Cr/Cu/Al/Cr薄膜电极的防氧化性能

采用Al作为Cu导电层的主要防氧化保护层,在普通浮法玻璃上利用磁控溅射和湿法刻蚀技术制备Cr/Cu/Al/Cr复合薄膜及其电极,研究不同的热处理温度对复合薄膜及其电极的结构、表面形貌和导电性能的影响。由于有Al层作为保护层,在热处理过程中,Al先与穿过Cr保护层的氧进行反应,从而可以更有效地保护Cu膜层在较高的温度下不被氧化,所制备的薄膜在经过600℃的热处理之后仍然具有较好的导电性能。而对于Cr/Cu/Al/Cr电极,侧面裸露的金属层在热处理过程中的氧化是其导电性能逐渐下降的主要原因,退火温度超过500℃之后,电极侧面裸露部分的氧化范围不断往电极的中间扩散,导致了薄膜电极导电性能显著恶化。虽然如此,Cr/Cu/Al/Cr薄膜电极在430℃附近仍然具有较好的导电性能,电阻率为7.3×10-8Ω.m,符合FED薄膜电极的要求。以此薄膜电极构建FED显示屏,通过发光亮度均匀性的测试验证了Cr/Cu/Al/Cr电极的抗氧化性。     

MCM—D介质膜及通孔工艺技术

MCM—D中薄膜介质层主要是用于多层布线的层间绝缘及埋置电容器介质层。介质膜的制备及刻蚀工艺是（MCM—D）薄膜多层布线工艺的基础和关键技术。聚酰亚胺具有高热稳定性、低介电系数、良好的平坦性及可加工性，是用的最多的薄膜介质材料。本文通过对聚酰亚胺的选择、旋涂、固化工艺控制解决了聚酰亚胺介质膜的制备及稳定性难题。通过精确控制腐蚀时间来实现通孔的湿法刻蚀。     

行波管金刚石输能窗片金属化影响因素分析

为制备行波管用金刚石输能窗片,分析金刚石金属化影响因素。采用粗糙度、拉曼光谱评估金刚石材料性能。采用酸洗、离子束刻蚀清洗金刚石表面。采用冲压掩膜、光刻掩膜防护非金属化区域。通过物理气相沉积制备Ti/Mo/Ni金属化层,并通过真空热处理方法制备TiC过渡层。结果表明:当金刚石内石墨的质量分数低于1%时,离子束刻蚀方法一方面去除金刚石表面杂质,另一方面将表面粗糙度从0. 256μm提升至0. 343μm;相比冲压掩模,光刻掩模降低界面孔隙率,减少了金属离子对掩模底层的污染,过渡区域宽度从200μm减少至10μm; 700℃保温过程促进了TiC的形成,提升了金属化层结合强度,促进了抗热冲击性能。     

外延纳米金刚石膜及其场发射特性

研究了纳米金刚石外延薄膜的制备方法及其场发射特性。采用电泳方法将粒径20nm以下的纳米金刚石微品沉积到Ti电极衬底上，用热丝CVD方法在纳米金刚石微晶薄膜上再外延生长一层含非晶碳金刚石薄膜。用Raman光谱研究了外延纳米金刚石薄膜的结构并在高真空条件下研究了其场发射特性。     

用于增强薄膜电池抗反射的微半球孔阵列研究

为了改善薄膜太阳电池表面抗反射特性,提高其对光的吸收率,在玻璃基体上制备了一种新的微纳抗反射结构,即微半球孔阵列,其周期约为10μm、深度约5μm。测试了微半球孔阵列结构的光学特性,得到这种结构的平均反射率约为1.7%,同平板无结构的玻璃相比,平均反射率降低了约6%。由测试结果可知,微半球孔阵列结构的抗反射性能得到改善,增强了薄膜太阳电池对光的捕获能力。采用紫外光刻、离子束刻蚀与湿法刻蚀相结合的工艺,整个制备工艺较简单,成本低廉,可以实现大面积应用。     

