基于灵活应用提速能力构建可运营的宽带智能网络

基于宽带网络沦为基础管道、收益低廉的现状,提出开放宽带网络能力,在现有整体智能提速功能的基础上,开放应用提速能力,向SP/CP提供差异化业务保障能力,提升优质业务使用感知,将宽带网络打造为可快速灵活部署的运营型智能管道。     

由智能管道能力开放看运营商与OTT的竞合

文章分析了OTT时代移动通信产业现状与特点,对4G智能管道的QoS能力管控进行了研究,提出一个基于智能管道能力开放的OTT产业合作体系。该体系从运营商网络核心优势出发,从与OTT的流量合作、自服务、实时QoS控制三个层面分别介绍了智能管道QoS能力开放创造的价值,帮助移动运营商提升OTT时代的用户感知,从OTT业务发展的旁观者转变为OTT产业升级的获益者。     

运营商应稳妥推进智能管道策略的关键能力建设

智能管道是运营商应对当前通信行业挑战,避免沦为"哑管道"的一种策略。实施智能管道策略需要建设的基本能力包括建设差异化的传输能力,以API形式开放运营商的基础资源等。管道的差异化传输能力具有可视、可控、可管的特性,可实现对稀缺移动网络资源的有效管理;API开放有助于运营商汇聚产业链优质资源,涉及自身核心优势与用户隐私可建立API的分级管理体系。     

深度包检测(DPI)技术浅谈及应用

DPI(深度包检测)是一种智能管道的感知技术,随着电信运营商提出"智能管道"的概念,DPI技术在电信网络中的应用越来越广泛。文章介绍了DPI的概念,系统架构有串接、并接和串并一体化方式,系统工作包括数据采集、数据分析、数据统计和控制,主要实现全业务分析与控制、用户行为分析、广告推送等功能,并提出了在电信运营商的应用场景。     

运营商网络能力开放研究

主要针对运营商近年来逐步完善的网络智能管道能力,提出网络能力对外开放的思路和能力开放平台的体系架构,并以移动互联网能力开放为例,详细梳理网络能力和业务场景,最后提出移动互联网能力开放的平台架构。     

三大T的智能管道探索

电信运营商的智能管道策略至少包括两个关键要素:一是须提供独特的网络服务能力;二是要以基础架构与能力开放为基础,创新商业模式。在全球移动互联网流量激增的大环境下,不甘沦为"哑管道"的国内外运营商通过资费调整、流量梳理、网络升级甚至商业模式转型等多种手段积极应对,形成了别具特色、各有侧重的智能管道策略。     

江苏电信智能管道运营探索与实践

针对当前行业发展态势,分析互联网领域发展趋势以及电信运营商所面临的挑战,介绍江苏电信在智能管道运营方面开展的创新与实践,以网络能力、运营支撑能力和运营能力三个层面为基础,开展业务感知、流量智能调度、能力开放、大数据运营等多方面研究及部署,通过拉升流量规模,提升流量价值,挖掘数据价值,按需提供服务,提升管道运营效率,以高效的运营支撑实现企业的健康可持续发展。     

移动网智能管道应用与实践探索

1移动智能管道理解移动网络介于用户终端和各类业务应用之间,处于非常重要的位置,但现有管道无法对业务和用户进行准确的区分和差异化的调度。这种"盲管道"的模式难以应对日渐增长的业务发展,运维部门缺乏有效的分析工具,无法解决客服中心提出的各种问题。智能管道作为提高网络效益、提升用户体验的重要手段,有效开展流量经营将成为运营商在移动互联网时代转型的战略关键。移动智能管道受到如此的重视,主要由于其具备的以下两个基础能力。多维感知:网络层可以多层次多维度地对     

智能管道发展及技术实现

深入剖析了运营商网络目前存在的主要问题,并在此基础上给出了智能管道的特征要素以及目标网络要求,同时从网络感知、动态调控两个方面对智能管道的解决方案进行了深入探讨并最终给出了智能管道发展建议。     

践行智能管道策略 积极探索智能运维

1引言作为国内第一个提出"智能管道"概念的企业,中国电信希望能够成为智能管道的主导者、综合平台的提供者、内容和应用的参与者,实现再次转型。"智能管道"概念提出后,各层面的专家进行了不同的解读,按照常规的理解,智能管道的主导者是指客户实现感知良好、运营管理方便、业务开通灵活,提供高速协同接入、资源自助指配、速率针对性保障的差异化服务,成为客户首选、综合能力最强的网络。如何在运维支撑领域去探索实践智能管道策略,打造一个智能化的运维服务支撑体系,     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.