基于立体匹配技术的数字全息三维形貌重构

针对数字全息对物体三维形貌的重构与测量,提出了一种将数字全息术与立体匹配术相结合的三维测量方法。首先利用离轴菲涅耳数字全息系统,采集三维物体的单幅离轴菲涅耳全息图;然后将获取的数字全息图分为两个部分,分别进行数值再现,可以得到两个再现像,两个再现像存在视差。最后利用立体匹配算法获取两幅视图再现像的视差,根据几何关系获取物体的深度信息,重构物体的三维形貌。实验中,分别对不连续物体和连续物体进行三维形貌的重构,得到了准确的三维物体深度信息。数值模拟和初步实验结果表明该方法有效可行。     

数字全息中基于优化Harris角点的相位拼接算法

针对数字全息技术中测量面积受限的问题,提出基于优化Harris角点算法的拼接算法实现相位的双方向拼接。在获取数字全息图像时,保证相邻区域具有部分重叠,再对获得的物体的各子孔径相位图像进行拼接;用Harris角点算法检测角点密集区域为匹配模板,可高效且精准地确定重叠区域,结合高斯尺度空间和金字塔匹配思想对算法进行优化,通过加权融合实现三维形貌的再现相位拼接。以玻璃样板为实验对象,完成了物体再现相位的双方向拼接。实验结果表明:该拼接方法能够有效扩大数字全息测量物体的测量面积,并保证了较高的拼接准确度。     

数字全息中利用图像拼接测量大物体的三维形貌

为扩大数字全息的测量视场,使数字全息可以应用于大物体三维形貌的测量,利用菲涅耳离轴数字全息,让照明光依次照明物体的各个区域并分别记录全息图,利用精密电控旋转台精确控制参考光的入射角以保证每次记录时物参角不变,通过参考光入射角的变化量确定物体不同被照明区域之间的位置关系,对获得的物体去包裹的相位图进行拼接,进而得到整个物体的三维形貌.利用该方法测量了大小为11 cm×19 cm的石膏嘴的三维形貌,图像拼接的绝对拼接误差远小于1.14 mm,高度测量误差约为0.5 mm,实验结果说明这种测量方法能够有效地扩大数字全息测量物体三维形貌的视场并且具有和横向分辨率相当的拼接精度.     

多三维物体菲涅耳变换数字实现方法

提出一种在同一张全息图上记录多个三维物体菲涅耳衍射分布的数字化编解码方法。首先利用一次快速傅里叶变换算法计算三维物体全息面上的物光波复振幅分布;然后对物光波数据预处理以克服频谱面上各三维物体数字频谱的混叠问题;最后控制不同的载频系数制作计算全息干涉图。数字再现通过在全息图数字频谱面的特定位置提取有效频谱分量,再计算离散菲涅耳逆变换的方法实现各原始三维物体的数字重建。仿真实验结果表明所提出的方法实现了不同制作参数的多个三维物体的同时记录,并且具有良好的数字再现质量,全息图制作参数如波长、再现距离、载频系数还可作为密钥,实现多个三维物体的加密存储。     

利用多尺度变换提高数字全息再现像质量

针对三维物体数字全息实验系统的特点,提出了基于多尺度变换的数字图像处理方法.利用小波变换和Curvelet变换的多尺度处理,成功滤除再现像中的零级衍射光斑,有效减小散斑噪声的影响并保留更多物像边缘信息,得到较高质量的数字全息再现像.实验结果表明,该方法具有较高实用性.     

三维纯相位全息显示中的散斑噪声抑制

提出了一种基于角谱衍射理论的误差扩散算法。通过分层角谱算法计算得到三维物体的复振幅全息图,利用误差扩散法计算得到纯相位全息图,并重建出清晰的再现像,实现了对三维物体纯相位全息再现像的散斑噪声的抑制。仿真实验验证了该方法的可行性及优越性,所提方法明显提高了重构图像的质量。     

离轴数字全息记录条件的研究

用振幅全息和菲涅耳衍射理论,分析离轴数字全息记录系统结构参数对数字全息再现的影响,并进行相应的实验验证。理论分析和实验研究结果都表明,如果记录物体和CCD的尺寸固定,记录物体和CCD之间的记录距离将直接影响数字全息再现像的分离状况和系统的分辨率,在保证再现像分离的前提下,缩短物体和CCD之间的距离将有利于数字全息再现像分辨率的提高。     

非相干光照明数字全息实验研究

搭建了基于空间光调制器的非相干光照明全息记录系统,建立了系统的波动数学模型,获得了系统的点扩展函数、横向放大率以及再现距离的具体表达式。实验给出了分辨率板的相移数字全息图和重建像,然后对两个非荧光骰子进行全息拍摄,在不同平面实现了数字聚焦。给出了该系统下的彩色全息实验结果。结果表明这种非相干光照明全息系统可以快速获取三维物体的全息图,再现时结合相移算法可以得到无零级像和共轭像的高质量重建像。     

物体经过毛玻璃成像复原机理研究

采用数字全息方法对物体经毛玻璃成像复原机理进行研究。首先，在建立毛玻璃数学模型的基础上，提出了消除毛玻璃干扰的理论算法。然后，利用数字全息再现原理建立了数学模型，并搭建了实验光路，将经毛玻璃后的物体信息通过消除毛玻璃干扰算法后进行再现，并将消除毛玻璃干扰前后的全息图进行了对比分析。最后，通过仿真与实验验证了理论算法和实验方法的正确性，对于物体透过复杂介质成像研究有着极其重要的参考价值。     

离轴无透镜傅里叶变换数字全息三维物场重建

再现物体的三维信息是全息成像的特点,正确的相位信息对测量的准确性有着重要的意义.本文研究了离轴无透镜傅里叶变换数字全息中,用非原参考光再现三维物体而引入的相位畸变问题,通过详细的理论分析,得出相应的相位畸变表达式.根据畸变表达式,可以校正畸变的再现像光场分布,得到正确的再现像光场分布,重建正确的三维图像,并通过计算机模拟证明了分析的正确性.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.