基于一种自适应折中-平滑阈值的脉搏信号小波去噪

人体脉搏信号在采集过程中会掺杂着各种噪声信号,而传统所采用的小波变换阈值去噪法在处理脉搏信号时又存在着缺陷,本文采用的折中一平滑闽值函数,并基于斯坦恩无偏估计（SURE）优化算法去寻找最优阈值门限,与在原有阈值基础上的小波自适应阈值去噪做对比,通过利用Matlab对脉搏信号进行去噪仿真。结果表明,依据信噪比（SNR）和信号平滑度Ⅲ的评判标准,该方法去噪效果更好,结果令人满意。     

基于小波阈值自适应的局部放电信号降噪

为了抑制电缆绝缘局部放电检测中存在的白噪声干扰,提出一种基于小波阈值的局部放电特征提取的方法.对含噪信号进行小波分解,在选取最优阈值时,用鲸鱼算法优化阈值选取过程,有效提高了算法的精度与运算速度.为验证去噪效果,利用该方法和传统小波软阈值法对局部放电仿真信号和实测局部放电信号去噪,结果表明:与传统软阈值函数法相比,该方...     

基于自适应阈值正交小波变换兰姆波去噪方法

提出了基于自适应阈值正交小波变换兰姆波去噪方法 （WT-AL）。首先利用正交小波变换降低含噪兰姆波信号的自相关性,然后利用自适应阈值方法自适应地对不同尺度的正交小波变换系数进行阈值处理,最后利用小波重构获得重构信号。实验结果表明：该方法去噪后信号信噪比明显提高,均方误差明显降低。     

基于改进协同量子粒子群的小波去噪分析研究

小波阈值函数中,因信号之间的不连续性及小波估计系数与原信号的小波系数存在误差等原因,图像无法得到最优还原.为此提出一种基于改进协同量子粒子群算法优化小波函数的去噪方法.该方法在协同量子粒子群优化(CQPSO)算法的基础上引入了自适应收缩扩张因子,用改进的协同量子粒子群算法优化小波阈值函数中的调节因子和阈值.仿真图像和数...     

基于小波阈值算法的海杂波信号去噪

为有效提取噪声背景下的海杂波信号,针对海杂波信号非线性非平稳的特点,提出基于小波阈值算法对实测海杂波数据去噪。在噪声水平未知条件下,提出基于噪声主要在高频段且能量较小、信号主要集中在低频段思想的噪声判断准则。为验证小波去噪效果,将该算法对含有噪声的海杂波实测数据进行去噪,采用均方差和降噪信号信噪比两项指标来衡量去噪效果,并与均值和中值等去噪方法对比,小波算法在这两项指标均优于其他算法;此外,实验结果还表明,db2小波在双曲线阈值函数和HeurSure阈值模式下优于其他小波去噪效果。     

改进的小波去噪法的研究

利用小波方法进行去噪,效果与选取的阈值、阈值的施加方式(硬阈值或软阈值)、分解层数以及使用的正交小波有关,但小波方法对噪音毛刺点却无能为力。在Matlab上选择合适的小波参数后对叠加了高斯白噪声的正弦信号降噪,然后使用平移不变量算法进行信号平滑。对比普通小波去噪,该方法能有效地消除毛刺,使去噪后的信号更光滑,更逼近真实信号。     

基于小波包变换的多阈值法语音信号去噪净化

文中在小波包变换和传统阈值法的基础上,提出了一种基于小波包变换的多尺度多阈值语音信号去噪净化方法。采用小波包分解,克服了传统的正交小波变换的缺陷。采用多尺度多阈值方法,通过改进噪声方差估计方法,在去噪的同时,进一步提高信噪比。仿真实验结果表明,本方法能有效去除信号中的噪声和较好保留语音细节,达到更佳的语音净化效果。     

基于SURE无偏估计的自适应小波阈值去噪

本文在D.L.Dohono提出的小波阈值去噪的基础上,提出了一种新的阈值函数,与原来的分段阈值函数相比,此函数具有明显优点,表达式简单易于计算,连续可微,易于求导.此函数的这些优点为实现信号的自适应去噪提供了可能.本文应用此阈值函数,基于SURE无偏估计,给出了一种自适应去噪方法.并用受污染的blocks、bumps、heavy sine、doppler等典型信号做实验,实验结果显示此方法能在最小均方误差(MSE)意义上收敛,而且其最小均方误差优于其他文献中的阈值去噪的方法.     

一种局部放电信号去噪的新方法

小波变换是在局部放电信号去噪过程中常用的方法,由于实际信号中噪声频带较宽,仅用小波变换去噪有可能带来波形畸变。文中将经验模态分解（Empircial Mode Decomposition,EMD）引入小波阈值去噪算法中,提出了一种基于EMD的小波阈值去噪算法,信号经EMD变换后被分解成若干个频率的本征模态函数（Intrinsic Mode Function,IMF）,再对各个频率的IMF分量进行小波阈值去噪。相比于普通的小波阈值去噪算法,该方法能取得更好的去噪效果。对仿真信号和实测信号的处理结果验证了该方法的有效性。     

一种改进的小波阈值去噪法

基于小波变换的阈值去噪法是去除数字信号中白噪声的有效算法,其中阈值函数的选择关系着重构信号的连续性和精度。但是硬阈值函数在阈值点具有不连续性,软阈值函数中估计的小波系数与信号的小波信号间存在恒定偏差的缺陷,这些缺点限制了阈值去噪法的进一步应用。将硬阈值和软阈值函数进行加权平均,选取适当的权值函数,可以构造出一种克服了软硬阈值缺点的新的阈值函数。仿真结果表明,该方法具有较好的去噪效果。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.