过渡层对类球状微米金刚石聚晶的场发射影响

在陶瓷衬底上通过磁控溅射方法镀上金属Ti层后,改用CH4为溅射气体制备一层碳化物过渡层,利用微波等离子体化学气相沉积(MPCVD)法制备出类球状微米金刚石聚晶薄膜。利用扫描电子显微镜、拉曼光谱和x-射线衍射分析了薄膜的结构和表面形貌。测试了类球状微米金刚石聚晶膜的场致电子发射特性,有过渡层制备的类球状微米金刚石聚晶膜的场发射开启电场仅为0.9V/μm,在2.5V/μm的发射电场下电流密度是10.8mA/cm2,而无过渡层制备的类球状微米金刚石聚晶膜的开启电场为1.27V/μm,在2.5V/μm的发射电场下电流密度是0.5mA/cm2。实验结果表明,有碳化物过渡层的类球状微米金刚石聚晶薄膜的场发射特性效果更好。     

大屏幕场致发射显示器薄膜型精细金属电极的研制

在洁净的玻璃基底溅射Cr-Cu-Cr复合薄膜,利用光刻和湿法刻蚀技术制备了大屏幕场致发射显示器薄膜型精细金属电极.讨论了不同腐蚀液对金属Cr刻蚀的影响,借助视频显微镜和台阶仪测试刻蚀后的电极形貌,结果表明,用质量比为6∶3∶100的KMnO4、NaOH和H2O的混合液腐蚀Cr膜的刻蚀速率平稳,刻蚀后的Cr电极边缘整齐,内向侵蚀少.此外,分析了FeCl3刻蚀液对Cu膜的刻蚀机理,讨论了刻蚀液在静置和循环条件下对制备FED薄膜型精细电极的影响,借助视频显微镜测试刻蚀后的电极形貌,结果表明,FeCl3刻蚀液在循环条件下刻蚀Cu膜速度均匀,刻蚀后电极边缘整齐.     

静电纺丝PANI/CNT/PEO超级电容器电极的性能研究

采用静电纺丝制备高性能、薄膜纤维结构电极的超级电容器。制备了均匀对称的三明治式固态超级电容器,其电极为静电纺丝制备的聚苯胺、多壁碳纳米管、聚氧化乙烯薄膜结构,电解质为聚乙烯醇和硫酸。研究了静电纺丝参数对纤维直径的影响,通过改变纺丝距离和溶液流量可以获得微孔薄膜纤维电极。当纺丝距离从80 mm提高到140 mm,纤维的平均直径从3.22μm降低到1.40μm,相对应电极的比电容从70 F/g上升到95 F/g。用这种纤维结构电极制备的超级电容器表现出很好的循环稳定性,用平均纤维直径1.40μm的电极制作的超级电容器在1 000次充放电之后比电容仍能保持90%。     

微加工工艺制作的静电吸片及其切向吸附力

针对静电吸附在微电子机械系统(MEMS)器件装配线中的潜在应用,试图研制一种单位面积上吸附力大和自身面积小的低工作电压静电吸片。通过介绍静电吸附现象的应用与传统静电吸盘,提出一种采用表面微加工工艺制作的双极性静电吸片。在分析静电吸片的结构与工作原理基础上,采用微加工工艺制备静电吸片,其中关键是在金属电极层上溅射法制备介质薄膜,之后采用微拉伸装置测量静电吸片的切向吸附力。实验结果表明:切向吸附力随着电极间隙的减小而增大;当施加电压150 V时,利用电极间隙为40μm的方形环式静电吸片吸附面积为4 mm×4 mm的硅片,最大切向吸附力为15 mN,即剪切压强为0.94 kPa,能够完成微器件的拾取与固定。     

多层式金刚石膜上沉积ZnO薄膜的研究

提出了一种制作ZnO/金刚石/硅结构声表面波器件的新工艺。利用热丝化学气相沉积(HFCVD)技术,通过逐次调整气压、碳源浓度等生长参数,在硅基片上沉积了晶粒尺寸逐层减小的、光滑的多层式金刚石薄膜,表面粗糙度低于20 nm,厚度大于35μm。在金刚石膜上制作了线宽为8μm的IDT电极。尝试利用射频(RF)磁控溅射法在制备的多层式金刚石膜上生长ZnO薄膜,X-射线衍射(XRD)结果表明,当衬底温度(Th)为250℃、气压(P)为0.4 Pa时,在多层式金刚石薄膜衬底上可沉积高度c轴取向的ZnO薄膜,电阻率接近106Ω.cm,满足制作声表面波器件对衬底材料的要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.