基于机器视觉的激光焊接熔池图像处理与特征提取

基于机器视觉,对激光焊接熔池图像处理与特征提取进行了研究.结果表明,分析光纤激光深熔焊接熔池监测结果,包括熔透状态、焊接宽度焊缝偏差跟踪监测及线监测.在不同焊接速度及焊接功率条件下,搭建焊接监测系统可实现光纤激光深熔焊接熔池的实时监测,其精度可达到激光焊接的要求.熔池和热影响区在深熔焊接过程中,焊接速度变化对其焊接过程...     

激光焊接钛合金薄板时的功率控制

用Nd:YAG脉冲激光器对0.5 mm厚TC4钛合金薄板进行了焊接实验。设计了与光路同轴的机器视觉系统,并利用高速电荷耦合器件(CCD)实时获取焊斑图像。通过采用辅助照明光源有效提高了焊斑成像质量。采用基于细胞神经网络的算法进行焊斑边缘提取。通过对焊斑图像的分析可以获得薄板穿孔或熔深不足的信息,以此作为反馈控制信号对脉冲激光功率进行实时调整。实验证明,该方法可有效减少薄板穿孔和熔深不足缺陷的发生,提高TC4钛合金薄板激光焊接的质量。     

基于机器视觉的激光焊接焊缝智能检测研究

为了优化激光焊接质量,设计了基于机器视觉的激光焊接焊缝智能检测方法。首先利用机器视觉技术设计扫描成像单元,在获得基础的激光焊接焊缝图像后,对图像实施离焦误差校正处理。然后在补偿图像缺陷的基础上,对激光焊接焊缝图像作放大处理,设计扩束准直光路与动态聚焦光路识别焊缝特征信息,从而完成对焊缝的智能检测。实验结果表明：该方法可以能够获得更有效的焊缝信息,有利于提高激光焊接质量。     

焊接速度对高速激光焊熔池流动行为的影响

高速激光焊的多种典型缺陷形成都与熔池流动有关,深入了解熔池流动行为有助于理解高速焊缺陷的形成机理。采用光纤激光进行高速焊接试验,分别研究在功率和热输入一定的条件下焊接速度对熔池流动行为的影响。采用高速摄像实时观察熔池表面的流动行为,通过Ti示踪元素考察熔池内部的流动行为。结果表明,焊接速度提高,熔池表面液态金属向熔池尾部流动的距离增加,熔池内部的中心部位液态金属向熔池底部和尾部流动的距离增加,熔池内部边缘处液态金属流动受焊接速度的影响较小。提高焊接速度,金属蒸气喷出方向与熔池表面的夹角减小,金属蒸气对小孔后沿冲击力的水平分量增大,导致熔池表面液态金属向熔池尾部流动的驱动力增大,流动距离因而增加。     

CO2激光焊同轴视觉系统及熔透状态检测的研究

本文对CO2 激光深熔焊的CO2 激光、等离子体辐射和熔池辐射光谱进行了分析和实验研究 ,在此基础上研制成功了基于具有特殊功能镀膜的分光镜、综合滤光系统和CCD摄像机的CO2 激光焊同轴视觉系统 ,解决了熔池图像同轴检测和等离子体强辐射干扰等关键技术 ,较清晰地实时显示俯视小孔穿透状态的二维图像。发现了焊接过程中焊缝熔透状态由“未熔透”或“仅熔池透”变为“适度熔透 (小孔穿透 )”时小孔图像变化的规律 ,获得了理想熔透状态的图像特征 ,为进一步进行熔透闭环控制打下了基础。     

基于CCD的激光熔覆熔池宽度的在线检测研究

为了研究激光熔覆熔池尺寸,采用CCD摄像机和VISUAL C++平台自主开发的图像处理软件,建立了一套针对激光熔覆熔池宽度的在线检测系统,提取了熔池边缘和几何特征参量,通过标定试验测定系统的校正系数,在线获取了熔覆层的宽度。结果表明,该系统能比较准确地实现熔池宽度的在线检测,为实时检测激光熔覆熔池表面质量提供了一个有效的工具。     

激光深熔焊熔池及小孔的检测

激光深熔焊熔池-小孔包含丰富的反映熔深的信息.本文建立了基于视觉的熔池-小孔同轴检测系统,拍摄了不同焊接速度下熔池-小孔的清晰的图像,分析了熔池宽度、小孔直径随焊接速度的变化规律研究发现,小孔直径随焊接速度的增大先增加后减小,熔池宽度随焊接速度的增大而减小.     

同轴监测激光深熔焊熔池小孔的特征分析

为了研究激光焊接工艺参量以及焊接材料对熔池、小孔形貌的影响,搭建了激光焊接同轴监测系统,对比研究了有无辅助光源和不同工艺条件下、采用中心波长分别为532nm和808nm窄带滤光片同轴监测的熔池、小孔图像特征。结果表明,采用808nm激光辅助光源照明和808nm窄带滤光片,可清晰地拍摄到熔池、小孔以及穿透孔特征图像;相同的工艺条件下,熔池变化小,小孔动态波动且波动幅度小,穿透孔的时变动态特征较小孔则明显不同;熔池宽度随激光功率的增加而增大,随焊接速率增大而减小;不同材料激光焊接的熔池、小孔和穿透孔的同轴监测验证了本监测系统的稳定性。该研究对激光焊接质量实时监控有理论指导意义。     

激光电弧复合焊视觉传感系统及熔池背面图像的检测

在激光电弧(MIG)复合对接焊中，焊缝成形尤其焊缝根部(反面)成形状况的好坏，是衡量复合焊焊接质量及其适应能力的重要指标。为研究视觉信号和焊缝根部成形的关系，建立了由辅助照明光源、可触发拍摄的CCD摄像机、以电弧焊接电流为信号源的触发电路以及图像采集卡组成的视觉传感系统。通过在工件底面拍摄的方法，得到了清晰的熔池背面实时图像。分析了拍摄过程的成像机制，并开发了一套算法实时检测背面熔宽、坡口间隙宽度以及熔池相对坡口的偏移量，结果表明实时检测到的熔宽和实际的焊缝背面宽度有很好的对应关系。     

激光散射式技术在钢球表面缺陷检测中的应用

针对目前钢球表面反射率高、缺陷特征难以提取等问题,提出了一种基于机器视觉技术,利用钢球表面激光散射图片快速检测表面缺陷的方法。介绍了系统的结构和检测原理,搭建了系统检测平台。分析了利用形态学、边缘连接等图像处理算法提取缺陷散斑,利用圆度因子和延长因子判别缺陷类型的处理过程,并基于LabVIEW软件平台,选取不同缺陷的钢球样本进行了试验测试。实际试验表明,利用钢球表面激光散射图可以有效提取表面凹坑、麻点、刻痕等缺陷信息,系统可以快速准确地识别钢球的表面缺陷,可用于钢球表面缺陷的在线检测,具有很好的实用价值和应用前景。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.