椭圆曲线密码处理器的高效VLSI设计与实现

采用复合武硬件设计方法，通过数学公式推导和电路结构设计，完成了一款GF（2m）域椭圆曲线密码处理器的高效VLSI实现。以低成本为目标，对算术逻辑模块的乘法、约减、平方、求逆，以及控制电路模块都进行了优化设计。按照椭圆曲线密码的不同运算层次，设计了不同层次的控制电路。该处理器综合在中芯国际SMIC0．18μm标准工艺库上．比相关研究的芯片面积节省48％，同时保证了很快的速度。     

SM2高速双域 Montgomery 模乘的硬件设计

作为由国家密码管理局公布的SM2椭圆曲线公钥密码算法的核心运算,模乘的实现好坏直接决定着整个密码芯片性能的优劣．Montgomery模乘算法是目前最高效也是应用最为广泛的一种模乘算法．本文基于Mont-gomery模乘算法,设计了一种高速,且支持双域（GF（p）素数域和GF（2m ）二进制域）的Montgomery模乘器．提出了新的实现结构,以及一种新型的W allace树乘法单元．通过对模块合理的安排和复用,本设计极大的缩小了时间消耗与硬件需求,节省了大量的资源．实现256位双域模乘仅需0．34μs ．     

素数域参数可选高速椭圆曲线密码芯片ASIC实现

设计了一款素数域高速椭圆曲线密码芯片,电路采用ASIC实现,支持六种椭圆曲线密码协议:密钥产生,密钥协商,数字签名,数字认证,加密及解密,并且支持椭圆曲线参数的用户配置.在典型情况下,芯片每秒可实现10 526次点乘运算,8 333次数字签名以及4 761次认证,性能优于素数域其他ECC设计.     

一种新型硬件可配置公钥制密码协处理器的VLSI实现

提出了一种新型的硬件可配置的密码协处理器，同时适用于GF(p)和GF(2^m)两种域，可以实现RSA和ECC两种目前主流的加密算法。同时又具备硬件可配置的特点，可以完成32—512bit的模乘运算而无需对硬件做任何修改。本文的密码协处理芯片用TSMC0．35μm标准单元库综合，可以工作在100MHz时钟下，等效单元45k等效门，512bit的模乘运算速度可以达到190kbit／s，一次椭圆曲线上的233bit的点加运算只需18μs。     

参数可选的高速椭圆曲线密码专用芯片的VLSI实现

研究了椭圆曲线密码体制的VLSI实现问题。从点乘运算层与群运算层调度到有限域上的高速运算方法等方面给出了一些提高椭圆曲线上点乘运算的新方案；提出了一种域与曲线参数可选择的高速椭圆曲线密码专用芯片VLSI新结构。基于0．6mm单元库，芯片面积约为36mm2。综合后仿真结果表明：设计芯片能够有效地完成数字签名与身份验证完整流程，在20MHz下平均每次签名时间为62．67ms,高于目前报道的其它同类芯片。     

基于无线网络安全的ECC点积算法研究

椭圆曲线因其自身的优越性应用于无线网络安全中。椭圆曲线密码应用中常使用的两类椭圆曲线为定义在有限域GF（P）上的素曲线和在有限域GF（2^m）上的二元曲线。素曲线计算因不需二元曲线所需要的位混淆运算，常应用于软件：而对硬件应用而言，则最好使用二元曲线，它可用很少的门电路来得到快速且功能强大的密码体制．在椭圆曲线加密体制中，NP问题是制约其应用和发展的瓶颈的核心问题。文中提出了基于无线网络安全的GF（2^m）域上的椭圆曲线点积算法的改进。且本文将椭圆曲线的基点和随机点的点积算法区别开来，具有重要的现实实现意义。     

基于FPGA技术的GF(2m)域乘法器的研究和设计

椭圆曲线密码体制以其密钥短、安全强度高的优点获得了广泛的重视和应用,而GF(2m)有限域乘法运算是该密码体制最主要的运算.本文研究了基于FPGA芯片的多项式基乘法器的快速设计方法,并给出了面积与速度的比较和分析.     

高性能可扩展公钥密码协处理器研究与设计

 本文提出了一种高效的点乘调度策略和改进的双域高基Montgomery模乘算法,在此基础上设计了一种新型高性能可扩展公钥密码协处理器体系结构,并采用0.18μm 1P6M标准CMOS工艺实现了该协处理器,以支持RSA和ECC等公钥密码算法的计算加速.该协处理器通过扩展片上高速存储器和使用以基数为处理字长的方法,具有良好的可扩展性和较强的灵活性,支持2048位以内任意大数模幂运算以及576位以内双域任意椭圆曲线标量乘法运算.芯片测试结果表明其具有很好的加速性能,完成一次1024位模幂运算仅需197μs、GF(p)域192位标量乘法运算仅需225μs、GF(2^m)域163位标量乘法运算仅需200.7μs.     

小面积、低能耗的GF（2^m）域ECC模运算VLSI实现

以面积、能耗为优先准则,研究了GF(2m)域椭圆曲线密码(ECC)模运算VLSI的实现.选择GF(2163)上固定多项式基,引入了简单有效的快速模平方算法和改进的模逆算法,利用串行结构分别实现了模乘、模平方与模逆模块.基于UMC 0.25μm 1.8V工艺库的仿真结果表明,提出的串行模乘、快速组合逻辑模平方和快速模逆VLSI实现方式,通过牺牲域多项式灵活性,能够有效地减小面积、降低能耗,适合于资源受限的ECC系统.     

超椭圆曲线离散对数的Weil Descent代数攻击的分析

本文首先介绍了Galbraith的Weil Descent代数攻击方法，然后对定义在GF（q^n)上的形如y^2 xy=f(x)的HCDLP能否用Weil Descent代数方法攻击作了详细讨论，作为例子，研究了GF（4）和GF（8）上的这类曲线。得到结论：（1）Weil Descent代数攻击法只能适用于极少部分这类超椭圆曲线；（2）当亏格或基域增大时，Weil Descent方法攻击成功的概率趋向于0。所以说Weil Descent代数攻击法对建立在GF（2^n)上的这类超椭圆曲线密码体制并没有太大的威胁。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.