机载相控阵雷达STAP原理及其干扰方法研究

空时二维自适应处理技术(STAP)具有优越的杂波抑制性能,作为一种关键动目标检测技术,在机载和天基雷达中得到了广泛的应用。首先介绍了机载雷达的杂波几何模型,阐述了机载相控阵雷达STAP技术的基本原理,然后从其弱点和局限性出发探讨了对其可能的几种干扰方式,并详细解释了其干扰机理,为机载相控阵雷达STAP干扰技术的具体实现打下了基础,具有一定的工程应用价值。     

雷达

TN95 94051268机载雷达空时二维信号处理(续)/保铮,张玉洪,廖桂生,王永良,吴仁彪(西安电子科技大学)/j现代雷达一1094,(2)一17一27 图26参17(许)扰背景和多目标情况下均具有最好的检测性能,并且其参考滑窗单元幅位排序时间还不到05一cDAR的 一半.图1表2参12(许)1,N95 94051269机载相控阵雷达时空二维杂波的仿真/任迎舟,张玉洪(西安电子科技大学)lj现代雷达一1994,(2)一28~36 文章给出了一种机载相控阵雷达时空二维杂波相干视频信号的计算机仿真方法,其中考虑了雷达系统参数,载机姿态角和阵元幅相误差等多种实际因素.因而具有较好的通用性…     

机载雷达杂波特性及工程中的目标检测技术

针对机载雷达地杂波谱的分布特性,讨论了机载PD和相控阵两种体制雷达的工程可实现的地面目标检测方法,重点研究了空时二维处理技术在机载相控阵雷达杂波抑制中的应用,仿真结果证明3DT-SAP方法能有效改善杂波抑制性能,具有良好的工程应用价值.     

《电讯技术》专题资料《雷达探测技术》题要（六）

毫米波有源相控阵雷达及其系统设计（石星） 描述了毫米波有源相控阵雷达的特点和应用,讨论了直升机载毫米波有源相控阵火控雷达的系统设计,对设计中的几个关键问题进行了较详细的探讨。预测了直升机载火控雷达的发展方向。     

相控阵技术在机载火控雷达中的应用

在现代战争中,先进的战斗机对掌握制空权起非常重要的作用。近些年来,随着对战斗机远程打击能力的要求不断提高,机载火控雷达作为战斗机的"千里眼",其性能也越来越受到重视。为了适应这种需求,人们将相控阵技术与机载火控雷达相结合,实现了战斗机探测距离的巨大飞跃。本文在简要介绍相控阵技术的基础上,主要对其在机载火控雷达中的应用进行了分析。     

机载有源相控阵火控雷达发展现状及趋势

概述了世界各国机载有源相控阵火控雷达的发展情况,介绍了国外目前在研制的机载有源相控阵火控雷达,总结了机载火控有源相控阵雷达的发展趋势.     

模拟技术与模拟装置

0328754一种典型的机载相控阵雷达仿真系统[刊,中]/韩红//系统工程与电子技术.—2003,25(7).—873-877(D2)雷达系统仿真的主要目的是建立雷达系统的数学模型和电磁场环境。雷达信号处理和数据处理的仿真主要是针对选择的算法完成参数寻优。讨论了机载相控阵雷达系统的建模和仿真。从功能实现的角度描述了虚拟机载相控阵PD雷达系统的实现,并给出了一个在局域网内实现的仿真系统结构。参7     

Radant透镜体制低成本相控阵雷达技术的研究

一种基于Radant透镜体制的相控阵雷达技术,将传统二维扫描相控阵雷达的移相单元数由M×N个变为M N个,由于移相单元数的大幅度减少,使得二维扫描相控阵雷达的制造成本大幅度降低.目前,Radant透镜体制的相控阵雷达已经得到了工程应用,但透镜的插入损耗较大仍是需要进一步研究的课题.Radant透镜技术的使用,将使二维扫描相控阵雷达的应用领域更加广泛.     

机载相控阵雷达软件可靠性测评环境建设

针对相控阵雷达的特点及目前的使用现状,研究其软件可靠性测评环境建设。提出了机载相控阵雷达主机软件的可靠性测试环境要求,进行机载相控阵雷达主机软件的可靠性测试环境建设,实现了机载相控阵雷达主机软件的可靠性测试环境仿真软件设计。     

PIN管的微波特性及其应用

第三讲 PIN管的应用(二)——相幅控制相幅控制器件,尤其是相控器件,在相控阵雷达中有广泛的用途,是相控阵雷达的关键部件之一。在相控阵雷达的每个辐射单元输入处接入电控移相器,改变其相位,可以快速地改变天线阵的相位波前,从而控制波束辐射方向。也可通过电控移相器来控制波     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.