RuO_2－Ag低阻浆料中掺入MnO_2、V_2O_5杂质改善电阻特性

ＲｕＯ_２－Ａｇ低阻浆料中掺入ＭｎＯ_２、Ｖ_２Ｏ_５杂质改善电阻特性宋兴义（昆明贵金属研究所昆明６５０２２１）为了改善ＲｕＯ２－Ａｇ系低阻浆料的电阻温度系数，大多采用在电阻浆料中掺入表１掺ＭｎＯ２的ＲｕＯ２－Ａｇ电阻浆料配方ＭｎＯ２、Ｖ２Ｏ５、Ｎｂ２Ｏ...     

用于氮化铝陶瓷基片的电子浆料

研制了用于ＡｌＮ陶瓷基片的导体银浆和电阻浆料。采用低ＰｂＯ含量晶化玻璃料配制银导体浆料，玻璃软化点４３０～４５０℃。电阻浆料采用ＰｂＯ（质量分数小于６％）的晶化玻璃料Ｂ、Ｃ、Ｄ三种，软化点分别为５２０℃、６９０℃、６１０℃。改变ＲｕＯ２与玻璃相的质量比，能控制电阻浆料的方阻值。质量比在５０比５０至１５比８５之间。加入添加剂ＭｎＯ２可改善电阻浆料的ＴＣＲ，阻值在２０Ω／□～１ＭΩ／□范围内，ＴＣＲ绝对值小于２００×１０－６／℃。     

如何提高呼叫建立成功率

呼叫建立成功率是衡量一个网络质量的重要指标之一,所以想办法提高网络的呼叫建立成功率是非常重要的。 下面详细说明根据呼叫建立成功率计算公式分析可能原因,最后定位到哪套ＲＦ硬件问题。 一、呼叫建立成功率计算公式 Ｃａｌｌ_Ｓｅｔｕｐ_Ｓｕｃｃｅｓｓ_Ｒａｔｅ＝（ＴＯＴＡＬ_ＣＡＬＬＳ＋ＣＯＮＧＥＳＴ_ＡＳＳＩＧＮ　ＨＯ　ＳＵＣ）／（ＯＫ_ＡＣＣ_ＰＲＯＣ：ＣＭ_ＳＥＲＶ_ＲＥＱ_ＣＡＬＬ＋ＯＫ_ＡＣＣ_ＰＲＯＣ：ＣＭ_ ＲＥＥＳＴＡＢＬＩＳＨ＋ＯＫ_ＡＣＣ_ ＰＲＯＣ：ＰＡＧＥ_ ＲＥ-ＳＰＯＮＳＥ＋ＯＫ_ＡＣＣ_ＰＲＯＣ…     

高可靠性钌系厚膜电阻浆料

电阻浆料的电性能，直接影响电子元器件和电路的性能，高可靠的电阻浆料为电路制作提供了保障。杜邦１７００系列电阻浆料在我国应用较广，电性能的可靠性得到电路制作者的认证，经Ｘ射线分析，该系列浆料的主要组成为ＲｕＯ２和ＺｒＳｉＯ４。近年我们开发的Ｒ２０００系列电阻浆料，主要组成是钌酸盐和硼硅酸盐，与杜邦１７００系列同时作印烧后电性能测试，工艺性和电性能均稳定可靠，ＴＣＲ〈１００ｐｐｍ／℃，各种环境条件下阻     

厚膜铂电阻温度传感器研究

厚膜铂电阻温度传感器以铂膜作电阻，采用厚膜印刷工艺，线宽和间隔均为１００μｍ。铂电阻具有工艺性好、长期稳定性好、ＴＣＲ复现性极好等诸多优点，其Ｒ（０℃）＝１００Ω，ＴＣＲ＝３８５０×１０－６℃－１。     

数字电视机顶盒电源的硬件解决方案

１ 引言随着各种与电视广播有关的数字产品的大量出现,各种机顶盒纷纷登场,如数字电视机顶盒、卫星电视机顶盒、上网电视机顶盒等等。这些机顶盒的电源功率一般都在４０ Ｗ以下。下面简要介绍康佳的数字电视机顶盒的电源解决方案,此应用基于日本三肯公司的厚膜集成电路ＳＴＲ-Ｆ６５５２。２ 主要性能特点（１）ＰＲＣ工作模式本电源应用ＳＴＲ-Ｆ６５５２厚膜集成电路,内含ＭＯＳＦＥＴ和控制集成电路,工作ＰＲＣ型开关模式。ＰＲＣ（Ｐｕｌｓｅ Ｒａｔｉｏ Ｃｏｎｔｒｏｌ）即脉宽比率调制。（２）稳压范围宽本机为美国电源设计,输…     

可调谐TEACO_2激光在AgGaSe_2晶体中的多波长倍频获成功

可调谐ＴＥＡＣＯ_２激光在ＡｇＧａＳｅ_２晶体中的多波长倍频获成功中国科学院安微光机所承担的国家自然科学基金项目“可调谐ＴＥＡＣＯ２激光在ＡｇＧａｓｅ２中的倍频研究”，经有关科研人员的共同努力，取得了突破性进展，在国内首次成功的实现了光棍选颁ＴＥＡＣＯ...     

