红外空芯光纤

本文论述了红外空芯光纤的研究现状和进展，包括电介质包层金属波导材料的选择、波导制造技术和性质等。     

10.6μm空芯传能光纤的研制

为研制10.6μm空芯传能光纤,讨论了银层质量、碘化银层质量对空芯波导传输损耗的影响.介绍了研制波长为10.6 μm的空芯传能光纤的工艺方案及其典型参数.通过液相化学沉积法,在石英基底管内壁成功地生成了优质金属银层和碘化银电介质包层.制作了出具有高透过率的空芯红外波导.     

空芯反谐振光纤2.60～4.35 μm中红外激光传输及损耗表征

为了研究空芯反谐振光纤的中红外激光传输能力,使用自制的无节点空芯反谐振光纤进行了2.60～4.35 μm的中红外激光传输实验.该空芯反谐振光纤包层由七根平均壁厚为800 nm的玻璃毛细管组成,光纤外径为365 μm,纤芯直径为115 μm.使用中红外可调谐光参量振荡器作为光源,测试了光纤在2.60,3.27,3.41,...     

一种具有新型光电探头的光纤传感器

本文作者首次提出了一种可用于光纤传感器技术的、性能优越的新型金属包层光波导。试验和理论分析计算表明：当此圆柱形金属包层光波导的直径为２００μｍ时，其损耗为０．０６ｄＢ／ｍｍ，损耗随金属包层长度的增加而线性增加．在制做光纤传感器时，使被测参数的变化导致金属包层长度的变化；通过测量金属包层光波导的损耗就可以测出金属包层长度的变化，进而测出被测参数。由于光功率及损耗的测量原理简单、精度高、造价低，为光纤传感器提供了一种成熟、经济的测量探头，通过大量的试验和传感器试制证明具有此种探头的光纤传感器性能优越、制作方便，是一种难得的光电探头。     

医用CO2激光传输用空芯波导的研制

本文作者设计并制备了一种新型的CO2激光传输用空芯波导。除了6μm-9μm处的基团吸收外，这种空芯波导在整个中红外区域的损耗都很小，在10.6μm波长处的损耗约为0.4db/m，传输能量为10W时，可以稳定传输20分钟以上，基本上可以满足CO2激光在医疗中的应用。     

八边形空芯微结构光纤的制备和特性分析

基于反共振反射光波导中的抑制耦合理论,本文设计和制备出一种单空气包层大纤芯的八边形空芯微结构光纤,光纤直径为170 μm,纤芯直径为44 μm,纤芯壁厚为1.2 μm。实验测试结果表明该光纤对于波长为750 nm的光具有良好的导光特性。该空芯光纤结构简单,容易制备,并可设计成大纤芯适用于光泵碱金属蒸气激光、液体填充传感、高功率近红外光能量传输及气体激光器等领域,为探索简易新型空芯微结构光纤打下前期实验基础。     

电介质/金属型红外空芯波导的传输特性和结构设计

由普通空芯波导的模式结构和传输性质出发，讨论了电介质/金属型空芯波导的传输特性，分析了HE11模在红外波段的低损耗传输条件。并在此基础上设计了电介质/金属型空芯波导的最佳结构，对膜系的选择也提供了明确的指导。     

红外与毫米波学报J．InfraredMillim．Waves第十三卷年度索引

红外与毫米波学报Ｊ．ＩｎｆｒａｒｅｄＭｉｌｌｉｍ．Ｗａｖｅｓ第十三卷年度索引（一九九四年）关键词索引表面效应一线性和非线性静磁表面波能流的受控偏转特性（１３１）波导－线性和非线性静磁表面波能流的受控偏转特性（１３１）－金属包层平面光波导偏振器和在线单...     

基于色散调制硒化锌脊形波导产生超连续谱（英文）

研究了基于色散调制硒化锌脊形波导中红外超连续谱的产生,仿真表明通过调整波导中波导芯层和包层之间的折射率差距和结构参数,零色散波长可以转移到更短的波长。用2μm厚的Ge,5As10S85玻璃作为包层可以将光场限制在4和8μm宽的波导中。为了解泵浦波长和结构参数对超连续谱产生的影响,模拟5 cm长波导在不同条件下产生的超连续谱。我们的结果表明,泵浦波长和功率以及波导参数是影响超连续谱展宽的主要原因。研究发现,4μm宽硒化锌波导在4.5μm波长20千瓦峰值功率下可以产生3.0～12.2μm(大于2倍频程)超连续谱,这有利于片上超连续光源应用在生物医学成像、中红外环境和工业传感上。     

太赫兹波在金属镀层空芯圆波导中的传输特性

文章理论分析了太赫兹波在金属镀层空芯圆波导中的传输特性.比较了在内直径为2mm的空芯圆波导中分别镀金、铅、镍不同金属时不同入射频率的太赫兹波的理论衰减常数,计算了镀不同金属而入射波波长一定的情况下波导中主模即最低模TE11模的衰减常数随波导内直径的变化情况.进一步研究表明Au,Ag,Cu均可作为空芯圆波导中优良的金属镀层以用于太赫兹波的低损耗传输.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.