（k，n）异或视觉密码的一般性研究

通过研究(k, n)异或视觉密码像素扩展度最优的必要条件,该文提出一种由基矩阵生成(k, n)异或视觉密码的方法,并从理论上证明了该方法适合2相似文献   

多重门限的图像秘密共享方案

 针对传统的基于视觉密码的图像秘密共享方案存在像素扩张导致其只能共享小尺寸的秘密图像、信息隐藏效率较低的问题,提出一种能够提高信息隐藏容量的(t,k,n)多重门限图像秘密共享方案.该方案利用秘密图像信息控制视觉密码方案中共享矩阵的选取,从而实现秘密图像在视觉密码方案中的隐藏.在秘密图像恢复的第一阶段,任意t个参与者直接叠加其影子图像后可以视觉解密出低质量的秘密图像信息;在第二阶段,任意k个参与者可以从影子图像中提取出隐藏的信息,并通过计算恢复出精确的灰度秘密图像.相对于传统的视觉密码方案,本文方案在不影响视觉密码恢复图像的视觉质量前提下,可以隐藏更多的秘密图像信息,而像素扩张尺寸较小.     

无损分享视觉密码研究

根据秘密图像分享过程中的信息损失,给出了无损分享视觉密码的概念,从而将视觉密码2个参数的优化问题简化为一个,并提出了矩阵转化算法和整数规划模型,实现了一种像素扩展度的优化算法。实验结果表明,该算法能够实现无损分享下的像素扩展度最优化,且适用于通用存取结构。     

一种共享份分块构造的异或区域递增式视觉密码方案

该文依据授权子集的个数将共享份划分若干块,按照共享份分块构造的设计思路,结合(n, n)异或单秘密视觉密码的加密矩阵,构造了异或区域递增式视觉密码的秘密分享与恢复流程。与现有方案相比,该方案可以实现解密区域图像的完全恢复,且明显减小了共享份的大小。     

异或视觉密码的理想存取结构研究

该文给出异或视觉密码的理想存取结构的定义,分析了其特征,研究了理想存取结构的共享份构造方法。在此基础上,提出将通用存取结构划分为若干个理想存取结构的算法,设计了通用存取结构的秘密分享与恢复流程。与现有的方案相比,该方案实现了秘密图像的完全恢复,且明显地减小了共享份的规模。     

解密区域完美恢复的区域递增式视觉密码方案构造

为了优化区域递增式视觉密码的恢复效果,该文通过为共享份添加身份标识,并结合随机数,构造了单个参与者持有多个共享份的异或单秘密视觉密码方案,在此基础上,设计了异或区域递增式视觉密码的秘密分享与恢复算法。对于解密区域利用异或单秘密方案进行分享,对于未解密区域,通过填充随机数实现秘密遮盖。实验结果表明,该方案可以实现解密区域图像的完美恢复,且有效减小了共享份的存储与传输开销。     

每次处理2个像素像素扩展度为1的(2,2)视觉密码方案

为了解决传统视觉密码像素扩展度高的问题及分存图像占用存储空间过大问题,提出每次处理2个像素像素扩展度为1的(2,2)视觉密码方案.方案中,秘密图像为黑白二值图像,每次处理2个像素,得到的2个分享份额图像为黑白噪声图像,叠加分享份额恢复秘密图像.该方案解密过程简单,恢复秘密图像无变形,像素扩展度为1.     

基于环形共享份的多秘密视觉密码

通过对秘密图像和环形共享份进行纵向区域分割,该文提出了相关矩阵组,并在此基础上设计了一种新的多秘密视觉密码方案。与现有的多秘密方案相比,该方案不仅实现了加密任意数量的秘密图像,而且在像素扩展度和相对差等方面有明显改善。     

基于视觉密码的DWT-SVD水印技术

本文提出基于视觉密码的数字水印技术,利用像素不扩展的(2,2)视觉密码方案,将秘密图像拆分成两个与秘密图像等大小的分享份图像,把两个分享份图像利用DWT-SVD水印算法嵌入到载体图像中,最后利用数字水印的提取算法,将两个分享份图像提取出来,进行叠加恢复秘密图像.基于视觉密码提取出来的分享份不会泄露秘密信息的任何内容,从而保证了秘密信息的安全性.实验结果表明,此方案可以抵抗常见的攻击行为.     

一种新的多秘密分享视觉密码

 本文给出了一种新的多秘密分享视觉密码的定义,能够支持多授权子集和共享份操作.基于区域标记和单秘密视觉密码的基础矩阵,设计了多秘密分享与恢复的流程,给出一种实现方案.最后对方案的有效性进行了理论证明和实验验证.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.