钌基厚膜电阻器传导机理述评

钌基厚膜电阻器传导机理的合理解释为隧道效应。钌基厚膜电阻器电导的温度相关性、电导的电场相关性、电阻的应变效应及其他一些实验现象均可用隧道效应加以解释。文章还介绍了几种传导模型：Ｃａｎａｌｉ的模型给出了与实验现象一致的定性解释；Ｐｉｋｅ的理论计算运用于有效激合能为主要作用的Ｍ２Ｒｕ２Ｏ７型电阻器；Ｗｉｋｌｅｒ证明了电子以弯曲轨道传递的模型是合理的。     

厚膜线性NTC热敏电阻器的研究

普通ＮＴＣ热敏电阻器的阻－温特性呈指数变化,用于测温、控温和温度补偿很不方便,而ＮＴＣ线性网络又相当复杂。借鉴普通ＮＴＣ热敏电阻器线性化的机理,能够使宏观上的热敏电阻器与普通电阻器的串并联,在微观上得以实现以Ｍｎ－ＣＯ２Ｏ４和ＣｏＭｎ１．５Ｎｉ０．５Ｏ４为热敏相,适当的ＲｕＯ２为导电相,硼硅玻璃为玻璃相,用厚膜陶瓷工艺制成了厚膜线性ＮＴＣ热敏电阻器。     

钌系厚膜片式电阻器热处理工艺的研究

研究了热处理工艺对钌系厚膜电阻器的温度系数（ＴＣＲ）和短时间过负载性能的影响,发现适当的热处理工艺可以改善厚膜电阻器的电性能。为探讨热处理工艺对电阻膜层微观结构的影响,对热处理前后的电阻膜层进行了ＳＥＭ形貌分析。     

热处理对TaN薄膜电性能的影响

采用直流磁控溅射法在Al2O3陶瓷基片上制备了TaN薄膜,研究了热处理温度和时间对TaN薄膜的方阻(R□)及电阻温度系数(TCR)的影响。研究发现,在热处理时间为2h的条件下,热处理温度在200℃到600℃变化时,R□从12?/□增加到24?/□,TCR从15×10-6/℃下降到-80×10-6/℃;在热处理温度为300℃的条件下,热处理时间对R□及TCR影响较小,随着热处理时间的增长,R□及TCR略有变化。     

The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering

The temperature coefficient of resistance (abbreviated as TCR) of thin film resistors on some sensor chips,such as thermal converters,should be less than several ppm/℃.However,the TCR of reported thin films is larger than 5 ppm/℃.In this paper,Ni_24.9Cr_72.5Si_2.6 films are deposited on silicon dioxide film by DC and RF magnetron sputtering.Then as-deposited films are annealed at 450℃ under different durations in N₂ atmosphere. The sheet resistance of thin films with various thickness and annealing time are measured by the four probe resistivity test system at temperature of 20,50,100,150,and 200℃ and then the TCR of thin films are calculated. Experimental results show that the film with the TCR of only-0.86 ppm/℃ can be achieved by RF magnetron sputtering and appropriate annealing conditions.     

Environmentally sustainable composite resistors with low temperature coefficient of resistance

Temperature coefficient of resistance (TCR) of thick film resistors are based on fired conducting grains and glass composites. Many analog sensor and control circuits require low (<100 ppm/°C) TCR value. To prepare resistors with low TCR value, knowledge of processing conditions and conduction mechanism parameters are of particular importance because TCR is finalised during firing and cannot be trimmed in the latter stage to a target value as resistors can be. This paper reports the preparation and properties such as microstructural and electrical in particular to sheet resistance, TCR (hot and cold) of eco-friendly composite resistor paste compositions. Our resistor compositions showed the sheet resistance in the range of 1.18–1.38 KΩ/□ and the hot and cold TCR of the compositions reduced substantially from 360 to 100 ppm/°C and 175 to 60 ppm/°C with the addition of TCR modifier.     

