一种应用于GNSS接收机的低噪声和低杂散频率综合器

A low phase noise and low spur phase locked loop （PLL） frequency synthesizer for use in global navigation satellite system （GNSS） receivers is proposed. To get a low spur, the symmetrical structure of the phase frequency detector （PFD） produces four control signals, which can reach the charge pump （CP） simultaneously, and an improved CP is realized to minimize the charge sharing and the charge injection and make the current matched. Additionally, the delay is controllable owing to the programmable PFD, so the dead zone of the CP can be eliminated. The output frequency of the VCO can be adjusted continuously and precisely by using a programmable LC-TANK. The phase noise of the VCO is lowered by using appropriate MOS sizes. The proposed PLL frequency synthesizer is fabricated in a 0.18 μm mixed-signal CMOS process. The measured phase noise at 1 MHz offset from the center frequency is -127.65 dBc/Hz and the reference spur is -73.58 dBc.     

A 9.8-mW 1.2-GHz CMOS frequency synthesizer with a low phase-noise LC-VCO and an I/Q frequency divider

A 1.2 GHz frequency synthesizer integrated in a RF receiver for Beidou navigation is implemented in standard 0.18μm CMOS technology.A distributed biased varactor LC voltage-controlled oscillator is employed to achieve low tuning sensitivity and optimized phase noise performance.A high-speed and low-switching-noise divider-by-2 circuit based on a source-coupled logic structure is adopted to generate a quadrature(I/Q) local oscillating signal.A high-speed 8/9 dual-modulus prescaler(DMP),a programmable-delay phase frequency detector without dead-zone problem,and a programmable-current charge pump are also integrated into the frequency synthesizer. The frequency synthesizer demonstrates an output frequency from 1.05 to 1.30 GHz,and the phase noise is-98.53 dBc/Hz at 100-kHz offset and -121.92 dBc/Hz at 1-MHz offset from the carrier frequency of 1.21 GHz. The power dissipation of the core circuits without the output buffer is 9.8 mW from a 1.8 V power supply.The total area of the receiver is 2.4×1.6 mm~2.     

采用PMOS底部电流源的低功耗电流自调整压控振荡器

This paper presents the design and implementation of a current self-adjusted VCO with low power consumption. In the proposed VCO, a bottom PMOS current source instead of a top one is adopted to decrease the tail noise. A current self-adjusted technique without additional external control signals is taken to ensure the VCO starts up in the whole band while keeping the power consumption relatively low. Meanwhile, the phase noise of the VCO at the low frequency （high Cvar） can be reduced by the technique. The circuit is implemented in 0.18 μm CMOS technology. The proposed VCO exhibits low power consumption of 〈1.6 mW at a 1.5 V supply voltage and a tuning range from 11.79 to 12.53 GHz. The measured phase noise at 1 MHz offset from the frequency 11.79 GHz is-104.7 dBc/Hz, and the corresponding FOM is -184.2 dBc/Hz.     

A low reference spur quadrature phase-locked loop for UWB systems

This paper presents a low phase noise and low reference spur quadrature phase-locked loop(QPLL) circuit that is implemented as a part of a frequency synthesizer for China UWB standard systems.A glitch-suppressed charge pump(CP) is employed for reference spur reduction.By forcing the phase frequency detector and CP to operate in a linear region of its transfer function,the linearity of the QPLL is further improved.With the proposed series-quadrature voltage-controlled oscillator,the phase accuracy of the QPLL is guaranteed.The circuit is fabricated in the TSMC 0.13μm CMOS process and operated at 1.2-V supply voltage.The QPLL measures a phase noise of -95 dBc/Hz at 100-kHz offset and a reference spur of -71 dBc.The fully-integrated QPLL dissipates a current of 13 mA.     

具有自校准压控振荡器和精确自动频率校准算法的低噪声频率合成器

A low noise phase locked loop （PLL） frequency synthesizer implemented in 65 nm CMOS technology is introduced. A VCO noise reduction method suited for short channel design is proposed to minimize PLL output phase noise. A self-calibrated voltage controlled oscillator is proposed in cooperation with the automatic frequency calibration circuit, whose accurate binary search algorithm helps reduce the VCO tuning curve coverage, which reduces the VCO noise contribution at PLL output phase noise. A low noise, charge pump is also introduced to extend the tuning voltage range of the proposed VCO, which further reduces its phase noise contribution. The frequency synthesizer generates 9.75-11.5 GHz high frequency wide band local oscillator （LO） carriers. Tested 11.5 GHz LO bears a phase noise of-104 dBc/Hz at 1 MHz frequency offset. The total power dissipation of the proposed frequency synthesizer is 48 mW. The area of the proposed frequency synthesizer is 0.3 mm^2, including bias circuits and buffers.     

