LD光纤耦合端面泵浦Nd:YVO4/Cr4+:YAG激光器

根据Siegman的被动调Q判据,Nd:YVO4晶体由于受激发射截面大、上能级寿命短,很难获得被动调Q输出。利用LD光纤耦合端面泵浦Nd:YVO4晶体,在泵浦功率3.5W时,连续运转获得最大输出1.4W,相应的光光转换效率为40%,同时采用Cr4+:YAG可饱和吸收体,成功地实现了Nd:YVO4被动调Q运转,获得了脉宽11.7ns,重复频率22kHz调Q输出。     

LD光纤耦合端面泵浦Nd：YVO4／Cr^4＋：YAG激光器

根据Siegman的被动调Q判据，Nd:YVO4晶体由于受激发射截面大、上能级寿命短，很难获得被动调Q输出。利用LD光纤耦合端面泵浦Nd:YVO4晶体，在泵浦功率3.5W时，连续运转获得最大输出1.4W，相应的光光转换效率为40%，同时采用Cr^4 :YAG可饱和吸收体，成功地实现了Nd:YVO4被动调Q运转，获得了脉宽11.7ns，重复频率22kHz调Q输出。     

高平均功率高重复率固态双Nd:YVO4基模激光器

报道了采用国产大功率光纤束模块双端泵浦双Nd：YVO4激光晶体和声光调Q技术,实现了高平均功率、高重复频率的1064nm激光输出。通过降低Nd：YVO4激光晶体的掺杂浓度,采用双端泵浦双晶体,在晶体热效应允许的范围内最大限度地利用了泵浦光的能量,通过腔内插入声光调Q器件,在晶体注入总功率为50W的情况下,得到了24W的TEM00模连续波1064nm激光输出。最高重复频率为50kHz时,平均输出功率为22．9W,脉冲宽度为38ns,相应的光-光转换效率为45．8％;在重复频率为10kHz时,具有最大单脉冲能量1．55mJ,相应的脉冲宽度为15ns,峰值功率达到了103kW。     

LD泵铺Nd：YVO4／Cr：YAG被动调Q绿光激光器

报道了一种LD近贴泵浦、KTP晶体腔内倍频的Nd:YVO4/Cr:YAG结构高重复频率被动调Q绿光激光器。在注入泵浦功率为750mW时,得到平均功率86mW、脉冲宽度26.6ns、重复频率79.2kHz、峰值功率41.1W的被动调Q脉冲绿光输出。     

高重复频率、窄脉宽全固态光纤放大器种子源

高重复频率、窄脉宽的全固态激光器种子源级联光纤放大器是获得高功率脉冲激光输出的有效手段.短上能态寿命的Nd:YVO4晶体在连续抽运、高重复频率Q开关工作时容易得到接近连续性能的平均输出功率.理论分析了声光(AO)调Q器件中影响输出能量和脉宽大小的主要因素,优化配置了腔型参数.利用激光二极管(LD)光纤耦合模块端面抽运Nd:YVO4晶体,实现了声-光调Q重复频率100 kHz以上,脉宽20 ns以下,波长1064 nm的激光输出.在抽运功率5.7 W时,得到了脉宽15.3 ns,重复频率150 kHz的种子光输出,在级联单级光纤放大器后,得到了20 W的输出.     

5kHz电光调Q LD端面泵浦Nd:YVO4紫外激光器

介绍了二极管连续激光器(LD)端面泵浦Nd:YVO4晶体,在200～5000 Hz电光调Q的情况下激光输出的特性.当二极管输入电流10W,电光Q开关重复频率为1kHz时,355nm激光的平均输出功率为15mW,脉宽为20ns.并对实验结果进行了分析和讨论.     

LD单端泵浦Nd:GdVO4声光调Q高重频窄脉宽激光器

激光二极管(LD)泵浦的Q调制高频率、窄脉宽、高峰值功率的固体激光器在激光雷达、激光加工等领域日益得到广泛的应用,而更高调制频率的固体激光器在将来会更受青睐.分析了泵浦功率和输出透过率两个因素在10～100 kHz调制频率下对脉宽的影响程度.研制了LD单端泵浦Nd:GdVO4声光调Q激光器,实现了重频100 kHz下窄脉宽激光输出.在重频为80 kHz时,获得脉宽17.7 ns,平均输出功率3.49 W,峰值功率2.46 kW和在重复频率为100 kHz时,获得脉宽19.6 ns,平均输出功率3.52 W,峰值功率1.79 kW的效果.     

LD单端泵浦Nd:GdVO4声光调Ｑ高重频窄脉宽激光器

激光二极管（LD）泵浦的Q调制高频率、窄脉宽、高峰值功率的固体激光器在激光雷达、激光加工等领域日益得到广泛的应用，而更高调制频率的固体激光器在将来会更受青睐。分析了泵浦功率和输出透过率两个因素在10~100 kHz调制频率下对脉宽的影响程度。研制了LD单端泵浦Nd:GdVO4声光调Q 激光器，实现了重频100 kHz下窄脉宽激光输出。在重频为80 kHz时，获得脉宽17.7 ns，平均输出功率3.49 W，峰值功率2.46 kW和在重复频率为100 kHz时，获得脉宽19.6 ns，平均输出功率3.52 W，峰值功率1.79 kW的效果。     

500 kHz波长锁定878.6 nm LD双端泵浦Nd:YVO4声光调Q激光器

报道了一种由波长锁定878.6 nm LD双端抽运Nd:YVO4声光调Q激光器,重复频率在500 kHz时具有稳定的1 064 nm脉冲激光输出。在重频为100 kHz,晶体吸收功率58 W时,获得18.2 W的1 064 nm激光输出,光-光转换效率为31.3%,脉宽为15.2 ns;在重频为500 kHz、晶体吸收功率58 W时,获得26.1 W的1 064 nm激光输出,光-光转换效率为45%,脉宽为44.2 ns,重频在100~500 kHz下具有稳定的脉冲输出,光束质量较传统模式下有明显提高,并且转换效率也有提升。实验表明:利用波长锁定878.6 nm激光二极管直接泵浦的方式,有利于降低晶体热效应、提高光束质量,提高光-光转换效率,获得窄脉宽的脉冲激光输出,并且在一定的温度变化范围内具有极好的温度稳定性。     

高重频声光调Q Nd:YVO4激光器2.1μm光参量振荡器

采用LD端面抽运Nd:YVO4激光器,在声光Q开关重复频率为50 kHz、LD最大泵浦功率50 W时,获得输出功率26.37 W、脉冲宽度26.28 ns的1 064 nm激光输出。通过该系统抽运键合KTP外腔式光参量振荡器(OPO),当LD泵浦电流24 A、对应1 064 nm泵浦功率7.36 W时,实现了重频50 kHz的2.174 m脉冲激光输出,激光平均输出功率为324 mW,激光脉宽为17.8 ns。同时,通过实验分析了不同输出镜透过率和声光调Q激光重频对1.064 m和2.1 m激光输出功率、脉宽的影响。最后通过理论值与实验测量值的对比得出,两组数据基本吻合,且2.1 m输出功率未出现饱和。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.