适用于低压EEPROM编程的双电荷泵电路系统设计

设计了一款应用于低电源电压EEPROM的双电荷泵电路结构,提供存储单元编程所需的高压。基于传统Dickson结构,设计主次两级电荷泵结构：次级电荷泵为两级升压结构,输出电压可增强时钟的驱动能力、抬高其高电平;主级电荷泵采用传输管栅压提升的结构及驱动能力增强的时钟对内部电容进行充放电,提高主级电荷泵每级的传输能力及整体电路的工作效率,最终实现低电源电压下产生高压的目的。同时,通过使能时序控制稳压系统电路,保证了输出电压的稳定性。仿真结果显示,电荷泵升降压速度快、纹波小、效率高。该双电荷泵电路已实际应用于芯片设计中,采用0.18μm EEPROM工艺流片,输出高压稳定,达到设计要求,并且性能良好。     

一种快速升压的片上电荷泵电路设计

设计了一种快速升压的片上电荷泵电路,该电路由时钟产生电路和电荷泵核组成。电荷泵核基于传统Dickson电荷结构,在前四级引入预充管,增加节点初始电压,提高电荷泵升压速度,时钟产生电路能产生占空比约为30%的稳定时钟信号,用它驱动电荷泵核可以减小充放电流失配等问题,进一步提高电荷泵升压速度。基于华虹NEC 0.35μs CMOS工艺,HSPICE仿真结果显示：在5V电源电压下,电荷泵仅需要57.625μs就可以从0V升压到20V,比传统的MOS管Dickson电荷泵快了20.055μs。     

MEMS麦克风中新型电荷泵的设计

设计了一款应用于MEMS麦克风的电荷泵电路。在动态的电荷传输开关型电荷泵中,增加了时钟电平倍增电路和负反馈电路,使得电荷泵在工艺偏差、温度以及电源电压变化时能够输出稳定的高压。电路基于0.3 μm CMOS工艺实现,Spectre仿真结果表明,在1.6~3.6 V电源电压范围及所有工艺角下,电荷泵能够输出偏差在±5%以内的14 V高压,与相同条件下的传统静态电荷传输型电荷泵相比,升压单元减少了33%,有效提高了效率,节省了面积。     

一种应用于MEMS麦克风偏置电路的电荷泵设计

MEMS麦克风需要一个高于10 V的偏置电压才能工作,这个高电压一般由内部电荷泵电路产生.在传统Dickson电荷泵结构的基础上,提出一种改进的电荷泵结构.它首先将非重叠时钟的幅度加倍,然后用幅度加倍的时钟作为电荷泵的驱动时钟,取得了明显的升压效果.Hspice仿真结果表明,电源电压为1.4V时,6级二极管-电容升压单元就可以实现10.7674 V的输出电压.与传统的Dickson升压电路相比,改进型电荷泵的升压单元减少了4级,且其核心部分的面积减小了21％,功耗降低了40％(参考SMIC 0.35 μm CMOS工艺).     

一种低电压、高增益电荷泵

电荷泵在低压电路中扮演着重要的角色。作为片上电荷泵,其面临的主要问题是:电压增益、电压纹波和面积效率。该文提出了一种新型的电荷泵电路,它采用辅助电荷泵、电平转移电路结构来产生不同摆幅的时钟,该时钟被用来驱动开关管的栅极,以有效控制开关管的电导,提高电压增益。由于采用PMOS管作为开关管,传输过程中避免了阈值电压损失。仿真结果显示,与以往文献中提到的电荷泵结构相比,该电荷泵具有更高的电压增益,开启时间短,纹波小,在低压应用环境优势更为突出。     

一种低压高效的电荷泵设计北大核心CSCD

针对于传统电荷泵结构存在的阈值压降和受体效应影响的问题,在传统四相时钟电荷泵结构基础上通过增加衬底自举电容及辅助管增大传输管的衬底电压,降低体效应的影响,提升了电荷泵电路的转换效率,降低了电荷泵电路的启动电压.电荷泵电路基于TSMC 0.18μm CMOS工艺进行设计与仿真,仿真结果表明:改进型电荷泵的工作电压可以低至0.8V,转换效率76.25%.     

用于10M/100M以太网的NRZ数据时钟恢复电路

文中采用双环系统,基于改进的Hogge鉴相器,差分电荷泵,以及一个四级环形压控振荡器实现了一种全集成的CMOS时钟恢复电路,时钟恢复的频率为125 MHz,该电路最大程度上的减小了电荷注入、电荷分享等寄生效应的影响.增加一个偏置电路使各模块的工作电源电压降低到2.94 V.整个芯片的功耗降低10%.     

用于相变存储器的超低输出纹波2X/1.5X电荷泵

本文针对相变存储器编程驱动电路,提出了一种超低输出电压纹波的开关电容型电荷泵。该电荷泵可根据输入电压的不同,自适应工作在2X/1.5X升压模式之间,以获得更高的电源转换效率。相比于传统开关电容型电荷泵,在充电阶段泵电容被充电至预先设定的电压值Vo-VDD(Vo为预期的输出电压);放电阶段,泵电容串联在输入电压VDD与输出端,通过此方法将电荷泵输出端电压稳定在Vo,并有效的降低了由于电荷分享所造成的输出纹波。在中芯国际40nm标准CMOS工艺模型下,对电路进行了仿真验证,结果表明在输入电压为1.6-2.1V,输出2.5V电压,最大负载电流为10mA,输出电压纹波低于4mV,电源效率最高可达91%。     

应用于30 GHz锁相环的高性能电荷泵设计

基于IBM 0.13 μm CMOS工艺,设计了一款应用于30 GHz低杂散锁相环的电荷泵电路。该电荷泵采用带隙基准为电流源和运算放大器提供偏置,采用复制支路和比较器实现上下电流源的静态匹配,将输入输出轨对轨运算放大器接成单位增益缓冲器来避免电荷共享效应,通过加入互补开关管来减小时钟馈通和电荷注入效应。后仿真结果表明,在电源电压为2.5 V,电荷泵电流为200 μA,调谐范围为0.5~2 V时,充放电电流的最大静态失配小于0.1%;在750 kHz环路带宽下,计算得到锁相环参考杂散小于-72 dBc,满足IEEE 802.15.3c标准对60 GHz本振信号杂散的要求。     

一种用于LCD驱动的高效电荷泵的设计

电荷泵是一种流行的获取高于供电电源的直流电压转换技术.传统的电荷泵电路采用二极管连接的NMOS管级联来获取较高的电压,由于阈值电压的作用,这种电荷泵的提升效率会随着级数的增加而下降.为了提高效率,文中提出了一种提升5倍电压的采用液晶显示器(LCD)驱动的新型电荷泵结构.特别设计了开关管的栅控电路,消除了阈值电压对电压提升效率的影响,并且通过对开关管尺寸和控制时钟的进一步优化,提高了电压转换效率,降低了功耗,特别适合于小尺寸LCD驱动的需要.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.