PD雷达导引头对箔条的建模与仿真

箔条作为无源电子对抗中的常用干扰材料,已被广泛用于雷达无源对抗系统中。文中对工作在脉冲多普勒体制下的雷达导引头箔条回波进行了建模,并且分析了箔条回波的时域和频域特性。基于箔条的整体运动特性,采用非递归滤波器法对箔条回波的幅度特性和功率谱特性进行了仿真实现,仿真结果与理论相符。箔条回波模型可用于PD雷达导引头干扰技术研究领域和PD雷达导引头抗干扰性能评估。     

舰船箔条干扰过程仿真建模研究

雷达箔条干扰技术是现代电子对抗的重要组成部分,对于箔条弹作战过程,弹道特性、运动特性和雷达截面积(RCS)是评估箔条弹干扰效果的重要因素.分析了舰船箔条干扰的基本原理,以质心干扰为例建立了箔条干扰弹弹道模拟模型、箔条云运动仿真模型和箔条云RCS分析模型,研究了箔条干扰工作流程和作战效果,并通过计算机仿真验证了模型的正确性.     

箔条干扰及机载多普勒雷达箔条干扰回波特性分析研究

作战飞机在受到对方机载多普勒雷达锁定时通常投放箔条弹来干扰雷达的工作。针对这一特定场景,本文分析了箔条干扰的运动特性和雷达回波特性,建立了箔条干扰的数学和仿真模型,对雷达箔条干扰回波波形特性进行了模拟和仿真。研究成果有助于分析箔条回波对机载多普勒雷达的影响特性,对评估箔条干扰效果有着积极意义。     

基于微动特性的单根箔条回波信号时频特性

针对箔条微动对回波信号调制的问题,提出一种单根箔条回波构建方法。首先建立单根箔条的典型微动模式的运动学方程,然后基于散射中心对该微动模式下的单根箔条回波进行仿真,最后通过时频方法对单根箔条回波信号的微动变化规律进行分析。仿真结果表明,建立的单根箔条微动模型能够有效地反映箔条回波信号的微动特性,为精确建立箔条云回波模型提供了技术支撑,并为有效识别箔条干扰、改善雷达性能提供了理论依据。     

舰船箔条质心干扰仿真研究

对单舰多功能模拟训练系统电子战分系统的舰船箔条质心干扰进行仿真研究,讨论了反舰导弹跟踪仿真模型、舰船机动仿真模型、箔条云布放和运动仿真模型、箔条云雷达截面积仿真模型、舰船雷达截面积仿真模型以及箔条质心干扰效果模型。     

利用箔条云遮挡衰减效应加强对MTI雷达的干扰

基于回波能量和回波特征是雷达工作的两个相关体。MTI雷达从回波特征方面降低了箔条干扰的有效性。本文尝试从回波能量方面加强箔条云对MTI雷达的干扰,即考察箔条云的遮挡效应对MTI雷达的干扰,推导了箔条云对电磁波的衰减计算公式,计算结果表明箔条云的遮挡效应是“压制系数倍乘器”,这一设想是可行的,特别是保护运动速率极高的弹道导弹时,这是对抗MTI雷达的最大可能办法之一。     

坐标轴箔条云的电磁波传播特性研究

散射和传播是电磁波与目标相互作用时两个最基本的物理现象。在箔条干扰中,电磁波的传播效应是衡量箔条云团对敌方雷达波衰减能量的关键问题。本文针对一种坐标轴型箔条的应用需求,建立了箔条云和目标的合成回波模型,考虑了传播特性对目标散射回波的影响,并结合Oguchi方法对坐标轴箔条云的电磁波传播特性与箔条指向、位置、数量的关系进行了分析。仿真实验表明：坐标轴箔条云的电磁波传播特性不受其指向影响;在相同质量下,坐标轴箔条云的传播衰减约为传统箔条云的2.76倍,且不会出现相移,干扰性能更佳。此外,在给定仿真条件下,对不同数量的坐标轴箔条云在时间域和距离域上的干扰效果进行了分析,对坐标轴箔条的实际应用具有重要参考价值。     

箔条云空间分布特性的建模与仿真

雷达箔条干扰技术是电子对抗的重要组成部分。箔条弹在现代海陆空联合作战中,在掩护己方飞机、舰艇及地面车辆、阵地、设施等方面发挥着重要的作用。对于箔条弹展开后,箔条云团的雷达截面积研究,是评估箔条弹干扰效果的重要因素。文中以此为研究背景,着重对箔条云的空间分布特性进行研究,分别建立了球状均匀分布和球状非均匀分布两种典型情况的箔条云空间分布模型,并通过计算机仿真,验证了模型的正确性。     

斜投影极化滤波的雷达导引头抗箔条干扰方法

反舰导弹跟踪阶段受到箔条质心干扰,当箔条云初形成,舰船目标与箔条干扰处于同一雷达分辨单元,不可分辨时,无法通过识别方法进行对抗,严重影响导弹的作战效能。本文研究了采用斜投影极化滤波技术抑制不可分辨的箔条质心干扰问题。首先建立了不可分辨情况下目标和干扰的极化雷达导引头回波信号模型,根据目标与干扰的回波幅度概率密度函数,推导得到质心干扰条件下单脉冲比幅测角体制的角度测量误差概率密度函数,并对角度测量误差统计特性进行了定量的分析;接下来在阐明斜投影基本原理的基础上,提出了基于斜投影极化滤波的抗箔条质心干扰方法;最后结合典型场景,通过计算机仿真对本文所提抗箔条质心干扰方法的有效性进行了验证,并对该抗干扰方法的性能进行了分析。      

质心干扰的数字化仿真试验

通过分析末制导雷达、箔条云的特点，构建了箔条云数学模型、末制导雷达跟踪模型、质心干扰数学模型，最后将其有机结合形成计算机仿真试验的主体。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.