| 热处理对TaN薄膜电性能的影响 |
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| 引用本文： | 刘飞飞,唐云,张万里,蒋洪川,司旭.热处理对TaN薄膜电性能的影响[J].电子元件与材料,2011,30(2):47-49. |
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| 作者姓名： | 刘飞飞 唐云 张万里 蒋洪川 司旭 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
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| 基金项目： | 四川省支撑计划资助项目，电子薄膜与集成器件国家重点实验室基金资助项目 |
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| 摘 要： | 采用直流磁控溅射法在Al2O3陶瓷基片上制备了TaN薄膜,研究了热处理温度和时间对TaN薄膜的方阻(R□)及电阻温度系数(TCR)的影响。研究发现,在热处理时间为2h的条件下,热处理温度在200℃到600℃变化时,R□从12?/□增加到24?/□,TCR从15×10-6/℃下降到-80×10-6/℃;在热处理温度为300℃的条件下,热处理时间对R□及TCR影响较小,随着热处理时间的增长,R□及TCR略有变化。
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| 关 键 词： | TaN薄膜 热处理 方阻 电阻温度系数 |
Effect of heat treatment on the electric properties of TaN thin films |
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| LIU Feifei,TANG Yun,ZHANG Wanli,JIANG Hongchuan,SI Xu.Effect of heat treatment on the electric properties of TaN thin films[J].Electronic Components & Materials,2011,30(2):47-49. |
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| Authors: | LIU Feifei TANG Yun ZHANG Wanli JIANG Hongchuan SI Xu |
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| Affiliation: | LIU Feifei,TANG Yun,ZHANG Wanli,JIANG Hongchuan,SI Xu (Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054) |
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| Abstract: | TaN thin films were deposited on Al2O3 ceramic substrate by DC magnetron sputtering.The effects of heat treatment temperature and time on the sheet resistance (R□) and temperature coefficient of resistance (TCR) of TaN thin films were investigated.The results show that the heat treatment temperature has great effects on both R□ and TCR under heat treatment for 2 h.With the heat treatment temperature increasing from 200 ℃ to 600 ℃,R□ increases from 12 Ω/□ to 24 ?/□ and TCR decreases from 15×10-6/℃ to-80×10-6/℃.Under the heat treatment temperature of 300 ℃,heat treatment time has little effects on both R□ and TCR.As heat treatment time increases,R□ and TCR change slightly. |
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| Keywords: | TaN thin film heat treatment sheet resistance temperature coefficient of resistance |
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