基于FPGA的DVB-T移动接收系统

介绍一种基于FPGA的DVB-T数字电视广播移动接收系统,主要阐述了DVB-T系统中TS码流的组成结构以及对其解复用的原理,提出了基于FPGA的TS码流解复用模块的具体实现方法.此FPGA还包括与高频头、MCU以及USB2.0芯片等模块的传输接口,由FPGA及其外围电路构成了一个完整的DVB-T移动接收系统.     

TS流解复用的SoC设计与实现

介绍了TS流解复用的SoC实现方案,FPGA硬件电路采用参数匹配法来实现TS包的过滤和PSI/SI分段的匹配,利用Nios软核处理器实现对参数的配置及PSI/SI表的分析,既满足了实时的要求,又具有较高的灵活性.通过接入实际码流进行测试,可以快速地实现对TS流的解复用.     

基于FPGA的TS流的UDP封装实现

为实现数字广播接收机输出的传输（TS）流方便地接入嵌入式平台,实现综合业务接收,本文基于现场可编程门阵列（FPGA）,实现了将集成DVB-T（Digital Video Broadcasting-Terrestrial）高频头输出的TS流转化为UDP协议的IP流,进一步通过以太网接口进入嵌入式平台,支持综合业务接收。该接口转化模块借助FPGA,将缓存的TS流进行有效封装,设置以太网接口,输出UDP格式的IP流。实测表明,该接口转换模块可实现TS流到IP流的转换,支持嵌入式平台视频播放与综合业务接收。     

DVB-T中伪随机序列扰码器的FPGA实现

伪随机序列在伪码测距、导航、数字数据扰乱器、噪声产生器、通信加密中有着广泛的应用。在这些实际应用中,常常利用现场可编程门阵列（FPGA）来产生伪随机序列,这便于系统设计和测试的实现。针对数字地面电视广播（DVB-T）标准,以线性反馈移位寄存器电路为基础,设计了一种并行伪随机序列产生方法,该方法简单而高效地实现DVB-T系统码流数据的扰码。实验结果表明,MATLAB扰码算法结果与FPGA扰码模块仿真结果和硬件实现结果一致,该设计方法切实可行。     

SDH中E3复用/解复用系统的FPGA实现

基于FPGA设计了SDH中E3信号复用/解复用系统,包括HDB3编/译码模块、码速调整模块、映射/解映射模块、定位/解定位模块和复用/解复用模块等。在QuartusⅡ9.0中进行了仿真、综合、布局布线和时序仿真,直至各部分功能分别实现,并在Altera公司的Cyclone第四代产品EP4CE115F29C7N上验证了其正确性。用SDH分析仪ANT-5对设计结果进行了一周的测试,误码为0,说明设计基本正确。     

基于以太网的单频网网络适配器设计

设计了一种基于以太网的单频网网络适配器,该方案由FPGA实现的核心功能模块、单片机控制模块和物理层芯片等组成。该网络适配器采用了多路TS码流复用和RS纠错编码,能实现传输速率可调,支持"点对点"以及"点对多点"两种传输方式。     

HDTV信源解码SoC中解复用的设计与实现

结合高清晰度电视（HDTV）SoC平台项目，重点研究了HDTV SoC平台中一个重要功能模块MPEG-2传送流（TS）解复用的设计与实现过程。实验证明本模块TS流处理速度可以达到120Mbps，完全满足HDTV解码需要。     

一种BCH码的新型译码方法在TPS信息提取中的应用

针对DVB-T数字电视接收机中TPS信息提取使用的BCH(127,113,t=2)码的(67,53,t=2)缩短码提出了一种新的译码算法,并给出了DVB-T接收芯片中应用该译码算法的TPS信息提取模块的FPGA实现.该算法与传统的BCH译码算法相比,它可同时纠正随机和突发错误,提高纠错能力,并且具有译码速度块,硬件实现复杂度低等优点.     

数字电视系统解复用中PCR抖动问题的研究

通过研究系统级解复用过程中出现的PCR抖动问题,提出了两种解决的策略,尤其是在符合MPEG-2标准的前提下,对MPEG-2标准进行了一些改进,自定义了一些复用和解复用的协议,使得在系统级解复用过程中,能从多节目TS流中完整准确地恢复出单节目码流。     

CMMB解复用器的设计和实现

介绍CMMB的复用结构及数据的封装方式,在此基础上设计并实现了软件解复用器。该解复用器可以正确解析CMMB码流的网络信息表、复用配置表、业务配置表等各控制信息表,并得到业务的视音频码流。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.