一种基于HTCC的高隔离度开关电路设计

基于开关芯片实现的开关电路是射频前端的基本单元之一,其功能是实现射频信号的导通和关断,在小功率射频信号传输中应用广泛。本文以6 GHz～15 GHz超宽带、60 dB隔离度为设计目标,采用高温共烧陶瓷基板工艺和级联腔体隔离技术,以级联开关芯片为基本电路结构,设计了高隔离度开关电路。该电路包含一只限幅器和两只吸收式砷化镓单刀单掷开关,装配于两个相邻的隔离腔体结构中,通过类同轴垂直传输过渡到基板内对称带状线传输结构,再辅以两侧地孔,实现电磁屏蔽。对开关电路进行电磁场建模仿真,结果表明该结构具有良好的传输特性和隔离特性;在射频前端电路制造完成后对开关电路进行装配和测试,测试结果与建模仿真结果一致性高,验证了本文设计的开关电路具有高隔离度特性。     

在SOI基上设计实现D/A驱动的高压LDMOS开关电路

设计实现SOI基上带有D/A驱动的高压LDMOS功率开关电路,利用D/A变换的灵活性,运用数字电路与高压模拟电路混合设计方法,实现数字控制的耐压为300V的LDMOS功率开关电路．该功率集成电路芯片的实现,为SOI高压功率开关电路提供了一种更为方便快速的数字控制设计方法,同时也为功率系统集成电路提供了一种有效的实验验证,从而证实了功率系统集成的探索在理论上以及工程上具有一定的可行性．     

在SOI基上设计实现D/A驱动的高压LDMOS开关电路

设计实现SOI基上带有D/A驱动的高压LDMOS功率开关电路,利用D/A变换的灵活性,运用数字电路与高压模拟电路混合设计方法,实现数字控制的耐压为300V的LDMOS功率开关电路.该功率集成电路芯片的实现,为SOI高压功率开关电路提供了一种更为方便快速的数字控制设计方法,同时也为功率系统集成电路提供了一种有效的实验验证,从而证实了功率系统集成的探索在理论上以及工程上具有一定的可行性.     

基于硫系玻璃的光学被动式红外无热化镜头设计

研究了一种锑化铟红外焦平面器件盲元分析方法,即无需将器件背面减薄就可进行盲元测试与分析。用该封装装配方式将器件倒置,实现从芯片正面吸收光的照射。在完成互连、灌胶以及每一步磨抛工艺步骤后,都可以进行测试和分析。结果表明,该方法能够有效地分析和定位每步工序过程中产生的盲元情况,解决了现有技术手段中对红外焦平面器件因产生盲元导致像元失效无法准确定位出现在哪步工艺的问题。     

QFN芯片表面划痕检测定位方法设计

在工业应用中,需要对方形扁平无引脚封装(Quad flat no-lead package, QFN)芯片表面划痕实时 准确检测,提出了一种快速的芯片表面划痕检测定位方法。通过图像分割算法获取缺陷图像,结合 轮廓提取算法可以较好地实现芯片表面划痕定位。同时,为了保证对芯片表面划痕实时检测,采用 基于粒子群的Otsu多阈值算法进行图像分割,不仅使得图像中缺陷区域更加明显,而且缩短了芯片 表面划痕检测时间。与直接采用Otsu算法相比,芯片表面划痕检测时间由秒级缩短至毫秒级,提高 了芯片质量检测效率。该划痕快速定位检测方法对芯片检测设备软件系统开发与应用具有重要的参考价值。     

基于FPGA的RFID晶圆并行测试系统设计

针对高频射频识别(RFID)晶圆在中测(CP)阶段单通道串行测试效率低下的问题,设计了一种基于现场可编程门阵列(FPGA)的多通道并行测试系统以提高测试效率.鉴于RFID晶圆上没有集成天线,提出了一种新的基于探针技术的射频耦合式的晶圆检测方法,模拟芯片实际工作.系统选用FPGA为微控制器,配以多路射频耦合通信电路,实现测试向量生成及快速信号处理.再结合上位机与探针台高速并行的通用接口总线(GPIB)通信接口,以实现晶圆级RFID芯片测试.经实际测试,该系统能够实现16通道并行测试,与单通道串行测试系统相比,效率提升了97％,可靠性好,稳定性高,可应用高密度RFID晶圆的中测.     

基于物理版图信息的低功耗扫描测试方法

芯片测试模式下功耗过高的情形会极大地降低芯片良率,已经成为越来越严重的问题。针对此问题,本文提出了一种降低测试功耗的设计方法。该方法采用贪婪算法来改变扫描链顺序,同时考虑芯片物理版图中寄存器单元的具体位置,能够实现在不影响测试覆盖率和绕线的前提下,快速有效地降低测试功耗。与已有的多种方法相比,该方法更快速更合理,可以应用于多种芯片的扫描链设计。该方法通过一款实际的电力线载波通信芯片验证,分别将平均功耗和瞬态功耗降至77%和83%。     

基于机器视觉的表贴芯片缺陷检测系统研究

基于表贴芯片缺陷检测的需要,设计了一种基于机器视觉的表贴芯片缺陷检测系统,并对该系统的硬件和软件部分作了简要介绍,重点研究了芯片的引脚边缘检测算法,在此基础上实现了芯片长度、宽度和间距等特征参数的提取。测试结果表明,该检测系统能达到在线生产的工艺要求。     

一种用于三相无刷直流电机驱动的软开关电路

提出了一种用于三相无刷直流电机(BLDCM)驱动芯片的软开关电路。利用提出的控制电路,实现了输出换相切换时的平稳过渡。该软开关控制电路在驱动相进入驱动状态或退出驱动时起作用,实现了驱动或退出驱动的平稳过渡,有效抑制电机换相时负载线圈上的电流波动及发热,实现了换相转动力矩的平稳切换。该控制电路完全集成于电机驱动芯片内部,不使用外部元件和引脚。通过UMC 0.6μm 5V2P3MBiCMOS工艺,对电路进行流片验证。芯片样品测试结果表明,该软开关控制电路可实现驱动换相的平稳切换。     

基于ESD的芯片失效分析

提出了一种基于静电放电（ESD）的芯片可靠性测试及失效分析流程,并且以芯片静电放电测试为例详细阐述了芯片失效分析的过程与实现方法,包括电性失效分析和物理失效分析。通过专用仪器对芯片进行了静电放电测试,并利用红外微光显微镜（EMMI）及砷化镓铟微光显微镜（InGaAs）等实现芯片故障定位,从而确定芯片的失效模式与失效机理,实验证明该方法切实有效,这种失效分析的结果对优化集成电路的抗静电设计以及外部工作环境的完善都具有重要的参考意义。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.