基于四模谐振器的新型双通带滤波器设计

提出了一种新型的四模谐振器,并在此基础上设计了一款双通带滤波器。利用奇偶模分析法进行理论分析,采用共面波导异面馈电方式,使四模谐振器中的每两个谐振频率耦合,分别形成滤波器的低通带与高通带。通过射频仿真软件HFSS 研究滤波器主要结构参数对性能的影响并进行优化,对滤波器进行加工制作及测试。测试结果表明双通带滤波器的中心频率分别为2 GHz 和5.4 GHz, 3 dB 相对带宽分别为11.9%和17%,电路尺寸为0.11λg ×0.1λg。所设计的双通带滤波器具有结构新颖、通带宽、尺寸小的特点。     

具有可控双陷波特性的超宽带滤波器设计

在多模谐振器的基础上,设计了一种新型的具有双陷波特性的超宽带滤波器。该滤波器在十字形谐振器的基础上加载了一对阶跃阻抗谐振器及两组短路反耦合线结构。设计得到的滤波器尺寸紧凑,且可实现滤波器谐振频率及陷波点的独立可控。测试可得滤波器的通频带为1.8~12.1 GHz,3 dB相对带宽为148%,通带内插入损耗小于1 dB,两个陷波点频率分别位于5.15 GHz和6.98 GHz。结果表明,该超宽带滤波器能有效地抑制WLAN频段和C波段卫星信号的干扰,与仿真结果吻合良好。     

基于枝节加载谐振器的新型三频带通滤波器设计

提出了一种新型平面三频带通滤波器,该滤波器由一个加载短路枝节的阶梯阻抗谐振器,一对加载开路枝节的背靠背E型谐振器,以及包含源负载直接耦合的馈电结构组成.所采用的枝节加载谐振器的多模工作特性使滤波器的体积大大减小,同时每个通带的位置及其耦合特性都能够独立调谐.另外,通过源负载直接耦合引入通带两侧的传输零点,实现了滤波器良好的频率选择性.最后设计并加工了一款高选择性小型化三频带通滤波器,其三个通带的中心频率分别为2.0GHz,3.95GHz和6.35GHz,插入损耗均小于2.5dB,带内回波损耗均优于14dB,实验结果与仿真结果吻合良好.     

基于双模谐振器的双通带可调谐滤波器设计

从理论上分析了开路支节加载双频谐振器的谐振模式,通过在谐振器末端加载变容二极管的方式,设计了一款双通带独立可调谐滤波器。通过调节谐振器末端变容二极管电容值大小来改变通带的中心频率,通过调节支节末端的变容二极管来调节通带的带宽。该滤波器的两个通带之间相互独立,调谐其中一个通带对另一个通带几乎没有影响。通过引入源与负载的耦合,使得双通带两侧各产生一个传输零点,提高了滤波器的选择性和带外抑制能力。最终设计出的滤波器第一通带的中心频率在1.08~1.19 GHz之间连续可调,绝对带宽在112~152 MHz之间连续可调;第二通带中心频率在2.07~2.22 GHz 之间连续可调,其绝对带宽在132~189 MHz 之间连续可调。在调谐过程中,通过调节中心开路支节末端变容二极管加载直流电压大小,实现调谐过程两通带带宽基本维持不变。     

基于方开环谐振器的双陷波超宽带滤波器

针对超宽带系统易受窄带信号干扰的问题,设计了一种可以抑制无线局域网络(WLAN)和卫星通信信号干扰的双陷波超宽带带通滤波器。该滤波器的主要谐振结构由T型枝节加载的多模谐振器组成,改进的T型枝节增加了两个传输零点,同时减小了滤波器尺寸;通过耦合方开环谐振器,实现了两个陷波特性,调节谐振器尺寸,可以得到所需的陷波频率。测试结果表明,该滤波器的尺寸仅16.7mm×8.5mm,中心频率为6.9GHz,通带为3.0~10.8GHz,陷波中心频率在5.8GHz和8.04GHz,衰减最低点分别为-27dB和-18dB,仿真与测量结果有较好的一致性。     

