工艺因素对玻璃与可伐合金浸润性的影响

测定了在不同工艺条件下ＤＭ－３０５及ＢＨ－Ｇ／Ｋ两种玻璃与可伐合金之间的浸润角大小。对浸润角受气氛和金属表面氧化膜成分的影响进行了研究。为合理选择该种玻璃与可伐合金的封接工艺提供了理论依据。关键词     

工艺因素对玻璃可与伐合金浸润性的影响

测定了在不同工艺条件下ＤＭ－３０５及ＢＨ－Ｇ／Ｋ两种玻璃可与伐合金之间的浸润角大小。对浸润角受气氛和金属表面氧化膜成分的影响进行了研究。为合理选择该种玻璃与可伐合金的封接工艺提供了理论依据。     

一种红外探测器用电子束焊接技术研究

针对当前制冷型红外探测器所使用的冷指零件材料(TC4)、冷台零件材料(可伐合金)开展真空电子束焊接技术研究。TC4合金和可伐合金在熔化焊接时,焊缝组织内会出现Fe—Ti金属间化合物,该类型的金属间化合物属于脆性材料。在焊接完成后温度降低的过程中,会因TC4和可伐合金的热膨胀系数差异导致焊缝开裂。本文通过在焊缝区域添加过渡金属,将Fe、Ti元素进行物理隔离,实现了TC4/可伐合金之间的熔化焊接。     

金相检验在石英器件冷压焊工艺试验中的应用

本文介绍了金相检验技术在金属壳石英晶体振荡器真空冷压焊工艺试验中的一些应用实例。着重讨论了冷压焊焊缝和覆铜可伐带层间结合处的显微结构特征,建立了判别覆铜可伐带层间结合质量、冷压焊缝质量的粗略标准。同时也介绍了它在覆铜可伐带坯料退火温度的确定及覆铜层晶粒尺度测量中的应用。     

废可伐镀金件电解退金法的研究

在生产晶体管、集成电路等工艺过程中,会产出一些可伐合金镀金废件。可伐合金含Ni29％,Co18％,其余为Fe。从这些废镀件上回收金,目前采用的主要方法有:硝酸浸蚀法,氰化法及碘化法等。这些方法各自存在着不同的缺点,为此,我们进行了电解法从可伐合金镀金废件上回收金的试验研究,现已取得了良好效果,并正式用于生产。一、电解退金法的生产过程 1.电解液的选择     

可伐合金的可控氧化对封接质量的影响

研究了可伐合金表面氧化膜的类型和厚度对玻璃与可伐合金封接质量的影响.结果表明,氧化膜的类型和厚度直接影响金属与玻璃的封接质量.相对于工厂氧化条件,在可控条件下氧化的可伐合金与玻璃封接后的气密性一致性和可靠性较高.随着氧化膜厚度的增加,玻璃沿引线的爬坡高度逐渐增加,当控制氧化膜厚度不超过1.5μm时,爬坡高度都小于200...     

连续点式锻压激光快速成形TA15钛合金热处理组织与性能

采用连续点式锻压激光快速成形技术制备了TA15合金厚壁件,研究了不同退火温度对连续点式锻压激光快速成形TA15合金的显微组织以及室温拉伸力学性能的影响。分析了连续点式锻压塑性变形区大小及所制备TA15合金显微组织的形成机理,解释了退火过程中TA15合金层片组织转变为等轴组织的原因。实验结果表明,随着退火温度的升高,TA15合金退火组织等轴α晶粒体积分数越高,且晶粒尺寸越大,同时退火TA15合金强度降低、塑性升高。     

C离子注入Si中Si-C合金的形成及其特征

利用离子注入和高温退火的方法在Si中生长了C含量为0.6%—1.0%的Si1-xCx合金,研究了注入过程中产生的损伤缺陷、注入C离子的剂量及退火工艺对合金形成的影响,探讨了合金的形成机理及合金产生的应变分布的起因．如果注入的C离子剂量小于引起Si非晶化的剂量,退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si1-xCx合金,而预先利用Si离子注入引进损伤有利于Si1-xCx合金的形成;但如果注入的C离子可以引起Si的非晶化,预先注入产生的损伤缺陷不利于Si1-xCx合金的形成．与慢速退火工艺相比,快速热退火工艺有利于Si1-xCx合金的形成．离子注入的C原子在空间分布不均匀,退火过程中将形成应变不同的Si1-x-Cx合金区域．     

可伐合金气密封接的预氧化

可伐合金和硅硼硬玻璃是通过可伐合金表面的氧化物与玻璃互溶而紧密结合在一起的,所以可伐合金的预氧化是金属外壳制造的一个非常重要的工艺环节,是直接影响气密封接的一个重要因素。为实现气密封接,可伐合金预氧化需要得到的氧化物应是Fe_3O_4和FeO,而不希望得到Fe_2O_3。同时,氧化膜的厚度要控制在一定的范围内;氧化膜过薄则氧化物完全溶于玻璃,造成玻璃与金属基体表面的直接封接,使封接强度下降;氧化膜过厚则造成金属表面氧化物较粗糙疏松,封接件容易漏气。为达到上述两个目的,可以从可伐合金氧化的热力学和动力学出发,通过控制氧化气氛,氧化温度和时间来实现。     

可伐合金外壳激光封焊的裂纹原因分析

可伐(Kovar)合金作为一种功能材料,在较宽的温度范围内(-80℃～450℃)内膨胀系数与硬玻璃的膨胀系数相近,可以保证材料的匹配封接。主要分析了可伐合金外壳采用激光封焊时焊缝处产生裂纹的原因,并就改善焊接裂纹提出了改进措施,主要措施包括焊接工艺参数的优化、焊接结构的优化设计、焊接前的清洗及热处理。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.