零偏置光电振荡器相位噪声的讨论与分析

光电振荡器(OEO)可以产生低相位噪声的微波信号。在OEO中,MZ调制器(MZM)可以偏置于正交工作点使基频信号的损耗最低,也可以工作于零偏置点从而得到倍频信号。在MZM零偏置的OEO中,利用电分频器将倍频信号分频得到基频信号,从而构建环路振荡器。本文对这2种OEO(MZM正交偏置和MZM零偏置)的相位噪声进行了理论分析。由理论分析可知,MZM零偏置OEO的相位噪声优于MZM正交偏置OEO。根据仿真结果,可以发现MZM零偏置OEO的相位噪声噪底比MZM正交偏置OEO的相位噪声低3 dB。另外,MZM零偏置OEO的振荡模式间隔并不会受到电分频器的影响。     

基于载波相移系统的二倍频光电振荡器

为了扩展光电振荡器(OEO)的频率范围,设计了 一种基于载波相移系统的二倍频OEO(FD-OEO)。 系统采用相位调制器(PM)和Mach-Zehnder调制器(MZM)并联,构成载波相移系统,利用载 波相移双边带(CPS-DSB) 调制的方法产生二次谐波分量;同时利用啁啾光纤布拉格光栅(CFBG)色散特性实现边带分 量与CPS补偿,维持 OEO环路中基频信号的振荡。实验结果显示,在OEO环路系统基频信号为2.23GHz情况下,产生了4.30 GHz的FD信号,且通过边模抑制性能、稳定性及相位噪声对系统性能进行了验证。     

基于MZM的8倍频技术研究

通过理论建模,在中心站利用两级平行的马赫-增德尔调制器(Mach-Zehnder modul at or,MZM)组成一个光载毫米波倍频传输系统,两级MZM的射频驱动信号相位相差为45°。在基站利用PIN光电探测器对光信号进行直接探测,得到了纯度较高且频率为射频驱动信号频率8倍的毫米波信号。     

基于HBAR的X波段低相噪频率合成方法

基于高次谐波体声波谐振器(HBAR)的高Q值梳谱信号产生的特性提出了一种低相位噪声频率合成方法。该文根据HBAR的工作原理,采用HBAR与声表滤波器级联的方法共同构成低噪声振荡环路直接产生S波段信号,然后通过四倍频模块输出X波段频率信号。采用HBAR与声表滤波器串联的方式提高了带外频响抑制,输出的2.2GHz信号的相位噪声达-118.9dBc/Hz@1kHz,四倍频后得到的X波段信号8.8GHz的相噪达到-107.4dBc/Hz@1kHz。     

基于串联耦合双循环延时线的可重构光电振荡器

针对光电振荡器(OEO)系统,设计了一种可实现滤波功能的串联耦合双循环延时线(SCDRDLs),并与放大自发辐射(ASE)宽带激光源、Mach-Zehnder调制器(MZM)、偏振分束器(PBS)相结合形成微波光子滤波器(MPF)。利用结构中ASE宽带激光源相干时间小于SC-DRDLs固有延时的特性,实现MPF的非相干性。同时SC-DRDLs的双循环延时线级联特性,决定系统具有大的自由频谱范围,再结合其双输出端口与PBS形成的双环结构,完成系统的高边摸抑制性能。理论分析和实验结果表明,本文系统能产生高频谱纯度、长期稳定性和低相位噪声的微波信号;通过改变SC-DRDLs的环长,可对MPF进行重构,进而调谐振荡频率。     

精细调谐电增益环腔光电振荡器

为了有效实现光电振荡器(OEO)输出频率精细调谐 ,提出了一种基于电增益环腔(EGRR)的OEO。利用放大器、 滤波器和移相器构成可调谐EGRR,通过改变EGRR内信号的相位等效实现 环腔长度的改变,得到不同 频率的射频(RF)信号,RF信号与OEO产生的自由振荡信号电注入锁定,输出信号 的频率由锁定EGRR输出频 率的OEO模式决定,相位噪声由OEO决定。在简单结构实验的条件下,有 效实现了OEO输出频率精细调谐。实验结果表明,当光纤长为2km、EGRR长为0.5m时,得到 了频率为11.3GHz、边模抑制比(SMSR)为 48dB、可调谐范围为239MHz、调谐最小步长 为100kHz和相位噪声为－99dBc/Hz@10kHz的RF信号。     

基于Rb原子频标电注入锁定的高频稳低相噪光电振荡器

为了进一步改善光电振荡器(OEO)输出信号频 率的长期稳定度和相位噪声,提出了一种基于 Rb原子频标电注入锁定的单环OEO。将Rb原子钟产生的高频稳正弦信号注入到单环OEO,通过 注入信号与自由振荡信号的频率牵引,OEO获得单一振荡模式。实验发现,随着注入功 率的 增大,锁定带宽变大,锁定信号的相位噪声变差;随着注入功率的下降,锁定带宽变小,锁 定信号的相位噪声得 到改善,趋近于注入源信号的相位噪声。当光纤长取10km时,获得 了中心频率10GHz、边模抑制比大 于60dB、相位噪声的指标为－76dBc/Hz@100Hz和－108dBc/Hz@10kHz的输出信号,其输 出信号的长期稳定度和准确度得到改善。实验结果与理论分析一致。     

耦合式光电振荡器的理论与实验研究

为了研究耦合式光电振荡器,阐述了耦合式光电振荡器的模式选择理论,给出了维持最佳锁模状态的相位匹配条件,分析了影响射频信号相位噪声的因素,进行了基于保偏机制的耦合式光电振荡器的实验研究。采用分别调节光环形腔和光电微波振荡环路中的保偏可变光纤延迟线可改变腔长的方法,获得了腔长与振荡频率的关系。同时,采用鉴频法测量了不同条件下5GHz射频信号的相位噪声,研究了影响射频信号相位噪声的因素。结果表明,耦合式光电振荡器的振荡模式取决于光环形腔的腔长,射频信号相位噪声受到光信号偏振态、相位匹配、环路长度等因素的影响。实验中获得了偏移频率10kHz处相位噪声达到-136dBc/Hz的5GHz射频信号,是目前国内已知的相位噪声最低的耦合式光电振荡器。     

光电振荡器的原理及其实验研究

光电振荡器应用了光电混合的技术手段,通过光纤储能和延迟的方法可实现频率精度、稳定度、相位噪声都显著优于常规微波介质振荡器的一种新型振荡源.简要介绍了光电振荡器的基本原理和研究现状,并应用内调制激光器和长光纤环结构进行了实验研究,得到了相位噪声优于-112 dBc/Hz@10 kHz、线宽＜1 Hz的高性能微波信号输出.     

基于低速光调相信号注入DFB-LD产生4～16倍频的40GHz和60GHz毫米波信号

提出一种基于低速光调相信号注入半导体分布反馈激光器(DFB-LD)产生最低4倍频,最高16倍频的40GHz和60GHz的毫米波调相信号。该方案利用注入光的N阶调相边带锁定DFB-LD的波长,同时DFB-LD放大此调相边带并与原注入光信号通过相干差拍作用在LD腔内形成毫米波调相信号。通过理论建模分析了工作原理,经系统实验验证了此方案的可行性。应用2.5,5和10GHz的光调相信号均得到40GHz或60GHz的毫米波信号,实现了最低4倍频,最高16倍频的毫米波信号产生,并通过单边带相位噪声的测量验证了毫米波的频率稳定度。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.