数字用户线的充分利用

文章介绍公共交换电话网数字用户线(DSL)和非对称数字用户线(ADSL)的基本形式。概括说明在数字用户线上传送话音(VoDSL)的技术特点和传送通路化话音(CVoDSL)的优点及其相关问题。     

DSL技术及其在宽带设备中的应用

数字用户线(DSL)技术是国内宽带接入的主流技术,DSLAM(DSL接入复用器)是目前广泛使用的局端宽带接入设备。文中从传输速率、传输距离等方面介绍了ADSL(非对称用户线)、SHD-SL(单线对高速数字用户线)、VDSL(甚高速数字用户线)等多种DSL技术特性,讨论了DSLAM与DSL的复合技术,提出基于SHDSL技术的高速对称数据传输方案将成为IP-DSLAM系统的发展方向。还对基于SHDSL技术的IP-DSLAM网络结构、工作原理进行了阐述。     

数字用户环路传输技术的新发展

数字用户环路传输技术从８０年代基于ＩＳＤＮ基本速率的数字用户线（ＤＳＬ）技术到９０年代的高比特率数字用户线（ＨＤＳＬ）和不对称数字用户线（ＡＤＳＬ）技术，发展非常迅速，应用也愈来愈广。本文首先概述了ＤＳＬ传输技术，然后重点论述了ＨＤＳＬ和ＡＤＳＬ的最新发展，关键技术及其主要应用。     

从ADSL到VDSL

甚高位速数字用户线VDSL(Very High bit rate Digital Subscriber Line)技术是众所周知的非对称数字用户线ADSL技术的高速化版本。随着高速双向数据通信服务迅猛发展,ADSL实用化中的问题迫切急需解决,VDSL技术应运而生。 本文在回顾ADSL技术发展历程的基础上,重点介绍VDSL器件进展和它的应用实例,以便引起关注。     

高速数字用户线的发展

首先说明甚高速数字用户线(VDSL)的由来，其次说明铜线用户线性能的影响，然后解释VDSL的业务分类和VDSL的参考模型。     

宽带接入技术研究和比较

分析了目前宽带接入领域的三种主要技术(数字用户线、光纤/同轴电缆接入、无线接入)的原理和应用.通过对三种技术的比较,提出了数字用户线技术是可长远发展的技术,最符合实际应用的需求.     

关于认真做好《电信管理文件汇编（2000年7月-2001年12月）》征订发行工作的通知

近日，信息产业部以信部科[2002]143号发布了《接入网技术要求——单线对高比特率数字用户线(SHDSL)》、《接入网技术要求——26GHz本地多点分配系统(LMDS)》、《不对称数字用户线(ADSL)话音分离器技术要求和测试方法》、《接入网技术要求——基于ATM方式的不对称数字用户线(ADSL)用户端设备》、《移动IC卡公用电话系统技术要求》、《基于网络的虚拟IP专用网(IP-VPN)框架》六项通信行业标准。     

数字用户环路传输技术的新发展

数字用户环路传输技术从８０年代基于ＩＳＤＮ基本速率的数字用户线（ＤＳＬ）技术到９０年代的高比特率数字用户线（ＨＤＳＬ）和不对称数字用户线（ＡＤＳＬ）技术，发展非常迅速，应用也愈来愈广。本文首先概述了ＤＳ传输技术，然后重点论述了ＨＤＳＬ和ＡＤＳＬ的最新发展，关键技术及其主要应用。     

三论用户接入网的建设

本文进一步讨论了在用户接入网的建设中，以原有铜缆接入为主方式中的用户线平均长度，数字用户线传输方式，高比特率数字用户线传输方式及不对称数字用户线传输方式。     

数字用户环路传输技术的新发展

数字用户环路传输技术从８０年代基于ＩＳＤＮ基本速率的数字用户线技术到９０年代的高比特率数字用户线和不对称数字用户线技术，发展非常迅速，应用也俞来俞广。本文首先概述了ＤＳＬ传输技术，然后重要论述了ＨＤＳＬ和ＡＤＳＬ的最新发展，关键技术及其主要应用。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.