氧压对ZnO薄膜电阻温度系数的影响

采用脉冲激光沉积(PLD)技术,在不同氧气氛下,在Si(lll)衬底上生长了ZnO薄膜,使用X线衍射仪分析了ZnO薄膜的结晶质量.计算了不同氧气氛下生长的ZnO薄膜的电阻温度系数(TCR)值,发现随着氧分压降低,ZnO薄膜的TCR值增大;ZnO薄膜的TCR值最高可达-8%/K.这为研究ZnO薄膜的导电特性提供了新的途径,开辟了ZnO薄膜在室温非制冷红外微测辐射热计材料中的应用潜力.     

稳定的特高阻电阻器的研制

介绍一种体积小、性能稳定的特高阻电阻器的研制过程及其性能。电阻器阻值范围 :1～ 10 0 GΩ ;αR:(- 40～ - 90 0 )× 10 - 6 ℃ - 1 ;体积 :5 mm× 12 mm× 2 mm。     

室温红外探测薄膜电阻温度系数测试技术

薄膜电阻温度系数的准确测定对红外探测薄膜材料的研究有着十分重要的意义.研究了薄膜电阻温度系数实时测试技术,重点考虑微弱信号放大和噪声有效抑制,实现了微小间隔下对温度和电阻同时采集,以及数据的精确处理.采用该测试系统准确地测试出几种常用红外探测薄膜材料的电阻温度系数.     

Spectroscopic analysis of multi-walled carbon nanotube–alumina composite films: Optimization of temperature coefficient of resistance and thermal hysteresis for thermal sensor applications

In this paper, we report a novel approach to study the potential use of multi-walled carbon naotubes (MWCNTs)–alumina (Al₂O₃) composite for heat sensing applications. This is achieved by optimizing the temperature coefficient of resistance (TCR) and thermal hysteresis of the composite. The composites were developed by uniform dispersion of MWCNTs in alumina in different concentrations following sol‐gel route. MWCNT loading in the alumina was found to be very effective to control the TCR as well as the hysteresis loss. The room temperature TCR versus MWCNTs concentration plot first shows an increasing trend with increase of MWCNTs concentration in the composite and reaches a threshold followed by drop in TCR. The maximum value of TCR that has been achieved is −0.56%/°C for 4 wt% MWCNTs content and is found to be ~1.5 times higher than the conventional metals and semiconductors. The hysteresis loss was found to decrease gradually to almost zero from 5 wt% onwards. The TCR and hysteresis variation is correlated with MWCNTs concentration dependent Raman, FESEM, EDS studies in the composite and there is a fair agreement in support of the observations.     

Enhanced Thermal Transport across Self-Interfacing van der Waals Contacts in Flexible Thermal Devices

Minimizing the thermal contact resistance (TCR) at the boundary between two bodies in contact is critical in diverse thermal transport devices. Conventional thermal contact methods have several limitations, such as high TCR, low interfacial adhesion, a requirement for high external pressure, and low optical transparency. Here, a self-interfacing flexible thermal device (STD) that can form robust van der Waals mechanical contact and low-resistant thermal contact to planar and non-planar substrates without the need for external pressure or surface modification is presented. The device is based on a distinctive integration of a bioinspired adhesive architecture and a thermal transport layer formed from percolating silver nanowire (AgNW) networks. The proposed device exhibits a strong attachment (maximum 538.9 kPa) to target substrates while facilitating thermal transport across the contact interface with low TCR (0.012 m² K kW⁻¹) without the use of external pressure, thermal interfacial materials, or surface chemistries.     

基于负温度系数的多晶硅电阻电热激励/压阻检测微桥谐振器的新型红外探测器

报道了一种基于负电阻温度系数的多晶硅电阻电热激励/压阻检测SiO 2/Si3N4/SixNy微桥谐振器的新型红外探测器.微桥谐振器吸收的红外辐射引起微桥温度升高,激励电阻和检测电桥的阻值减小,使得恒定激励电压作用下激励电阻的静态功率和惠斯登电桥的焦耳热增加,等效于增加了辐射在微桥谐振器上的红外辐射.初步的实验证实了该方案的可行性.     

一种微型Pt温度传感器及其读出电路的研究

基于电阻温度系数(TCR)原理及微机电系统技术,设计并制作了一种用于微型聚合酶链式反应(PCR)芯片的Pt温度传感器及其读出电路。利用溅射和剥离技术将厚度为100 nm的弯曲条形Pt传感器制作在硅衬底上。其长度和宽度分别为2 030μm和10μm。设计了基于四线法温度测量的读出电路,该电路主要包括一个恒流源电路和一个电压放大电路。测试结果表明,该传感器的电阻温度系数为1.48×10-3℃-1,其电阻变化随着温度的变化具有良好的线性度,当温度在27～100℃变化时,电阻范围在653.5～716.5Ω变化。在接出一个8位的模数转换器以后,整个传感器和读出电路能确保一个精度为0.2℃的温度控制,满足一般PCR测量需要。