软件

用于PIC单片机的适配器ISPICR1适配器可对许多PIC单片机进行在电路编程,可连接现有编程器的ZIF插座和目标电路板,包括适配器电路板和接入MolexPicoflex插座的连接电缆。还提供了对应的Picoflex电路板插头,或由用户定制适配器。OKWElectronicshttp://www.okwelectronics.com用于手机的Flash播放器MacromediaFlashLite1.1是用于手机的Flash播放器,可以支持W3C的标准SVGTiny(SVG-T),具备网络连接功能,同时播放SVG-T及Flash动画,拥有更出色的音效支持以及能将Flash内容跟手机功能整合的应用程序接口,将为手机引入更多的互动多…     

测试与仪器

适应DIP和SOIC两种封装的适配器 Aries Electronics公司的350000-HT Correct-A-Chip适配器能使DIP封装的器件升级为SOT或SOIC封装的器件。这些适配器的中心距离有0.300、0.400和0.600英寸三种,引脚有14、18、20和24脚四种。这些适配器具有经济合算的升级程序,而无需对印制电路板重新进行加工或设计。     

面向Arduino平台的Pmod适配器

Arduino适配器（MAXREFDES72#），加速各种量产传感器的原型开发。MAXREFDES72#可将任何连有Pmod的电路板方便地接入Arduino兼容微控制器平台。该款适配器采用Maxim业内领先的器件，能够快速实现物联网设计，并与更多的数字处理器和应用方便对接。     

某型电台电源板检测示教平台的设计与实现

为达到某型电台电路板形象直观的示教、检测和故障诊断的目的,研究开发了某型指挥系统的检测示教平台。文中介绍了某型电台电源板检测示教平台的设计与实现方法,平台主要包括适配器和示教软件两个部分。实际应用表明,该平台运行稳定可靠,能大幅提高装备电路板教学的效率和水平,也为电路板的检测和故障诊断提供了一个途径。     

适应各种新老芯片的插座和适配器层出不穷

虽然芯片直接与印刷电路板相连也许是将来产品设计的标准方案,但还会有许多产品设计仍然要求将芯片安装在印刷电路板上的适配器和插座中。IC封装形式的不断涌现使得插座和适配器制造商们忙于开发各种标准和定制的插接方案。 常常带有数百只引脚的各种最新IC尤其刺激了对新型插座的需求,因     

含有微处理器的电路板故障诊断方法研究及实现

带微处理器电路板的测试是电路板故障诊断中的一个重要课题,文章主要对含有微处理器的复杂电路的故障诊断方法及实现进行了研究,摒弃了过去进行测试程序开发时适配器结构复杂且通用性差、测试过程不易控制等特点。     

飞兆半导体推出集成式PFC控制器

为了满足当前设计工程师所面对的严格的绿色标准要求，飞兆半导体公司（Fairchild Semiconductor）推出一款功率因数校正（PFC）控制器IC，能在笔记本电脑适配器等低于250W的开关电源（SMPS）设计中，减少待机功耗达320mW。除了大幅提高电源效率之外，高度集成的FAN7528还能减少元件数目，从而节省电路板空间。     

基于Protel DXP 2004多层电路板设计

本文首先对Protel DXP 2004软件的多层电路板设计原理和它的设计流程进行介绍,之后介绍了多层电路板的设计基本理念,电和磁同时存在的设计原则,在多层板的情况下,板内电层的分割方法,通过这些介绍和说明,给学习电路板和设计电路板的学员提供了很好的参考和帮助.     

Protel DXP2004—多层PCB板设计

本文介绍了Protel DXP2004多层PCB板设计原理和流程,并阐述了多层电路板设计的基本理念,电磁兼容的设计原则和多层板内电层的分割方法。供电路板设计者参考交流。     

基于安全设计的电话网管理系统协议适配器

交换机多厂商环境一直是困扰我国电话网管理系统建设的难题.文中对现有的的几种解决方案进行了分析,指出了其中的不足,阐述了电话网管理系统中的关键技术--协议适配器的实现思想,重点研究了协议适配器的接口设计和安全性设计.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.