多传输零点的新型五通带多模滤波器

针对目前多模滤波器通带数量以及通带选择性有待提高的问题,提出一款新型的基于枝节加载谐振器的五通带多模滤波器。该滤波器采用了一种新型的馈电和耦合方式,可以独立控制外部品质因数和控制多数通带的耦合系数。该滤波器不需要过孔,制作简单。由于源-负载之间的耦合以及多径传输效应的影响,产生了多个传输零点,提高了通带的选择性。进行了滤波器的设计,制作和测试,测试结果与仿真结果吻合,滤波器的五个中心频率位于1.6,3,3.8,4.7,5.7 GHz,其相对带宽分别为12.5%,11.7%,5.48%,8.51%,4.37%。     

一种中心枝节折叠的新型超宽带滤波器

为了改善超宽带滤波器存在插入损耗较大,带外抑制特性较差等问题。采用中心加载折叠枝节多模谐振器结构,设计了一种新型超宽带滤波器。改变该滤波器多模谐振器的参数,可调节谐振器的谐振频率。该滤波器整体性能良好,具有结构紧凑,尺寸小,插入损耗小及带外抑制特性好等优点。仿真结果表明,该滤波器的中心频率为6.85GHz,通带为3¹0.7GHz,实现相对带宽112%。实物测试结果与仿真结果基本一致。     

基于CSRR-QMSIW谐振器的双通带滤波器的设计

为满足滤波器在双频带通信系统中发展的要求,提出了一种基于1/4模基片集成波导(QMSIW)加载互补开口谐振环(CSRR)的新型双通带滤波器。根据CSRR谐振器的传输特性,实现以其谐振频点为中心的第一个通带;设计QMSIW谐振腔的边长,实现以该腔体谐振频点为中心的第二通带;设计QMSIW腔体间的耦合方式,在两通带之间和高阻带处各引入一个传输零点,加强两通带隔离度和带外抑制。设计了一款两通带的中心频率分别为8.1 GHz和11.5 GHz,且有效尺寸仅为15 mm×8 mm,插入损耗低于0.4 dB,高阻带衰减达64 dB,两通带隔离度达46 dB。     

一种基于互补谐振结构的宽带共模噪声滤波器

提出了一种用于高速差分信号传输的宽带共模噪声滤波器,采用在差分线正下方参考地平面上刻蚀内外互补的共面波导1/4波长谐振器和Z字形短路枝节线来实现。滤波器采用内外互补耦合λ/4开路枝节线谐振器结构,有效减小了横向尺寸,利用Z字形枝节线增大互感以改善滤波器的带内增益平坦度,最后用级联实现了共模噪声抑制阻带的展宽。仿真和测试结果表明,该滤波器在4.1~12.5 GHz频率范围内实现了20 dB的共模噪声抑制,共模阻带相对带宽(FBW)为101%,尺寸仅为0.78λ_g×0.18λ_g(15.8 mm×3.6 mm),其中λ_g为阻带中心频率处对应的波长。且该结构在实现共模噪声宽带抑制的同时,还可有效保证差分信号传输特性良好。     

X波段SICL小型化带通滤波器的设计

为有效减小X波段滤波器的尺寸,减小通带损耗,对基片集成同轴线(SICL)结构进行了研究,提出一种阶跃阻抗(SIR)型SICL带通滤波器,并针对SICL谐振腔与其他平面电路的连接设计了一种由共面波导(CPW)向SICL谐振腔提供激励的平面结构,以便滤波器的测量。仿真结果表明,滤波器通带特性优异,其中心频率为10 GHz,带宽为1.5 GHz,尺寸为13 mm×7 mm,插入损耗为-0.8 dB。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.