基于石墨烯超材料的三频段可调谐完美吸收器

为进一步降低太赫兹频率下高性能调控器件的结构复杂度,提出一种三频段可调谐超材料完美吸收器. 该吸收器由图案化的石墨烯层和经Si介质层隔开的Au接地平面组成,利用太赫兹下的石墨烯表面等离子体共振以及图案化石墨烯与电场耦合提供的电偶极子共振形成多个吸收峰. 数值仿真结果表明,在0.489 THz、1.492 THz和2.437 THz处实现了对入射波的共振吸收,各峰值处的幅值均大于99.9%. 由于吸收峰处的幅值可以通过外部施加的偏置电压改变石墨烯的费米能级进行控制,因而所提出的吸收器结构的工作状态可在反射器和吸收器之间灵活切换. 同时,通过对吸收器单元结构的对称设计实现了对极化角度的不敏感特性,且在宽入射角范围内仍能保持良好的吸收性能. 因此,所设计的基于石墨烯的太赫兹超材料功能器件在调制和传感方面具有巨大的潜力.     

可调控太赫兹吸收器调制方法

设计了一种窗棂夕阳图案太赫兹超材料吸收器。利用这种图形,从超材料太赫兹吸收器结构出发,分别通过改变顶层图案几何尺寸、中间层电介质厚度、顶层图案开口处的硅电导变化率等,设计可调控太赫兹波双频、三频、四频吸收器。重点分析了顶层图案开口处的硅电导率变化的可调控太赫兹波双频吸收器机理,其低频吸收峰吸收率由68. 7%增至99. 9%,同时低频吸收峰频率1. 043 THz红移至1. 005 THz,产生38 GHz偏移,可以实现连续频率调谐。并提出进一步深入研究本课题的建议。     

太赫兹超材料吸收器的完美吸收条件与吸收特性

提出了一种复合结构三频带太赫兹超材料吸收器,其对特定频率的入射太赫兹波呈现出完全吸收的特性。设计的超材料吸收器在入射角度达到50°时仍能保持良好的吸收特性。利用干涉理论分析了完美吸收发生的条件以及介质层介电常数对吸收频率的影响。进一步利用传输线理论结合干涉理论,分析了耶路撒冷十字短边长度对吸收特性的影响,结果表明:随着短边长度增加,吸收峰发生红移。实验结果与仿真、干涉理论、传输线理论中得到的结果吻合得较好,为今后超材料吸收器的设计提供了指导。     

T形结构太赫兹超材料吸收器的设计与仿真

太赫兹频段的超材料吸收器可广泛应用于军事雷达及生物检测等方面.提出了T形结构的太赫兹超材料吸收器,其吸收率可达99.99％以上,接近完美吸收,并从结构尺寸及电流分布等方面说明了此结构的吸收率影响因素及吸波机理.为了使上述T形结构的适用范围更广,进一步提出了极化不敏感T形吸收器及频率可调T形吸收器.仿真结果表明,所设计的超材料吸收器具有较高的吸收率、较灵活的频率调节范围和不敏感的极化角度,具有较好的研究价值.     

光驱动宽频带可调谐太赫兹吸波器设计

设计了一种基于光敏材料硅(Si)的宽频带极化不敏感的光驱动可调谐太赫兹超材料吸波器(metamaterial ab-sorber,简称MMA).该可调谐太赫兹MMA基本单元结构由嵌入光敏硅的紧凑开缝环谐振器结构、中间介质隔离层与金属底板构成.硅的电导率随着入射光的强度而发生改变,从而使太赫兹MMA工作频率和吸波性能得到有效的调节.数值计算结果表明:当硅电导率在1. 0×10~3S/m到5. 0×10~5S/m范围内动态调节时,该MMA吸波特性在0. 442 THz到0. 852 THz范围内动态调节.另外,其相对调节带宽达到63. 37%,吸收率调制深度达到60. 22%.进一步的数值计算结果表明我们所设计的MMA具备极化不敏感和宽入射角的特性.     