一种平衡设计压控振荡器和自动频率校准的快速锁定宽带频率综合器

A wideband fractional-N frequency synthesizer is implemented in a 65 nm CMOS process.It employs a wideband LC voltage-controlled oscillator(VCO) with optimized VCO gain(KVCO/and a sub-band step to improve automatic frequency calibration(AFC) efficiency at negligible expense of phase noise performance.An agile AFC is realized by direct mapping based on the division ratio,and optional redundant counting and comparing calibration is introduced accommodating PVT variations,which samples the reference clock using the prescaled VCO output as a discriminating clock.A charge pump with switched charging current is adopted to compensate for the loop bandwidth variation.Measurement results show this directly-mapped AFC locates the target sub-band in 100 ns and only needs 1.2 s for redundant calibration.The frequency synthesizer spans a frequency range from 0.62 to 1.52 GHz,with phase noise of-86 dBc/Hz at 10 kHz offset and-122 dBc/Hz at 1 MHz offset while consuming 9.76 mA from a 1.2 V supply.     

Harmonic-suppressed quadrature-input frequency divider for OFDM systems

A fully balanced harmonic-suppressed quadrature-input frequency divider is proposed. The frequency divider improves the quadrature phase accuracy at the output by using both input I/Q signals. Compared with conventional dividers, the circuit achieves an output I/Q phase sequence that is independent of the input I/Q phase sequence. Moreover, the third harmonic is effectively suppressed by employing a double degeneration technique. The design is fabricated in TSMC 0.13-μ m CMOS and operated at 1.2 V. While locked at 8.5 GHz, the proposed divider measures a maximum third harmonic rejection of 45 dB and a phase noise of -124 dBc/Hz at a 10 MHz offset. The circuit achieves a locking range of 15% while consuming a total current of 4.5 mA.     

Harmonic-suppressed quadrature-input frequency divider for OFDM systems

A fully balanced harmonic-suppressed quadrature-input frequency divider is proposed.The frequency divider improves the quadrature phase accuracy at the output by using both input I/Q signals.Compared with conventional dividers,the circuit achieves an output I/Q phase sequence that is independent of the input I/Q phase sequence.Moreover,the third harmonic is effectively suppressed by employing a double degeneration technique. The desig n is fabricated in TSMC 0.13-μm CMOS and operated at 1.2 V.While locked at 8.5 GHz,the proposed divider measures a maximum third harmonic rejection of 45 dB and a phase noise of-124 dBc/Hz at a 10 MHz offset.The circuit achieves a locking range of 15%while consuming a total current of 4.5 mA.     

A wideband 0.13 μm CMOS LC-VCO for IMT-advanced and UWB applications

This paper presents an LC voltage controlled oscillator(VCO) in a dual-band frequency synthesizer for IMT-advanced and UWB applications.The switched current source,cross-coupled pair and noise filtering technique are adopted in this VCO design to improve the performance of the phase noise,power consumption,voltage amplitude,and tuning range.In order to achieve a wide tuning range,a reconfigurable LC tank with 4 bits switch control is adopted in the core circuit design.The size of the entire chip with pad is 1.11 0.98 mm2.The test results show that the current dissipation of the VCO at UWB and IMT-Advanced band is 3 mA and 4.5 mA in a 1.2 V supply.The tuning range of the designed VCO is 3.86-5.28 GHz and 3.14-3.88 GHz.The phase-noise at 1 MHz frequency offset from a 3.5 GHz and 4.2 GHz carrier is-123 dBc/Hz and-119 dBc/Hz,respectively.     

用于无线传感器网络节点的小数分频频率综合器

This paper presents a fractional-N frequency synthesizer for wireless sensor network(WSN) nodes. The proposed frequency synthesizer adopts a phase locked loop(PLL) based structure, which employs an LC voltagecontrolled oscillator(VCO) with small VCO gain(KVCO) and frequency step(fstep) variations, a charge pump(CP)with current changing in proportion with the division ratio and a 20-bit △∑ modulator, etc. To realize constant KVCO and fstep, a novel capacitor sub-bands grouping method is proposed. The VCO sub-groups’ sizes are arranged according to the maximal allowed KVCOvariation of the system. Besides, a current mode logic divide-by-2 circuit with inside-loop buffers ensures the synthesizer generates I/Q quadrature signals robustly. This synthesizer is implemented in a 0.13 m CMOS process. Measurement results show that the frequency synthesizer has a frequency span from 2.07 to 3.11 GHz and the typical phase noise is 86:34 d Bc/Hz at 100 k Hz offset and 114:17 d Bc/Hz at 1 MHz offset with a loop bandwidth of about 200 k Hz, which meet the WSN nodes’ requirements.     

用于TFT-LCD驱动芯片的省面积高效率内置电荷泵

An area-saving and high power efficiency charge pump is proposed, and methods for optimizing the operation frequency and improving the power efficiency are discussed. Through sharing coupling capacitors the proposed charge pump realizes two DC-DC functions in one circuit, which can generate both positive and negative high voltages. Due to sharing of the coupling capacitors, as compared with a previous charge pump designed by us for a TFT-LCD driver IC, the die area and the amounts of necessary external capacitors are reduced by 40% and 33%, respectively. Furthermore, the charge pump＇s power efficiency is improved by 8% as a result of employing the new topology. The designed circuit has been successfully applied in a one-chip TFT-LCD driver IC implemented in a 0.18 μm low/mid/high mixed-voltage CMOS process.     

