带隐私保护的集合交集计算协议的发展现状综述

隐私保护集合交集(Private Set Intersection, PSI)计算属于安全多方计算领域的特定应用问题,不仅具有重要的理论意义,也具有很强的应用价值。随着用户数据的隐私保护越来越受到重视,这一方向的研究更是符合人们日益强烈的在享受各类依赖个人信息的业务的便利性的同时最大程度保护个人信息私密性的需要。本文对隐私保护集合交集的问题定义进行了简要的阐述,重点介绍了当前性能(通信和计算负载)最好的PSI协议的主要思想与适宜的应用场景,并且在最后对这些协议进行了性能上的比较。     

基于伪随机置换的朋友发现系统

近年来,随着移动社交软件的迅速发展,便携式移动终端已经渗透到人们生活的方方面面。在这些软件中,人们经常用到其中的一项功能—朋友发现,但是目前这个功能对于用户并不安全,大量隐私信息被云服务商所获取。针对此现象,文章基于目前隐私集合比较的现状,运用伪随机置换和安全多方计算协议并加以改进,设计出基于伪随机置换的朋友发现系统,本系统使用户找到他们集合的交集而且不泄露除交集以外的信息,具有一定推广价值。     

集合交集元素和的保密计算

安全多方计算作为密码学的重要分支，长期以来主要致力于解决两方或多方参与者隐私数据的联合计算.集合交集元素和的隐私计算作为安全多方计算中的科学计算问题，在保密计算广告转化率中具有重要作用.我们利用保密替换和加密选择求集合的交集，结合Lifted ElGamal加密算法，研究了不同限制下（数据范围较小和数据范围较大）集合交集元素和多方保密计算.本文方案解决两方计算时，Bob只需从Alice发送的数据中选择数据，避免了复杂的模指数运算，且双方不需多次交互，降低了计算成本和通信次数.多方参与计算时，根据加密选择和保密替换的性质，得到集合交集的密文，然后在密文上计算得到集合交集元素的和.通过理论分析和实验证明，本文协议是高效的.最后利用模拟范例证明本文协议是安全的.     

布尔电路上保护隐私集合并集运算的研究与实现

隐私保护技术是当前信息安全领域的研究热点。然而,现阶段集合并集运算中的隐私保护技术侧重理论研究,在实验模型的开发上较为欠缺。针对该问题,该文首先设计了保护隐私的集合合并运算电路、去重电路和混淆电路,并应用YAO氏通用混淆电路估值技术提出了一种布尔电路上保护隐私的集合并集协议。然后,该文使用模拟器视图仿真法证明了协议的安全性。最后,基于MightBeEvil中的YAO氏混淆电路估值框架,开发了该文理论方案对应的实验模型。实验结果表明,在安全计算稀疏集合的并集时,所提算法效率优于当前布尔电路上的其他算法。     

基于非对称QKD的股票交易数据库隐私查询协议

证券交易所的股票交易数据库中包含大量敏感信息,用户查询该数据库时保障账户及数据库的隐私十分重要.分析了非对称量子密钥分配(QKD)及其优良特性,提出了一种基于非对称QKD的不经意集合元素映射判定协议.该协议在查询数据库时保证了用户和数据库的隐私.安全性分析结果表明,该协议能有效抵抗量子存储攻击、伪造量子态攻击和纠缠测量攻击,具有很高的信道损耗容忍度.     

高性能两方隐私集合求交技术研究及应用探索

隐私集合求交（Private Set Intersection,PSI）是一种保护数据隐私的集合计算技术,允许互不信任的各方协同计算私有数据的交集,且不透露交集以外的任何信息。PSI技术被广泛研究和应用,主要从提升性能和探索新型应用场景两个方面发力。首先详细梳理两方PSI的研究进展,分析和评估业界先进的算法协议;其次以卫星互联网新型应用场景为例,探索提出高性能两方PSI应用方案,实验测试不同数据类型在多种网络环境下的性能,给出新型场景下的PSI实践范式。最后进行总结与展望,给出了PSI的发展思考与建议。     

两方有理数多重集的保密计算

集合的安全多方计算(SMC)在联合数据分析、敏感数据安全查询、数据可信交换等场景有着广泛的应用。该文基于有理数的几何编码,结合保密内积协议,首次提出了有理数域上两方多重集交集和并集的保密计算协议。应用模拟范例证明了协议在半诚实模型下的安全性,分别通过理论分析和仿真测试验证了协议的高效性。与现有协议相比,所设计协议无需给定包含所有集合元素的全集,可以保护集合势的隐私性,且在协议执行过程主要使用乘法运算,达到了信息论安全。     

基于循环移位的轻量型相互认证协议研究

 安全隐私是射频识别系统的关键问题,该文在轻量型相互认证协议的基础上,根据阅读器产生的随机数对将要传送的信息进行循环左移,提出了基于循环移位的轻量型相互认证协议(CSLMAP协议),并用GNY逻辑对协议的安全性进行了证明.结果显示,所提出的CSLMAP协议解决了轻量型相互认证协议中的安全隐私问题,提高了认证协议的执行效率,降低了标签的应用成本.     

车辆自组网的位置隐私保护技术研究

车辆自组网的位置服务在解决道路安全问题、为驾乘者提供便捷服务的同时,也带来了相应的隐私保护问题。总结了隐私保护内容,重点分析了车辆自组网的假名和签名2类隐私保护技术,其中假名方案分为基于特殊地形、基于安静时段、加密mix-zones和mix-zones通信代理;签名方案分为群签名和环签名。继而针对隐私保护水平的高低,分析了匿名集合、熵度量、数学理论分析和形式化证明几类主要的位置隐私度量方法,对其各自的特点进行了总结比较。     

一种基于验证的量子私有集合计算协议

私有集合计算是安全多方计算的重要组成部分,可以在不暴露合法参与者私有信息的情况下解决参与者之间的某些集合计算问题(如交集、并集)。然而现有的量子私有集合计算协议基本上没有考虑验证性,参与者无法确定计算结果是否正确。针对此问题,提出了一种基于验证的量子私有集合计算协议。此外,该协议还能够可选择地求解私有交集或并集问题。性能分析中通过实例证明了该协议的正确性与可验证性,并通过外部攻击和参与者攻击证明了协议的安全性。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.