传统固网运营商3G基站末端接入传输网络建设探讨

传统固网运营商在3G网络建设中,需对配套传输网络进行建设,其中对传输影响最大的是无线接入层,为满足RNC与NodeB之间Iub接口对传输的需求。Iub接口电路需跨越传输网的接入层和中继层,在中继层大部分可通过利用现有传输资源解决,在传输接入层必须依靠新建来解决。本文对传统固网运营商的3G接入传输即3G基站末端接入传输网络建设的组网方案、投资估算方法、建设注意事项等进行探讨。     

数据业务端到端QoS参数映射与优化

在移动通信网内采用业务质量(QoS,Quality of Service)机制实现差异化的业务传输是近年的研究热点。端到端QoS包括非接入层用户和业务的识别、不同承载间QoS的一致性传递和接入层QoS的正确执行。这里以EDGE网络中数据业务传送机制为基础,全面研究了3GPP的QoS框架在UMTS网络的GERAN A/Gb模式和UTRAN Iu模式中的QoS映射,给出一个经过优化的端到端QoS参数映射表,并基于该表,在真实的EDGE网络中验证了QoS参数优化的可行性和参数映射的一致性。实验结果表明,根据不同业务的特点采用差异化的传输策略可以提升业务的感知。     

面向双千兆业务发展的传输网络演进思考

为了探究双千兆业务对传输网络的影响,本文从5G布网对传输的超高带宽、低时延、网络分片等的需求,对SPN技术发展和部署进行分析。从千兆宽带对传输的高带宽、分光比和传输距离等性能优化的需求,对10G GPON技术发展和部署进行分析。基于这些诉求,探讨了3层网络下移、网络分片、10G GPON的演进替换等关键问题,并通过建立模型对传输各层带宽进行测算,提出了SPN核心层、汇聚层、接入层的演进方向和组网特征,以及10G GPON的演进方式和比较。通过对基于SPN和10G GPON技术的“双千兆第一区”的建设和运营的研究,引发对后续传输网络的搭建和演进的思考。     

PTN OTN技术及其应用

运营商网络经历了PDH、SDH、MSTP和WDM的发展,随着3G/4G业务的全IP化和大客户业务的宽带化,以及移动互联业务的高速发展,运营商需要更大带宽、更高速率、更可靠业务保护和更多样化QoS的传输网络,现有传输网络已经无法完成新业务的承载需求。PTN和OTN技术的出现弥补了现有网络的缺陷,其联合组网有利于推动城域传输网向着扁平化网络演进。介绍了PTN和OTN的概念,探讨三家运营商的组网方案,提出PTN+OTN联合组网的应用案例。     

3G的传输需求和应对策略研究

3G代表了未来移动通信的发展走向,是移动业务发展的必然趋势,因此在目前建设传输网络时充分考虑3G系统的传输需求是十分必要的.本文针对目前业界在3G传输方面所存在的三大认识误区,分别从3G传输组网的特点、3G接入网络设备的功能和接口类型对传输组网的需求等方面的分析出发,并结合RNC和Node B接口的使用方法和新型城域传送技术的应用,剖析了3G的传输需求并研究了应对策略.     

GPON在3G接入平台的应用

GPON技术是新一代宽带无源光综合接入标准,具有大带宽、高效率、支持各种丰富的业务等优点,被视为实现接入网综合化、宽带化的理想技术.本文介绍了GPON各种技术的特点,结合3G接入平台对传输的要求,从GPON对3G各种类型接口的支持,实现多业务QoS的能力,时钟的保证等方面来分析GPON在3G接入平台的应用场景,进而提出适合GPON发展的应用模式和建议.     

基于综合接入系统的3G业务传输解决方案

3G业务的开展及网络部署已成为各运营商关注的焦点,3G网络的业务特征将对现有的传输网络提出更多的新需求,尤其对接入层网络影响较大.本文从3G网络业务需求特征出发,对接入层传输网络优化的几种方案进行比较分析,提出基于综合接入系统的3G业务传输解决方案.     

3G传输网络技术及建网策略

一、概述 传输网络作为3G网络的基础,是目前运营商网络建设的重点.3G业务网络的底层协议、传输接口以及组网方式与2G不同,对基础传输网络的要求也不一样.本文主要从WCDMA传输接口、传送网技术选择和网络演进三个方面探讨3G传输网络的发展.     

基于ATM理念的UTRAN传输架构简析

现阶段,IP传输还无法满足高等级业务的QoS需求,而ATM技术面向连接的良好特性使其在3G传输网建设中得到广泛应用。本文基于ATM结构与IMA技术理念的分析,衍生出针对其在UTRAN内传输网组建中各式应用方案的探讨,以提供对UTRAN传输架构更为清晰的认识。     

3G传输网技术及演进策略

传输网作为运营商规模最大、结构最为复杂的基础网络,演进的平滑性、兼容性是最为关键的问题。通过对3G传输网分类及结合3G各业务阶段的发展特点,分别探讨了接入和核心传输网传输技术、方案的演进过程。总之,在网络建设的不同时期,演进应根据网络情况和需求采用不同的3G传输方案,对于PTN的引进则从传输网的核心层逐步向接入层推进。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.