铃声

63（3）＊5（5）＊＊3（3）＊6＊1（5）6＊＊1（5）＊＊6＊＊1（5）＊＊3（3）＊>3（3）＊>3（3）＊＊2（5）＊＊3（3）＊＊1（5）＊＊63（3）＊5（5）＊＊6（5）＊>6（5）＊>6（5）＊3（3）＊5（5）3（3）＊＊5（5）＊＊3（3）＊＊5（5）＊＊6（5）＊>6（5）＊>6（5）＊3（3）＊5（5）4（6）＊＊5（5）＊＊6＊4（5）＊＊5（5）＊＊6＊3（3）＊>3（3）＊＊20＊＊1（5）2（5）>2（5）>2（5）＊1（5）＊＊2（5）＊＊3（3）＊5（5）＊6（5）     

铃声·手机秘笈

街角的祝福（戴佩妮）（GD92/GD93/GD80）4＊5＊4＊5（5）4（5）＊>4（5）＊>4（5）2（5）＊>2（5）4（5）0＊4（5）＊5（5）＊4（5）＊6（6）＊5（5）＊>5（5）＊4（5）＊5（5）＊4（5）＊>4（5）＊1（5）＊2（5）＃06（2）＊>6（2）＊     

第七届《固体电子学研究与进展》编辑委员会

主编（Editor－in－Chief）：林金庭（LinJinting）副主编（DeputyEditor－in－Chief）：杨乃彬（YangNaibin）金毓铨（JinYuquan）景佩苏（JingPeisu）委员（MembersofEditorialCommittee）（按姓氏笔划为序）：王因生（WangYinsheng）南京电子器件研究所王向武（WangXiangwu）南京电子器件研究所毛昆纯（MaoKunchun）南京电子器件研究所许居衍（XuJuyan）中国华晶电子集团公司史常忻（ShiChangxin）上海交通大学李肇基（LiZhaoji）电子科技大学沈亚（ShenYa）南京电子器件研究所邵凯（Sha。Kai）南京电子器件研究所陈朝（Ch…     

摄录编设备常见单词与缩写

A（audio）音频AC（AlternatingCurrent）交流adaPter适配器adiustment调整ADV（advance）推进AEF（AutoEditingFunction）自动编辑功能AFM（AudioFrequencyModulation）音频调制AGC（AutoGainCogtrol）自动增益控制alarm报警ASSEM（assemble）组合ATW（AutoTrackingWhite）自动跟踪白平衡AUD（audio）音频AUX（auxiliary）辅助的AW（AutoWhite）自动白平衡BB（blue）蓝BACK．L（backlighting）逆光balance平衡bars彩条BATT（battery）电池BB（BlackBurst）带色同步的黑杨BLK（black）黑brightness亮度B－Y蓝色…     

信息动态

主要性能特征 （1）精巧立体声功放;（2）内置扩展电源;（3）机载输入增益控制;（4）VCA（欧式）控制;（5）削波（CLIP）、开机（POWERON）、待机（STBY）及信号出现（SP）指示灯;（6）直流及短路保护;（7）工作模式：立体声、并联、桥接;（8）低频响应达100Hz,则关闭高通滤波器;（9）无声对流散热;（10）自动感应开关,节能设计,适合隐藏式安装;（11）德国工业标准（DIN）35mm轨道式安装,墙安装挂件;（12）平衡立体声线路输入插孔（欧式）;（13）非平衡立体声线路输入插孔（莲花）;（14）欧式输出控制;（15）质量：3．5kg（AMPACK25）,4．5kg（AMPACK80）。     

我国半导体市场产品的环境简析

2005年我国半导体分立器件市场外资、合资企业占我国分立器件市场的64．9％的份额（图1、图2）。其主要外资、合资企业有：TOSHIBA（东芝）、RENASAS（瑞萨）、Rohm（罗姆）、Matsushita（松下）、Sanyo（三洋）、NEC、FUJJITSU（富士通）、Fuii、Electric（富士电子）、Sanken（三肯）、On Semiconductor（安森美）、Fairchild Semiconductor（飞兆半导体）、International Rectifier（国际整流器）、Vishay（威旭半导体）、Philips Semiconductor（飞利浦）、Infineon （英飞凌）、ST Microeletorics（意法）、KEC、LITEON Group（宝光）（中国台湾省）。     

SGS-THOMSON公司功率MOS管选型指南

ＳＧＳＴＨＯＭＳＯＮ公司功率ＭＯＳ管选型指南ＶＤＤ（Ｖ）ＲＤＳ（ｏｎ）（ｍａｘ）（Ω）封装型号ＩＤｃｏｎｔ（Ａ）Ｐｔｏｔ（Ｗ）ＶＤＤ（Ｖ）ＲＤＳ（ｏｎ）（ｍａｘ）（Ω）封装型号ＩＤｃｏｎｔ（Ａ）Ｐｔｏｔ（Ｗ）１０００１０００１０００１０００１０００...     

我国PCB工业面临的“四大”挑战（1）——“减成法”技术“制造极限”的挑战

概括地评述了＂减成法＂生产PCB高密度化程度的发展与要求,它必然会遇到＂制造极限＂的挑战。挑战的主要内容是：（1）导线（体）的（L/S）精细化（度）的要求;（2）导线（体）表面光洁（平滑）度的要求;（3）导线（体）尺寸偏差或完整（无缺陷）性的要求;（4）导线（体）的位置（特别是层间对位）度的要求。     

电信技术 2002年第1~12期总目录

不断改革创新更好服务读 本刊编辑部1（1）中华人民共和国通信行业标准发布公告（2002年第1号 ）３（1）中华人民共和国通信行业标准发布公告（2002年第2号 ）６（1）中华人民共和国通信行业标准发布公告（2002年第3、4号 ）８（1）中华人民共和国通信行业标准发布公告（2002年第5号 ）９（1）中华人民共和国通信行业标准发布公告（2002年第6号 ）１１（1）通信技术标准按专业分类目录（1）~（9 ）4（75）鄢特别策划鄢软交换技术的现状及待研究的问题 赵慧玲谭国权单秀云１（2）下一代网络中的媒体网 …     

《微波学报》征稿简则

1．投稿内容范围（1）微波场论及数值计算;（2）微波网络;（3）微波元件及电路;（4）毫米波及亚毫米波技术;（5）微波天线与散射;（6）微波集成电路;（7）微波CAD;（8）微波电磁兼容;（9）微波测量;（10）微波生物医药;（11）微波在军事领域及工农业生产上的应用;（12）有关交叉学科。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.