奇偶效应,它们的中间相性能随分子结构的变化规律并不明显。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.