可调谐极化不敏感太赫兹吸收器的设计

太赫兹吸收器广泛应用于军事装备及传感仪器等研究领域,因此,提出了一种四重对称结构的极化不敏感太赫兹超材料吸收器,并通过改变结构尺寸以及电流分布分析了该结构的吸收机理及影响因素.实验结果表明,该吸收器的谐振频率处于太赫兹频段且吸收率可达到99.98％.为了扩大该太赫兹吸收器的应用范围,进一步提出了两种频率可调的极化不敏感...     

可调谐太赫兹超材料吸波器研究进展

太赫兹超材料吸波器具有吸收强、厚度薄、质量轻等优点,已被广泛应用于隐身材料、频率选择表面、太赫兹成像、通信传感等方面。但是,基于金属结构的传统太赫兹超材料吸波器一旦完成加工后,它的吸收性能是固定不变的。为解决这一问题,研究人员通过引入活性超材料设计了可调谐太赫兹超材料吸波器。结合可调谐太赫兹超材料吸波器的国内外研究现状,分类阐述了几类典型的可调谐太赫兹超材料吸波器,重点对单频带、多频带、宽频带以及可切换双功能太赫兹超材料吸波器的相关研究工作进行了梳理与总结,并对其未来发展趋势进行了分析。     

可用于农药传感的多带太赫兹超材料吸收器

多带太赫兹超材料吸收器是响应、操纵和调制太赫兹波的重要光子元件。本文基于周期性分裂环谐振器结构构建了一种多带太赫兹超材料吸收器。模拟和实验测试显示,在横磁(TM)极化情况下该超材料吸收器对0.918 THz和1.581 THz处的入射太赫兹波呈现出近似完美吸收。进一步,基于器件共振吸收峰的介电敏感特性,研究了负载不同浓度的多菌灵、三环唑、百草枯、塞苯隆4种农药溶液后超材料吸收器的传感性能,获得器件对4种农药的检测灵敏度分别为：1.06 GHz/ppm、0.65 GHz/ppm、0.67 GHz/ppm、2.07 GHz/ppm。结果表明该器件可实现对微量农药的传感检测,为今后食品质量安全控制提供了新的思路。     

复合石墨烯/硅半球的宽带太赫兹超材料吸收器

提出了一种性能可调的宽带、极化与入射角不敏感的超材料太赫兹吸收器,该吸收器自上而下分为四层结构,分别是:硅半椭球/半球体复合结构、连续石墨烯层、PDMS介质层和金属背板。通过在TE波垂直入射条件下仿真,在已知结果基础上,对不同石墨烯化学势和不同结构条件下的电场结果分析表明,在硅半椭球/半球体亚波长复合结构所形成的连续、多模法布里-珀罗共振,以及由石墨烯所激发的多个离散的等离子体共振的协同作用下,其吸收光谱得到平滑和扩展,使该结构可实现吸收率宽范围可调,以及接近100%吸收率的宽频带吸收特性。特别的,当石墨烯化学势分别为0.2与0.9 eV时,其分别可获得约5.7 THz与7 THz的宽带太赫兹波吸收（吸收率超过90％）,且其最大吸收率接近完美吸收（约99.8％）。此外,该结构还具有360°极化不敏感和高于60°的入射角不敏感等优异特性,在以上角度范围内,吸收器吸收率仍可保持到90%以上。在太赫兹波探测、光谱成像以及隐身技术等方面具有潜在的应用前景。     

电磁超材料吸收器的研究进展

基于电磁超材料的电磁谐振吸收器通过合理设计器件的物理尺寸及材料参数可对入射到吸收器的特定频率的电磁波实现100％的完美吸收,因而受到国内外学术界的高度关注.综述了当前国内外基于电磁超材料的电磁波完美吸收器在微波和太赫兹波段的研究进展,分类介绍了吸收器的结构及性能特点,最后对电磁超材料吸收器的发展趋势和待解决的问题作了探...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.