重离子诱导的电荷共享以及MBU敏感性的温度特性

The temperature dependence of charge sharing in a 130 nm CMOS technology has been investigated over a temperature range of 200 to 420 K.Device simulation results show that the charge sharing collection increases by 66%-325% when the temperature rises.The LETth of a MBU in two SRAM cells and one DICE cell is also quantified.Besides charge sharing, the circuit response＇s temperature dependence also has a significant influence on the LETth.     

电流模线性控制电荷泵的研究与设计

To meet the demands for a number of LEDs,a novel charge pump circuit with current mode control is proposed.Regulation is achieved by operating the current mirrors and the output current of the operational transconductance amplifier.In the steady state,the input current from power voltage retains constant,so reducing the noise induced on the input voltage source and improving the output voltage ripple.The charge pump small-signal model is used to describe the device’s dynamic behavior and stability.Analytical predictions were verified by Hspice simulation and testing.Load driving is up to 800 mA with a power voltage of 3.6 V,and the output voltage ripple is less than 45 mV.The output response time is less than 8μs,and the load current jumps from 400 to 800 mA.     

采用动态环路调整的多模式低纹波低纹波电荷泵的设计

In order to improve efficiency and reduce the output ripple, a novel multi-mode charge pump is presented. The proposed charge pump includes dual-loop regulation topology-skip and linear modes. It consumes low quiescent current in skip mode for light loads, and produces low ripple in linear mode for heavy loads, which closes the gap between linear mode and skip mode with active regulation; a multi-mode charge pump employing the technique has been implemented in the UMC 0.6-μm-BCD process. The results indicate that the charge pump works well and effectively; it has low ripple with special regulation, and minimizes the size of the capacitance, then decreases the area of the PCB board. The adjustable output of the positive charge pump is 10-30 V, and the maximum output ripple is 100 mV when the load current is 200 mA. The line regulation is 0.2%/V, and load regulation is 0.075%.     

Software Radio——Software Radio： A Review of Design Considerations and Digital Hardware Choices

This paper reviews the requirements for Software Defined Radio （SDR） systems for high-speed wireless applications and compares how well the different technology choices available- from ASICs, FPGAs to digital signal processors （DSPs） and general purpose processors （GPPs） - meet them.     

EEFA： Energy Efficiency Frame Aggregation Scheduling Algorithm for IEEE 802.11n Wireless Network

Packet size is restricted due to the error-prone wireless channel which drops the network energy utilization. Furthermore, the frequent packet retransmissions also lead to energy waste. In order to improve the energy efficiency of wireless networks and save the energy of wireless devices, EEFA （Energy Efficiency Frame Aggregation）, a frame aggregation based energy-efficient scheduling algorithm for IEEE 802.11n wireless network, is proposed. EEFA changes the size of aggregated frame dynamically according to the frame error rate, so as to ensure the data transmission and retransmissions completed during the TXOP and reduce energy consumption of channel contention. NS2 simulation results show that EEFA algorithm achieves better performance than the original frame-aggregation algorithm.     

SDN-Based Data Offioading for 5G Mobile Networks

The rapid growth of 3G/4G enabled devices such as smartphones and tablets in large numbers has created increased demand formobile data services.Wi-Fi offloading helps satisfy the requirements of data-rich applications and terminals with improved multi-media.Wi-Fi is an essential approach to alleviating mobile data traffic load on a cellular network because it provides extra capaci-ty and improves overall performance.In this paper,we propose an integrated LTE/Wi-Fi architecture with software-defined net-working(SDN)abstraction in mobile backhaul and enhanced components that facilitate the move towards next-generation 5G mo-bile networks.Our proposed architecture enables programmable offloading policies that take into account real-time network condi-tions as well as the status of devices and applications.This mechanism improves overall network performance by deriving real-time policies and steering traffic between cellular and Wi-Fi networks more efficiently.     

应力和电阻率可控的适用于高品质因子MEMS器件的原位掺硼LPCVD多晶硅薄膜

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition （LPCVD） are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems （MEMS） devices, especially in high resonance frequency （high-f） and high quality factor （high-Q） MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process （〉 1000 ℃）, and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.     

A low power 3-5 GHz CMOS UWB receiver front-end

A novel low power RF receiver front-end for 3-5 GHz UWB is presented. Designed in the 0.13μm CMOS process, the direct conversion receiver features a wideband balun-coupled noise cancelling transconductance input stage, followed by quadrature passive mixers and transimpedance loading amplifiers. Measurement results show that the receiver achieves an input return loss below -8.5 dB across the 3.1-4.7 GHz frequency range, maximum voltage conversion gain of 27 dB, minimum noise figure of 4 dB, IIP3 of -11.5 dBm, and IIP2 of 33 dBm. Working under 1.2 V supply voltage, the receiver consumes total current of 18 mA including 10 mA by on-chip quadrature LO signal generation and buffer circuits. The chip area with pads is 1.1 × 1.5 mm^2.     

适用于双金属栅集成的TaN湿法腐蚀

Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.